ReP USP - Resultado da busca

Artigo de periodico
Miniband structures and effective masses of n-type 'delta'-doping superlattices in 'GaN' (1998)
Rodrigues, S C P; Rosa, A L; Scolfaro, Luísa Maria Ribeiro; Beliaev, Dmitri; Leite, J. R.; Enderlein, R; Alves, J L A
Source: Semiconductor Science and Technology. Unidade: IF
Assunto: ENGENHARIA MECÂNICA
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ABNT
RODRIGUES, S C P et al. Miniband structures and effective masses of n-type 'delta'-doping superlattices in 'GaN'. Semiconductor Science and Technology, v. 13, p. 981-988, 1998Tradução . . Acesso em: 02 nov. 2025.
APA
Rodrigues, S. C. P., Rosa, A. L., Scolfaro, L. M. R., Beliaev, D., Leite, J. R., Enderlein, R., & Alves, J. L. A. (1998). Miniband structures and effective masses of n-type 'delta'-doping superlattices in 'GaN'. Semiconductor Science and Technology, 13, 981-988.
NLM
Rodrigues SCP, Rosa AL, Scolfaro LMR, Beliaev D, Leite JR, Enderlein R, Alves JLA. Miniband structures and effective masses of n-type 'delta'-doping superlattices in 'GaN'. Semiconductor Science and Technology. 1998 ; 13 981-988.[citado 2025 nov. 02 ]
Vancouver
Rodrigues SCP, Rosa AL, Scolfaro LMR, Beliaev D, Leite JR, Enderlein R, Alves JLA. Miniband structures and effective masses of n-type 'delta'-doping superlattices in 'GaN'. Semiconductor Science and Technology. 1998 ; 13 981-988.[citado 2025 nov. 02 ]
Artigo de periodico
Photoreflectance spectra from GaAs HEMT structures reinvestigated: solution of an old controversy (1998)
Soares, J A N T; Enderlein, R; Beliaev, D; Leite, J. R.; Saito, M
Source: Semiconductor Science and Technology. Unidade: IF
Subjects: ENGENHARIA MECÂNICA, MATÉRIA CONDENSADA, MATÉRIA CONDENSADA
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ABNT
SOARES, J A N T et al. Photoreflectance spectra from GaAs HEMT structures reinvestigated: solution of an old controversy. Semiconductor Science and Technology, v. 13, n. 12, p. 1418-1425, 1998Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/13/12/015. Acesso em: 02 nov. 2025.
APA
Soares, J. A. N. T., Enderlein, R., Beliaev, D., Leite, J. R., & Saito, M. (1998). Photoreflectance spectra from GaAs HEMT structures reinvestigated: solution of an old controversy. Semiconductor Science and Technology, 13( 12), 1418-1425. doi:10.1088/0268-1242/13/12/015
NLM
Soares JANT, Enderlein R, Beliaev D, Leite JR, Saito M. Photoreflectance spectra from GaAs HEMT structures reinvestigated: solution of an old controversy [Internet]. Semiconductor Science and Technology. 1998 ; 13( 12): 1418-1425.[citado 2025 nov. 02 ] Available from: https://doi.org/10.1088/0268-1242/13/12/015
Vancouver
Soares JANT, Enderlein R, Beliaev D, Leite JR, Saito M. Photoreflectance spectra from GaAs HEMT structures reinvestigated: solution of an old controversy [Internet]. Semiconductor Science and Technology. 1998 ; 13( 12): 1418-1425.[citado 2025 nov. 02 ] Available from: https://doi.org/10.1088/0268-1242/13/12/015
Trabalho de evento-anais periodico
Optical characterization of GaAs/AlAs multiple quantum wells interfaces (1998)
Lemos, V; Sérgio, C. S.; Pimenta Lima, A; Quivy, A. A.; Enderlein, R; Leite, J. R.; Carvalho Junior, W
Source: Radiation Effects & Defects in Solids. Conference titles: Symposium on Defect Dependent Processes in Insulators and Seminconductors. Unidade: IF
Subjects: FÍSICA, FÍSICA NUCLEAR
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ABNT
LEMOS, V et al. Optical characterization of GaAs/AlAs multiple quantum wells interfaces. Radiation Effects & Defects in Solids. London: Gordon & Breach. . Acesso em: 02 nov. 2025. , 1998
APA
Lemos, V., Sérgio, C. S., Pimenta Lima, A., Quivy, A. A., Enderlein, R., Leite, J. R., & Carvalho Junior, W. (1998). Optical characterization of GaAs/AlAs multiple quantum wells interfaces. Radiation Effects & Defects in Solids. London: Gordon & Breach.
