Gallium arsenide integrated circuits development at telebras (1995)
Source: Proceedings. Conference titles: Congress of the Brazilian Microelectronics Society. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
ABNT
FINARDI, Celio Antonio et al. Gallium arsenide integrated circuits development at telebras. 1995, Anais.. Porto Alegre: Instituto de Informatica da Ufrgs, 1995. . Acesso em: 10 out. 2024.APA
Finardi, C. A., Fischer, R. A., Corso, V., Patiri Neto, V., Verri, A. S., Viveiros Júnior, D., et al. (1995). Gallium arsenide integrated circuits development at telebras. In Proceedings. Porto Alegre: Instituto de Informatica da Ufrgs.NLM
Finardi CA, Fischer RA, Corso V, Patiri Neto V, Verri AS, Viveiros Júnior D, Consonni D, Correra FS, Hong KL, Luqueze MA, Abrao T. Gallium arsenide integrated circuits development at telebras. Proceedings. 1995 ;[citado 2024 out. 10 ]Vancouver
Finardi CA, Fischer RA, Corso V, Patiri Neto V, Verri AS, Viveiros Júnior D, Consonni D, Correra FS, Hong KL, Luqueze MA, Abrao T. Gallium arsenide integrated circuits development at telebras. Proceedings. 1995 ;[citado 2024 out. 10 ]