Structural and electronic properties of 3d transition metal impurities in silicon carbide (2004)
Source: Physical Review B. Unidades: IF, EP
Subjects: MATÉRIA CONDENSADA, ESTRUTURA ELETRÔNICA, PROPRIEDADES DOS MATERIAIS
ABNT
ASSALI, L. V. C. et al. Structural and electronic properties of 3d transition metal impurities in silicon carbide. Physical Review B, 2004Tradução . . Disponível em: https://doi.org/10.1103/physrevb.69.155212. Acesso em: 20 out. 2024.APA
Assali, L. V. C., Machado, W. V. M., Justo Filho, J. F., & Godoi, A. L. de. (2004). Structural and electronic properties of 3d transition metal impurities in silicon carbide. Physical Review B. doi:10.1103/physrevb.69.155212NLM
Assali LVC, Machado WVM, Justo Filho JF, Godoi AL de. Structural and electronic properties of 3d transition metal impurities in silicon carbide [Internet]. Physical Review B. 2004 ;[citado 2024 out. 20 ] Available from: https://doi.org/10.1103/physrevb.69.155212Vancouver
Assali LVC, Machado WVM, Justo Filho JF, Godoi AL de. Structural and electronic properties of 3d transition metal impurities in silicon carbide [Internet]. Physical Review B. 2004 ;[citado 2024 out. 20 ] Available from: https://doi.org/10.1103/physrevb.69.155212