Silicon surface roughening induced by c'BR''F IND.3' plasma during the reactive ion etching (1992)
Yamamoto, R K; Lopes, M C V; Akamine, C T; Santos Filho, Sebastião Gomes dos 
; Hasenack, Claus Martin
Source: Resumos. Conference titles: Congresso Brasileiro de Engenharia e Ciencia dos Materiais. Unidade: EP
Assunto: SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
YAMAMOTO, R K et al. Silicon surface roughening induced by c'BR''F IND.3' plasma during the reactive ion etching. 1992, Anais.. Campinas: Unicamp/Cbecimat, 1992. . Acesso em: 01 nov. 2024.APA
Yamamoto, R. K., Lopes, M. C. V., Akamine, C. T., Santos Filho, S. G. dos, & Hasenack, C. M. (1992). Silicon surface roughening induced by c'BR''F IND.3' plasma during the reactive ion etching. In Resumos. Campinas: Unicamp/Cbecimat.NLM
Yamamoto RK, Lopes MCV, Akamine CT, Santos Filho SG dos, Hasenack CM. Silicon surface roughening induced by c'BR''F IND.3' plasma during the reactive ion etching. Resumos. 1992 ;[citado 2024 nov. 01 ]Vancouver
Yamamoto RK, Lopes MCV, Akamine CT, Santos Filho SG dos, Hasenack CM. Silicon surface roughening induced by c'BR''F IND.3' plasma during the reactive ion etching. Resumos. 1992 ;[citado 2024 nov. 01 ]
