Source: EPL : a letters journal exploring the frontiers of physics. Unidade: IF
Assunto: SEMICONDUTORES
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ABNT
RIBEIRO JR, M e FERREIRA, L G e FONSECA, L R C. First-principles calculation of the 'AL''AS'/'GA''AS' interface band structure using a self-energy–corrected local density approximation. EPL : a letters journal exploring the frontiers of physics, v. 94, n. 2, p. 27001, 2011Tradução . . Disponível em: https://doi.org/10.1209/0295-5075/94/27001. Acesso em: 02 nov. 2025.APA
Ribeiro Jr, M., Ferreira, L. G., & Fonseca, L. R. C. (2011). First-principles calculation of the 'AL''AS'/'GA''AS' interface band structure using a self-energy–corrected local density approximation. EPL : a letters journal exploring the frontiers of physics, 94( 2), 27001. doi:10.1209/0295-5075/94/27001NLM
Ribeiro Jr M, Ferreira LG, Fonseca LRC. First-principles calculation of the 'AL''AS'/'GA''AS' interface band structure using a self-energy–corrected local density approximation [Internet]. EPL : a letters journal exploring the frontiers of physics. 2011 ;94( 2): 27001.[citado 2025 nov. 02 ] Available from: https://doi.org/10.1209/0295-5075/94/27001Vancouver
Ribeiro Jr M, Ferreira LG, Fonseca LRC. First-principles calculation of the 'AL''AS'/'GA''AS' interface band structure using a self-energy–corrected local density approximation [Internet]. EPL : a letters journal exploring the frontiers of physics. 2011 ;94( 2): 27001.[citado 2025 nov. 02 ] Available from: https://doi.org/10.1209/0295-5075/94/27001
