A new pathway for Si nanocrystal formation: oxi-reduction induced by impurity implantation (2003)
Source: Materials Research Society Symposium Proceedings. Conference titles: MRS Spring Meeting. Unidade: IFSC
Subjects: CRISTALOGRAFIA, FOTOLUMINESCÊNCIA, ESPECTROSCOPIA RAMAN, SILICONE
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JACOBSOHN, L. G. et al. A new pathway for Si nanocrystal formation: oxi-reduction induced by impurity implantation. 2003, Anais.. Warrendale: Materials Research Society - MRS, 2003. . Acesso em: 02 out. 2024.APA
Jacobsohn, L. G., Zanatta, A. R., Lee, J. K., Cooke, D. W., Bennett, B. L., Wetteland, C. J., et al. (2003). A new pathway for Si nanocrystal formation: oxi-reduction induced by impurity implantation. In Materials Research Society Symposium Proceedings (Vol. 777). Warrendale: Materials Research Society - MRS.NLM
Jacobsohn LG, Zanatta AR, Lee JK, Cooke DW, Bennett BL, Wetteland CJ, Tesmer JR, Nastasi M. A new pathway for Si nanocrystal formation: oxi-reduction induced by impurity implantation. Materials Research Society Symposium Proceedings. 2003 ; 777[citado 2024 out. 02 ]Vancouver
Jacobsohn LG, Zanatta AR, Lee JK, Cooke DW, Bennett BL, Wetteland CJ, Tesmer JR, Nastasi M. A new pathway for Si nanocrystal formation: oxi-reduction induced by impurity implantation. Materials Research Society Symposium Proceedings. 2003 ; 777[citado 2024 out. 02 ]