Broad-band photoresponse from InAs quantum dots embedded into InGaAs graded well (2005)
Source: IEEE Electron Device Letters. Unidade: IFSC
Subjects: SEMICONDUTORES, INFRAVERMELHO (MEDIÇÃO)
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LIANG, Jie et al. Broad-band photoresponse from InAs quantum dots embedded into InGaAs graded well. IEEE Electron Device Letters, v. 26, n. 9, p. Se 2005, 2005Tradução . . Disponível em: https://doi.org/10.1109/led.2005.854392. Acesso em: 16 out. 2024.APA
Liang, J., Chua, Y. C., Manasreh, M. O., Marega Junior, E., & Salamo, G. J. (2005). Broad-band photoresponse from InAs quantum dots embedded into InGaAs graded well. IEEE Electron Device Letters, 26( 9), Se 2005. doi:10.1109/led.2005.854392NLM
Liang J, Chua YC, Manasreh MO, Marega Junior E, Salamo GJ. Broad-band photoresponse from InAs quantum dots embedded into InGaAs graded well [Internet]. IEEE Electron Device Letters. 2005 ; 26( 9): Se 2005.[citado 2024 out. 16 ] Available from: https://doi.org/10.1109/led.2005.854392Vancouver
Liang J, Chua YC, Manasreh MO, Marega Junior E, Salamo GJ. Broad-band photoresponse from InAs quantum dots embedded into InGaAs graded well [Internet]. IEEE Electron Device Letters. 2005 ; 26( 9): Se 2005.[citado 2024 out. 16 ] Available from: https://doi.org/10.1109/led.2005.854392