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Artigo de periodico
Plasma deposition of amorphous carbon films from 'CH IND.4' atmospheres highly diluted in Ar (2002)
Jacobsohn, L G; Capote, G; Cruz, N C; Zanatta, Antonio Ricardo; Freire Junior, F L
Source: Thin Solid Films. Unidade: IFSC
Subjects: FÍSICA DA MATÉRIA CONDENSADA, FILMES FINOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
JACOBSOHN, L G et al. Plasma deposition of amorphous carbon films from 'CH IND.4' atmospheres highly diluted in Ar. Thin Solid Films, v. No 2002, n. 1-2, p. 46-53, 2002Tradução . . Disponível em: https://doi.org/10.1016/s0040-6090(02)00756-3. Acesso em: 22 ago. 2024.
APA
Jacobsohn, L. G., Capote, G., Cruz, N. C., Zanatta, A. R., & Freire Junior, F. L. (2002). Plasma deposition of amorphous carbon films from 'CH IND.4' atmospheres highly diluted in Ar. Thin Solid Films, No 2002( 1-2), 46-53. doi:10.1016/s0040-6090(02)00756-3
NLM
Jacobsohn LG, Capote G, Cruz NC, Zanatta AR, Freire Junior FL. Plasma deposition of amorphous carbon films from 'CH IND.4' atmospheres highly diluted in Ar [Internet]. Thin Solid Films. 2002 ; No 2002( 1-2): 46-53.[citado 2024 ago. 22 ] Available from: https://doi.org/10.1016/s0040-6090(02)00756-3
Vancouver
Jacobsohn LG, Capote G, Cruz NC, Zanatta AR, Freire Junior FL. Plasma deposition of amorphous carbon films from 'CH IND.4' atmospheres highly diluted in Ar [Internet]. Thin Solid Films. 2002 ; No 2002( 1-2): 46-53.[citado 2024 ago. 22 ] Available from: https://doi.org/10.1016/s0040-6090(02)00756-3
Artigo de periodico
Optoelectronic and structural properties of Er-doped sputter-deposited gallium-arsenic-nitrogen films (2001)
Zanatta, Antonio Ricardo; Ribeiro, C. T. M.; Freire Junior, F L
Source: Journal of Applied Physics. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ZANATTA, Antonio Ricardo e RIBEIRO, C. T. M. e FREIRE JUNIOR, F L. Optoelectronic and structural properties of Er-doped sputter-deposited gallium-arsenic-nitrogen films. Journal of Applied Physics, v. 90, n. 5, p. 2321-2328, 2001Tradução . . Disponível em: https://doi.org/10.1063/1.1388568. Acesso em: 22 ago. 2024.
APA
Zanatta, A. R., Ribeiro, C. T. M., & Freire Junior, F. L. (2001). Optoelectronic and structural properties of Er-doped sputter-deposited gallium-arsenic-nitrogen films. Journal of Applied Physics, 90( 5), 2321-2328. doi:10.1063/1.1388568
NLM
Zanatta AR, Ribeiro CTM, Freire Junior FL. Optoelectronic and structural properties of Er-doped sputter-deposited gallium-arsenic-nitrogen films [Internet]. Journal of Applied Physics. 2001 ;90( 5): 2321-2328.[citado 2024 ago. 22 ] Available from: https://doi.org/10.1063/1.1388568
Vancouver
Zanatta AR, Ribeiro CTM, Freire Junior FL. Optoelectronic and structural properties of Er-doped sputter-deposited gallium-arsenic-nitrogen films [Internet]. Journal of Applied Physics. 2001 ;90( 5): 2321-2328.[citado 2024 ago. 22 ] Available from: https://doi.org/10.1063/1.1388568
Artigo de periodico
Optical study of thermally annealed Er-doped hydrogenated a-Si films (2000)
Zanatta, Antonio Ricardo; Freire Junior, F L
Source: Physical Review B. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ZANATTA, Antonio Ricardo e FREIRE JUNIOR, F L. Optical study of thermally annealed Er-doped hydrogenated a-Si films. Physical Review B, v. 62, n. 3, p. 2016-2020, 2000Tradução . . Disponível em: https://doi.org/10.1103/physrevb.62.2016. Acesso em: 22 ago. 2024.
APA
Zanatta, A. R., & Freire Junior, F. L. (2000). Optical study of thermally annealed Er-doped hydrogenated a-Si films. Physical Review B, 62( 3), 2016-2020. doi:10.1103/physrevb.62.2016
NLM
Zanatta AR, Freire Junior FL. Optical study of thermally annealed Er-doped hydrogenated a-Si films [Internet]. Physical Review B. 2000 ; 62( 3): 2016-2020.[citado 2024 ago. 22 ] Available from: https://doi.org/10.1103/physrevb.62.2016
Vancouver
Zanatta AR, Freire Junior FL. Optical study of thermally annealed Er-doped hydrogenated a-Si films [Internet]. Physical Review B. 2000 ; 62( 3): 2016-2020.[citado 2024 ago. 22 ] Available from: https://doi.org/10.1103/physrevb.62.2016

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