ReP USP - Resultado da busca

Trabalho de evento-resumo
Study of porous silicon embedded with II-VI semiconductor compounds by fotoreflectance spectroscopy (1997)
Choque, Nilo Maurício Sotomayor; Soares, Júlio Antônio Nieri de Toledo; Enderlein, Rolf; Leite, J. R.; Belogorokhov, Alexander Ivanovich; Belogorokhova, Lubov Ivanovna
Source: Resumos. Conference titles: Encontro Nacional de Física da Matéria Condensada. Unidade: IF
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CHOQUE, Nilo Maurício Sotomayor et al. Study of porous silicon embedded with II-VI semiconductor compounds by fotoreflectance spectroscopy. 1997, Anais.. São Paulo: Sociedade Brasileira de Física, 1997. . Acesso em: 28 set. 2024.
APA
Choque, N. M. S., Soares, J. A. N. de T., Enderlein, R., Leite, J. R., Belogorokhov, A. I., & Belogorokhova, L. I. (1997). Study of porous silicon embedded with II-VI semiconductor compounds by fotoreflectance spectroscopy. In Resumos. São Paulo: Sociedade Brasileira de Física.
NLM
Choque NMS, Soares JAN de T, Enderlein R, Leite JR, Belogorokhov AI, Belogorokhova LI. Study of porous silicon embedded with II-VI semiconductor compounds by fotoreflectance spectroscopy. Resumos. 1997 ;[citado 2024 set. 28 ]
Vancouver
Choque NMS, Soares JAN de T, Enderlein R, Leite JR, Belogorokhov AI, Belogorokhova LI. Study of porous silicon embedded with II-VI semiconductor compounds by fotoreflectance spectroscopy. Resumos. 1997 ;[citado 2024 set. 28 ]
Trabalho de evento-resumo
Photoluminescence characterization of porous silicon embedded with Cds, ZnSe and CdSe semiconductor compounds (1997)
Belogorokhov, Alexander Ivanovich; Karavanskii, Vladimir Andreevich; Belogorokhova, Lubov Ivanovna; Enderlein, Rolf; Leite, J. R.; Tabata, Américo
Source: Resumos. Conference titles: Encontro Nacional de Física da Matéria Condensada. Unidade: IF
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BELOGOROKHOV, Alexander Ivanovich et al. Photoluminescence characterization of porous silicon embedded with Cds, ZnSe and CdSe semiconductor compounds. 1997, Anais.. São Paulo: Sociedade Brasileira de Física, 1997. . Acesso em: 28 set. 2024.
APA
Belogorokhov, A. I., Karavanskii, V. A., Belogorokhova, L. I., Enderlein, R., Leite, J. R., & Tabata, A. (1997). Photoluminescence characterization of porous silicon embedded with Cds, ZnSe and CdSe semiconductor compounds. In Resumos. São Paulo: Sociedade Brasileira de Física.
NLM
Belogorokhov AI, Karavanskii VA, Belogorokhova LI, Enderlein R, Leite JR, Tabata A. Photoluminescence characterization of porous silicon embedded with Cds, ZnSe and CdSe semiconductor compounds. Resumos. 1997 ;[citado 2024 set. 28 ]
Vancouver
Belogorokhov AI, Karavanskii VA, Belogorokhova LI, Enderlein R, Leite JR, Tabata A. Photoluminescence characterization of porous silicon embedded with Cds, ZnSe and CdSe semiconductor compounds. Resumos. 1997 ;[citado 2024 set. 28 ]
Artigo de periodico
Transition between heavy hole - light states in the valence band of CdTe at temperatures 5k - 350k (1997)
Belogorokhov, Alexander Ivanovich; Leite, J. R.; Belogorokhova, Lubov Ivanovna
Source: Brazilian Journal of Physics. Unidade: IF
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BELOGOROKHOV, Alexander Ivanovich e LEITE, J. R. e BELOGOROKHOVA, Lubov Ivanovna. Transition between heavy hole - light states in the valence band of CdTe at temperatures 5k - 350k. Brazilian Journal of Physics, v. 27A, n. 4, p. 332-335, 1997Tradução . . Acesso em: 28 set. 2024.
APA
Belogorokhov, A. I., Leite, J. R., & Belogorokhova, L. I. (1997). Transition between heavy hole - light states in the valence band of CdTe at temperatures 5k - 350k. Brazilian Journal of Physics, 27A( 4), 332-335.
NLM
Belogorokhov AI, Leite JR, Belogorokhova LI. Transition between heavy hole - light states in the valence band of CdTe at temperatures 5k - 350k. Brazilian Journal of Physics. 1997 ; 27A( 4): 332-335.[citado 2024 set. 28 ]
Vancouver
Belogorokhov AI, Leite JR, Belogorokhova LI. Transition between heavy hole - light states in the valence band of CdTe at temperatures 5k - 350k. Brazilian Journal of Physics. 1997 ; 27A( 4): 332-335.[citado 2024 set. 28 ]
Trabalho de evento-resumo
Investigation of the real semiconductor laser structure by photoreflectance method (1997)
Trentin, R.; Soares, Júlio Antônio Nieri de Toledo; Enderlein, Rolf; Leite, J. R.; Belogorokhov, Alexander Ivanovich; Belogorokhova, Lubov Ivanovna; Vdovin, Vladimir
Source: Resumos. Conference titles: Encontro Nacional de Física da Matéria Condensada. Unidade: IF
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
TRENTIN, R. et al. Investigation of the real semiconductor laser structure by photoreflectance method. 1997, Anais.. São Paulo: Sociedade Brasileira de Física, 1997. . Acesso em: 28 set. 2024.
APA
Trentin, R., Soares, J. A. N. de T., Enderlein, R., Leite, J. R., Belogorokhov, A. I., Belogorokhova, L. I., & Vdovin, V. (1997). Investigation of the real semiconductor laser structure by photoreflectance method. In Resumos. São Paulo: Sociedade Brasileira de Física.
NLM
Trentin R, Soares JAN de T, Enderlein R, Leite JR, Belogorokhov AI, Belogorokhova LI, Vdovin V. Investigation of the real semiconductor laser structure by photoreflectance method. Resumos. 1997 ;[citado 2024 set. 28 ]
Vancouver
Trentin R, Soares JAN de T, Enderlein R, Leite JR, Belogorokhov AI, Belogorokhova LI, Vdovin V. Investigation of the real semiconductor laser structure by photoreflectance method. Resumos. 1997 ;[citado 2024 set. 28 ]

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