Silva, M J; Quivy, Alain Andre; González-Borrero, Pedro Pablo; Marega Junior, Euclydes 
Fonte: Journal of Crystal Growth. Unidades: IF, IFSC
Assunto: SEMICONDUTORES (FÍSICO-QUÍMICA)
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SILVA, M J et al. Maximization of the InAs quantum-dot density through the growth of an intentionally non-homogeneous sample. Journal of Crystal Growth, v. 236, n. 1-3, p. 41-45, 2002Tradução . . Disponível em: https://doi.org/10.1016/s0022-0248(01)02109-1. Acesso em: 06 nov. 2024.APA
Silva, M. J., Quivy, A. A., González-Borrero, P. P., & Marega Junior, E. (2002). Maximization of the InAs quantum-dot density through the growth of an intentionally non-homogeneous sample. Journal of Crystal Growth, 236( 1-3), 41-45. doi:10.1016/s0022-0248(01)02109-1NLM
Silva MJ, Quivy AA, González-Borrero PP, Marega Junior E. Maximization of the InAs quantum-dot density through the growth of an intentionally non-homogeneous sample [Internet]. Journal of Crystal Growth. 2002 ;236( 1-3): 41-45.[citado 2024 nov. 06 ] Available from: https://doi.org/10.1016/s0022-0248(01)02109-1Vancouver
Silva MJ, Quivy AA, González-Borrero PP, Marega Junior E. Maximization of the InAs quantum-dot density through the growth of an intentionally non-homogeneous sample [Internet]. Journal of Crystal Growth. 2002 ;236( 1-3): 41-45.[citado 2024 nov. 06 ] Available from: https://doi.org/10.1016/s0022-0248(01)02109-1
