Source: SBMICRO 2008: Anais. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
ABNT
FRAGA, Mariana Amorim et al. Etching characteristics and surface morphology of nitrogen-doped a-SiC films prepared by RF magnetron sputtering. 2008, Anais.. Pennington: The Electrochemical Society, 2008. Disponível em: https://doi.org/10.1149/1.2956052. Acesso em: 01 nov. 2024.APA
Fraga, M. A., Pessoa, R. S., Oliveira, I. C., Massi, M., Maciel, H. S., Martinho, H. S., et al. (2008). Etching characteristics and surface morphology of nitrogen-doped a-SiC films prepared by RF magnetron sputtering. In SBMICRO 2008: Anais. Pennington: The Electrochemical Society. doi:10.1149/1.2956052NLM
Fraga MA, Pessoa RS, Oliveira IC, Massi M, Maciel HS, Martinho HS, Santos Filho SG dos, Marcuzzo JS. Etching characteristics and surface morphology of nitrogen-doped a-SiC films prepared by RF magnetron sputtering [Internet]. SBMICRO 2008: Anais. 2008 ;[citado 2024 nov. 01 ] Available from: https://doi.org/10.1149/1.2956052Vancouver
Fraga MA, Pessoa RS, Oliveira IC, Massi M, Maciel HS, Martinho HS, Santos Filho SG dos, Marcuzzo JS. Etching characteristics and surface morphology of nitrogen-doped a-SiC films prepared by RF magnetron sputtering [Internet]. SBMICRO 2008: Anais. 2008 ;[citado 2024 nov. 01 ] Available from: https://doi.org/10.1149/1.2956052