NLM
Lemos V, Sérgio CS, Pimenta Lima A, Quivy AA, Enderlein R, Leite JR, Carvalho Junior W. Optical characterization of GaAs/AlAs multiple quantum wells interfaces. Radiation Effects & Defects in Solids. 1998 ; 146 187-197.[citado 2025 nov. 02 ]
Vancouver
Lemos V, Sérgio CS, Pimenta Lima A, Quivy AA, Enderlein R, Leite JR, Carvalho Junior W. Optical characterization of GaAs/AlAs multiple quantum wells interfaces. Radiation Effects & Defects in Solids. 1998 ; 146 187-197.[citado 2025 nov. 02 ]
Trabalho de evento-anais periodico
Micro-Raman and electron microscopy analysis of cubic GaN layers on (001) GaAs (1998)
Tabata, A; Enderlein, R; Lima, A. P.; Leite, J. R.; Lemos, V; Kaiser, S; Schikora, D; Schoettker, B; Koehler, U; Lischka, K
Source: Materials Science Forum. Conference titles: Silicon Carbide III-Nitrides and Related Materials International Conference. Unidade: IF
Assunto: SEMICONDUTORES
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ABNT
TABATA, A et al. Micro-Raman and electron microscopy analysis of cubic GaN layers on (001) GaAs. Materials Science Forum. Zuerich: Trans Tech Publications. . Acesso em: 02 nov. 2025. , 1998
APA
Tabata, A., Enderlein, R., Lima, A. P., Leite, J. R., Lemos, V., Kaiser, S., et al. (1998). Micro-Raman and electron microscopy analysis of cubic GaN layers on (001) GaAs. Materials Science Forum. Zuerich: Trans Tech Publications.
NLM
Tabata A, Enderlein R, Lima AP, Leite JR, Lemos V, Kaiser S, Schikora D, Schoettker B, Koehler U, Lischka K. Micro-Raman and electron microscopy analysis of cubic GaN layers on (001) GaAs. Materials Science Forum. 1998 ; 264-268 1367-1370.[citado 2025 nov. 02 ]
Vancouver
Tabata A, Enderlein R, Lima AP, Leite JR, Lemos V, Kaiser S, Schikora D, Schoettker B, Koehler U, Lischka K. Micro-Raman and electron microscopy analysis of cubic GaN layers on (001) GaAs. Materials Science Forum. 1998 ; 264-268 1367-1370.[citado 2025 nov. 02 ]
Artigo de periodico
Density Functional theory for Holes in Semiconductors (1997)
Enderlein, R; Sipahi, Guilherme Matos ; Scolfaro, Luísa Maria Ribeiro; Leite, J. R.
Source: Physical Review Letters. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
ENDERLEIN, R et al. Density Functional theory for Holes in Semiconductors. Physical Review Letters, v. 79, n. 19, p. 3712-3715, 1997Tradução . . Disponível em: https://doi.org/10.1103/physrevlett.79.3712. Acesso em: 02 nov. 2025.
APA
Enderlein, R., Sipahi, G. M., Scolfaro, L. M. R., & Leite, J. R. (1997). Density Functional theory for Holes in Semiconductors. Physical Review Letters, 79( 19), 3712-3715. doi:10.1103/physrevlett.79.3712
NLM
Enderlein R, Sipahi GM, Scolfaro LMR, Leite JR. Density Functional theory for Holes in Semiconductors [Internet]. Physical Review Letters. 1997 ; 79( 19): 3712-3715.[citado 2025 nov. 02 ] Available from: https://doi.org/10.1103/physrevlett.79.3712
Vancouver
Enderlein R, Sipahi GM, Scolfaro LMR, Leite JR. Density Functional theory for Holes in Semiconductors [Internet]. Physical Review Letters. 1997 ; 79( 19): 3712-3715.[citado 2025 nov. 02 ] Available from: https://doi.org/10.1103/physrevlett.79.3712
Artigo de periodico
Minibands of p-type 'delta'-doping superlattices in GaAs (1997)
Ramos, L. E.; Sipahi, Guilherme Matos ; Scolfaro, Luísa Maria Ribeiro; Enderlein, R; Leite, J. R.
Source: Superlattices and Microstructure. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
RAMOS, L. E. et al. Minibands of p-type 'delta'-doping superlattices in GaAs. Superlattices and Microstructure, v. 22, n. 4, p. 443-451, 1997Tradução . . Acesso em: 02 nov. 2025.
