Mechanism of dopant segregation to Si'O IND.2'/Si(001) interfaces (2000)
Source: Journal of Vacuum Science & Technology B. Unidade: IF
Assunto: FÍSICA
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ABNT
DABROWSKI, J. et al. Mechanism of dopant segregation to Si'O IND.2'/Si(001) interfaces. Journal of Vacuum Science & Technology B, v. 18, n. 4, p. 2160-2164, 2000Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JVTBD9000018000004002160000001&idtype=cvips. Acesso em: 08 out. 2024.APA
Dabrowski, J., Casali, R. A., Mussig, H. J., Baierle, R. J., & Caldas, M. J. (2000). Mechanism of dopant segregation to Si'O IND.2'/Si(001) interfaces. Journal of Vacuum Science & Technology B, 18( 4), 2160-2164. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JVTBD9000018000004002160000001&idtype=cvipsNLM
Dabrowski J, Casali RA, Mussig HJ, Baierle RJ, Caldas MJ. Mechanism of dopant segregation to Si'O IND.2'/Si(001) interfaces [Internet]. Journal of Vacuum Science & Technology B. 2000 ; 18( 4): 2160-2164.[citado 2024 out. 08 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JVTBD9000018000004002160000001&idtype=cvipsVancouver
Dabrowski J, Casali RA, Mussig HJ, Baierle RJ, Caldas MJ. Mechanism of dopant segregation to Si'O IND.2'/Si(001) interfaces [Internet]. Journal of Vacuum Science & Technology B. 2000 ; 18( 4): 2160-2164.[citado 2024 out. 08 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JVTBD9000018000004002160000001&idtype=cvips
