Hyperspherical formulation of impurity-bound excitons in semiconductors (1992)
Source: Physical Review B. Unidade: IFSC
Subjects: FÍSICA, FÍSICA MATEMÁTICA, FÍSICA MODERNA
ABNT
DE GROOTE, J J S et al. Hyperspherical formulation of impurity-bound excitons in semiconductors. Physical Review B, v. 46, n. 4 , p. 2101-8, 1992Tradução . . Disponível em: https://doi.org/10.1103/physrevb.46.2101. Acesso em: 15 nov. 2024.APA
De Groote, J. J. S., Hornos, J. E. M., Coelho, H. T., & Caldwell, C. D. (1992). Hyperspherical formulation of impurity-bound excitons in semiconductors. Physical Review B, 46( 4 ), 2101-8. doi:10.1103/physrevb.46.2101NLM
De Groote JJS, Hornos JEM, Coelho HT, Caldwell CD. Hyperspherical formulation of impurity-bound excitons in semiconductors [Internet]. Physical Review B. 1992 ;46( 4 ): 2101-8.[citado 2024 nov. 15 ] Available from: https://doi.org/10.1103/physrevb.46.2101Vancouver
De Groote JJS, Hornos JEM, Coelho HT, Caldwell CD. Hyperspherical formulation of impurity-bound excitons in semiconductors [Internet]. Physical Review B. 1992 ;46( 4 ): 2101-8.[citado 2024 nov. 15 ] Available from: https://doi.org/10.1103/physrevb.46.2101