APA
Ramos, L. E., Sipahi, G. M., Scolfaro, L. M. R., Enderlein, R., & Leite, J. R. (1997). Minibands of p-type 'delta'-doping superlattices in GaAs. Superlattices and Microstructure, 22( 4), 443-451.
NLM
Ramos LE, Sipahi GM, Scolfaro LMR, Enderlein R, Leite JR. Minibands of p-type 'delta'-doping superlattices in GaAs. Superlattices and Microstructure. 1997 ; 22( 4): 443-451.[citado 2025 nov. 02 ]
Vancouver
Ramos LE, Sipahi GM, Scolfaro LMR, Enderlein R, Leite JR. Minibands of p-type 'delta'-doping superlattices in GaAs. Superlattices and Microstructure. 1997 ; 22( 4): 443-451.[citado 2025 nov. 02 ]
Artigo de periodico
Enhanced photoluminescence from porous formed by nonstandard preparation (1997)
Belogorokhov, A I; Enderlein, R; Tabata, A; Leite, J. R.; Karavanskii, V A; Belogorokhova, L I
Source: Physical Review B. Unidade: IF
Assunto: FÍSICA DO ESTADO SÓLIDO
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ABNT
BELOGOROKHOV, A I et al. Enhanced photoluminescence from porous formed by nonstandard preparation. Physical Review B, v. 56, n. 16, p. 10276-10282, 1997Tradução . . Acesso em: 02 nov. 2025.
APA
Belogorokhov, A. I., Enderlein, R., Tabata, A., Leite, J. R., Karavanskii, V. A., & Belogorokhova, L. I. (1997). Enhanced photoluminescence from porous formed by nonstandard preparation. Physical Review B, 56( 16), 10276-10282.
NLM
Belogorokhov AI, Enderlein R, Tabata A, Leite JR, Karavanskii VA, Belogorokhova LI. Enhanced photoluminescence from porous formed by nonstandard preparation. Physical Review B. 1997 ; 56( 16): 10276-10282.[citado 2025 nov. 02 ]
Vancouver
Belogorokhov AI, Enderlein R, Tabata A, Leite JR, Karavanskii VA, Belogorokhova LI. Enhanced photoluminescence from porous formed by nonstandard preparation. Physical Review B. 1997 ; 56( 16): 10276-10282.[citado 2025 nov. 02 ]
Artigo de periodico
Photoreflectance measurements in GaAs/AlGaAs asymmetric quantum wells (1997)
Soler, M A G; Depeyrot, J; Morais, P C; Soares, J A N T; Scólfaro, Luisa Maria Ribeiro; Silva, Euzi Conceição Fernandes da; Enderlein, R; Weimann, G; Trankle, G
Source: Superlattices and Microstructures. Unidade: IF
Assunto: MECÂNICA QUÂNTICA
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ABNT
SOLER, M A G et al. Photoreflectance measurements in GaAs/AlGaAs asymmetric quantum wells. Superlattices and Microstructures, v. 21, n. 4, p. 581-585, 1997Tradução . . Disponível em: https://doi.org/10.1006/spmi.1996.0206. Acesso em: 02 nov. 2025.
APA
Soler, M. A. G., Depeyrot, J., Morais, P. C., Soares, J. A. N. T., Scólfaro, L. M. R., Silva, E. C. F. da, et al. (1997). Photoreflectance measurements in GaAs/AlGaAs asymmetric quantum wells. Superlattices and Microstructures, 21( 4), 581-585. doi:10.1006/spmi.1996.0206
NLM
Soler MAG, Depeyrot J, Morais PC, Soares JANT, Scólfaro LMR, Silva ECF da, Enderlein R, Weimann G, Trankle G. Photoreflectance measurements in GaAs/AlGaAs asymmetric quantum wells [Internet]. Superlattices and Microstructures. 1997 ; 21( 4): 581-585.[citado 2025 nov. 02 ] Available from: https://doi.org/10.1006/spmi.1996.0206
Vancouver
Soler MAG, Depeyrot J, Morais PC, Soares JANT, Scólfaro LMR, Silva ECF da, Enderlein R, Weimann G, Trankle G. Photoreflectance measurements in GaAs/AlGaAs asymmetric quantum wells [Internet]. Superlattices and Microstructures. 1997 ; 21( 4): 581-585.[citado 2025 nov. 02 ] Available from: https://doi.org/10.1006/spmi.1996.0206
Trabalho de evento-resumo
Photoreflectance spectra from 'GA''AL''AS' / 'GA''AS' hemts (1996)
Soares, J A N T; Enderlein, R; Leite, J. R.; Saito, M
Source: Resumos. Conference titles: Encontro Nacional de Fisica da Materia Condensada. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
SOARES, J A N T et al. Photoreflectance spectra from 'GA''AL''AS' / 'GA''AS' hemts. 1996, Anais.. São Paulo: Sociedade Brasileira de Fisica, 1996. . Acesso em: 02 nov. 2025.
APA
Soares, J. A. N. T., Enderlein, R., Leite, J. R., & Saito, M. (1996). Photoreflectance spectra from 'GA''AL''AS' / 'GA''AS' hemts. In Resumos. São Paulo: Sociedade Brasileira de Fisica.
NLM
Soares JANT, Enderlein R, Leite JR, Saito M. Photoreflectance spectra from 'GA''AL''AS' / 'GA''AS' hemts. Resumos. 1996 ;[citado 2025 nov. 02 ]
Vancouver
Soares JANT, Enderlein R, Leite JR, Saito M. Photoreflectance spectra from 'GA''AL''AS' / 'GA''AS' hemts. Resumos. 1996 ;[citado 2025 nov. 02 ]
Trabalho de evento-resumo
Photoluminescence study of radiative recombination on 'GA''AS' / gaaias 'DELTA'-doping quantum wells (1996)
Dantas, N O; Tabata, A; Martini, S.; Ceschim, A M; Scalfaro, L M R; Enderlein, R; Leite, J. R.
Source: Resumos. Conference titles: Encontro Nacional de Fisica da Materia Condensada. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
DANTAS, N O et al. Photoluminescence study of radiative recombination on 'GA''AS' / gaaias 'DELTA'-doping quantum wells. 1996, Anais.. São Paulo: Sociedade Brasileira de Fisica, 1996. . Acesso em: 02 nov. 2025.
APA
Dantas, N. O., Tabata, A., Martini, S., Ceschim, A. M., Scalfaro, L. M. R., Enderlein, R., & Leite, J. R. (1996). Photoluminescence study of radiative recombination on 'GA''AS' / gaaias 'DELTA'-doping quantum wells. In Resumos. São Paulo: Sociedade Brasileira de Fisica.
NLM
Dantas NO, Tabata A, Martini S, Ceschim AM, Scalfaro LMR, Enderlein R, Leite JR. Photoluminescence study of radiative recombination on 'GA''AS' / gaaias 'DELTA'-doping quantum wells. Resumos. 1996 ;[citado 2025 nov. 02 ]
Vancouver
Dantas NO, Tabata A, Martini S, Ceschim AM, Scalfaro LMR, Enderlein R, Leite JR. Photoluminescence study of radiative recombination on 'GA''AS' / gaaias 'DELTA'-doping quantum wells. Resumos. 1996 ;[citado 2025 nov. 02 ]
Artigo de periodico
Comparative raman studies of cubic and hexagonal gan epitaxial layers (1996)
Tabata, A; Enderlein, R; Leite, J. R.; Silva, S W; Galzerani, J C; Schikora, D; Kloidt, M; Lischka, K
Source: Journal of Applied Physics. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
TABATA, A et al. Comparative raman studies of cubic and hexagonal gan epitaxial layers. Journal of Applied Physics, v. 79, n. 8 , p. 4137-9, 1996Tradução . . Disponível em: https://doi.org/10.1063/1.361778. Acesso em: 02 nov. 2025.
APA
Tabata, A., Enderlein, R., Leite, J. R., Silva, S. W., Galzerani, J. C., Schikora, D., et al. (1996). Comparative raman studies of cubic and hexagonal gan epitaxial layers. Journal of Applied Physics, 79( 8 ), 4137-9. doi:10.1063/1.361778
NLM
Tabata A, Enderlein R, Leite JR, Silva SW, Galzerani JC, Schikora D, Kloidt M, Lischka K. Comparative raman studies of cubic and hexagonal gan epitaxial layers [Internet]. Journal of Applied Physics. 1996 ;79( 8 ): 4137-9.[citado 2025 nov. 02 ] Available from: https://doi.org/10.1063/1.361778
Vancouver
Tabata A, Enderlein R, Leite JR, Silva SW, Galzerani JC, Schikora D, Kloidt M, Lischka K. Comparative raman studies of cubic and hexagonal gan epitaxial layers [Internet]. Journal of Applied Physics. 1996 ;79( 8 ): 4137-9.[citado 2025 nov. 02 ] Available from: https://doi.org/10.1063/1.361778
Trabalho de evento-resumo periodico
Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'GAMA'-doped quantum wells (1995)
Tabata, A; Ceschin, A M; Quivy, A. A.; Levine, Alexandre ; Leite, J. R.; Enderlein, R; Oliveira, J. B. B.; Laureto, E; Goncalves, J L
Source: Materials Science and Engineering B. Conference titles: International Conference on Low Dimensional Structures and Devices. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
TABATA, A et al. Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'GAMA'-doped quantum wells. Materials Science and Engineering B. Cingapura: Instituto de Física, Universidade de São Paulo. . Acesso em: 02 nov. 2025. , 1995
APA
Tabata, A., Ceschin, A. M., Quivy, A. A., Levine, A., Leite, J. R., Enderlein, R., et al. (1995). Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'GAMA'-doped quantum wells. Materials Science and Engineering B. Cingapura: Instituto de Física, Universidade de São Paulo.
NLM
Tabata A, Ceschin AM, Quivy AA, Levine A, Leite JR, Enderlein R, Oliveira JBB, Laureto E, Goncalves JL. Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'GAMA'-doped quantum wells. Materials Science and Engineering B. 1995 ;35 401-5.[citado 2025 nov. 02 ]
Vancouver
Tabata A, Ceschin AM, Quivy AA, Levine A, Leite JR, Enderlein R, Oliveira JBB, Laureto E, Goncalves JL. Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'GAMA'-doped quantum wells. Materials Science and Engineering B. 1995 ;35 401-5.[citado 2025 nov. 02 ]
Artigo de periodico
Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'DELTA'- doped quantum wells (1995)
Tabata, A; Ceschin, A M; Quivy, A. A.; Levine, Alexandre ; Leite, J. R.; Enderlein, R; Oliveira, J. B. B.; Laureto, E; Goncalves, J L
Source: Materials Science & Engineering B. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
TABATA, A et al. Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'DELTA'- doped quantum wells. Materials Science & Engineering B, v. 35, p. 401-5, 1995Tradução . . Disponível em: https://repositorio.usp.br/directbitstream/0b6feb87-87b0-4377-a5f5-f1c3d5458807/1-s2.0-0921510795013296-main.pdf. Acesso em: 02 nov. 2025.
APA
Tabata, A., Ceschin, A. M., Quivy, A. A., Levine, A., Leite, J. R., Enderlein, R., et al. (1995). Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'DELTA'- doped quantum wells. Materials Science & Engineering B, 35, 401-5. Recuperado de https://repositorio.usp.br/directbitstream/0b6feb87-87b0-4377-a5f5-f1c3d5458807/1-s2.0-0921510795013296-main.pdf
NLM
Tabata A, Ceschin AM, Quivy AA, Levine A, Leite JR, Enderlein R, Oliveira JBB, Laureto E, Goncalves JL. Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'DELTA'- doped quantum wells [Internet]. Materials Science & Engineering B. 1995 ;35 401-5.[citado 2025 nov. 02 ] Available from: https://repositorio.usp.br/directbitstream/0b6feb87-87b0-4377-a5f5-f1c3d5458807/1-s2.0-0921510795013296-main.pdf
Vancouver
Tabata A, Ceschin AM, Quivy AA, Levine A, Leite JR, Enderlein R, Oliveira JBB, Laureto E, Goncalves JL. Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'DELTA'- doped quantum wells [Internet]. Materials Science & Engineering B. 1995 ;35 401-5.[citado 2025 nov. 02 ] Available from: https://repositorio.usp.br/directbitstream/0b6feb87-87b0-4377-a5f5-f1c3d5458807/1-s2.0-0921510795013296-main.pdf
Trabalho de evento-resumo
Photoreflectance investigations of semiconductor device structures (1995)
Soares, J A N T; Enderlein, R; Leite, J. R.; Saito, M
Source: Resumos. Conference titles: Encontro Nacional de Fisica da Materia Condensada. Unidade: IF
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SOARES, J A N T et al. Photoreflectance investigations of semiconductor device structures. 1995, Anais.. São Paulo: Sociedade Brasileira de Fisica, 1995. . Acesso em: 02 nov. 2025.
APA
Soares, J. A. N. T., Enderlein, R., Leite, J. R., & Saito, M. (1995). Photoreflectance investigations of semiconductor device structures. In Resumos. São Paulo: Sociedade Brasileira de Fisica.
NLM
Soares JANT, Enderlein R, Leite JR, Saito M. Photoreflectance investigations of semiconductor device structures. Resumos. 1995 ;[citado 2025 nov. 02 ]
Vancouver
Soares JANT, Enderlein R, Leite JR, Saito M. Photoreflectance investigations of semiconductor device structures. Resumos. 1995 ;[citado 2025 nov. 02 ]

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