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Artigo de periodico
A new class of large band gap quantum spin hall insulators: 2D fluorinated group-IV binary compounds (2016)
Padilha, J. E.; Pontes, R. B.; Schmidt, T. M.; Miwa, R. H.; Fazzio, Adalberto
Source: SCIENTIFIC REPORTS. Unidade: IF
Subjects: SPIN, TOPOLOGIA
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ABNT
PADILHA, J. E. et al. A new class of large band gap quantum spin hall insulators: 2D fluorinated group-IV binary compounds. SCIENTIFIC REPORTS, v. 6, p. 26123 , 2016Tradução . . Disponível em: http://www.nature.com/articles/srep26123. Acesso em: 08 jul. 2024.
APA
Padilha, J. E., Pontes, R. B., Schmidt, T. M., Miwa, R. H., & Fazzio, A. (2016). A new class of large band gap quantum spin hall insulators: 2D fluorinated group-IV binary compounds. SCIENTIFIC REPORTS, 6, 26123 . doi:10.1038/srep26123
NLM
Padilha JE, Pontes RB, Schmidt TM, Miwa RH, Fazzio A. A new class of large band gap quantum spin hall insulators: 2D fluorinated group-IV binary compounds [Internet]. SCIENTIFIC REPORTS. 2016 ; 6 26123 .[citado 2024 jul. 08 ] Available from: http://www.nature.com/articles/srep26123
Vancouver
Padilha JE, Pontes RB, Schmidt TM, Miwa RH, Fazzio A. A new class of large band gap quantum spin hall insulators: 2D fluorinated group-IV binary compounds [Internet]. SCIENTIFIC REPORTS. 2016 ; 6 26123 .[citado 2024 jul. 08 ] Available from: http://www.nature.com/articles/srep26123
Artigo de periodico
Tuning the thermoelectric properties of a single-molecule junction by mechanical stretching (2015)
Torres, Alberto Martins; Pontes, Renato B.; Silva, Antonio Jose Roque da; Fazzio, Adalberto
Source: PHYSICAL CHEMISTRY CHEMICAL PHYSICS. Unidade: IF
Subjects: TERMOELETRICIDADE, CONDUÇÃO
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ABNT
TORRES, Alberto Martins et al. Tuning the thermoelectric properties of a single-molecule junction by mechanical stretching. PHYSICAL CHEMISTRY CHEMICAL PHYSICS, v. 17, n. ja 2015, p. 5386-5392, 2015Tradução . . Disponível em: https://doi.org/10.1039/c4cp04635h. Acesso em: 08 jul. 2024.
APA
Torres, A. M., Pontes, R. B., Silva, A. J. R. da, & Fazzio, A. (2015). Tuning the thermoelectric properties of a single-molecule junction by mechanical stretching. PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 17( ja 2015), 5386-5392. doi:10.1039/c4cp04635h
NLM
Torres AM, Pontes RB, Silva AJR da, Fazzio A. Tuning the thermoelectric properties of a single-molecule junction by mechanical stretching [Internet]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS. 2015 ; 17( ja 2015): 5386-5392.[citado 2024 jul. 08 ] Available from: https://doi.org/10.1039/c4cp04635h
Vancouver
Torres AM, Pontes RB, Silva AJR da, Fazzio A. Tuning the thermoelectric properties of a single-molecule junction by mechanical stretching [Internet]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS. 2015 ; 17( ja 2015): 5386-5392.[citado 2024 jul. 08 ] Available from: https://doi.org/10.1039/c4cp04635h
Artigo de periodico
Graphene nanoribbon intercalated with hexagonal boron nitride: electronic transport properties from ab initio calculations (2013)
Padilha, Jose Eduardo; Pontes, Renato Borges; Silva, Antonio Jose Roque da ; Fazzio, Adalberto
Source: SOLID STATE COMMUNICATIONS. Unidade: IF
Subjects: FERROMAGNETISMO, SPIN
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ABNT
PADILHA, Jose Eduardo et al. Graphene nanoribbon intercalated with hexagonal boron nitride: electronic transport properties from ab initio calculations. SOLID STATE COMMUNICATIONS, v. no2013, p. 24-29, 2013Tradução . . Disponível em: https://doi.org/10.1016/j.ssc.2013.08.022. Acesso em: 08 jul. 2024.
APA
Padilha, J. E., Pontes, R. B., Silva, A. J. R. da, & Fazzio, A. (2013). Graphene nanoribbon intercalated with hexagonal boron nitride: electronic transport properties from ab initio calculations. SOLID STATE COMMUNICATIONS, no2013, 24-29. doi:10.1016/j.ssc.2013.08.022
NLM
Padilha JE, Pontes RB, Silva AJR da, Fazzio A. Graphene nanoribbon intercalated with hexagonal boron nitride: electronic transport properties from ab initio calculations [Internet]. SOLID STATE COMMUNICATIONS. 2013 ; no2013 24-29.[citado 2024 jul. 08 ] Available from: https://doi.org/10.1016/j.ssc.2013.08.022
Vancouver
Padilha JE, Pontes RB, Silva AJR da, Fazzio A. Graphene nanoribbon intercalated with hexagonal boron nitride: electronic transport properties from ab initio calculations [Internet]. SOLID STATE COMMUNICATIONS. 2013 ; no2013 24-29.[citado 2024 jul. 08 ] Available from: https://doi.org/10.1016/j.ssc.2013.08.022
Trabalho de evento-resumo periodico
Bilayer Silicene: a first principles investigation (2013)
Pontes, Renato Borges; Padilha, José Eduardo; Fazzio, Adalberto; Silva, Antonio Jose Roque da
Source: Abstracts. Conference titles: APS March Meeting. Unidade: IF
Subjects: MATÉRIA CONDENSADA, ESTRUTURA ELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PONTES, Renato Borges et al. Bilayer Silicene: a first principles investigation. Abstracts. Maryland,: APS. Disponível em: http://absimage.aps.org/image/MAR13/MWS_MAR13-2012-006636.pdf. Acesso em: 08 jul. 2024. , 2013
APA
Pontes, R. B., Padilha, J. E., Fazzio, A., & Silva, A. J. R. da. (2013). Bilayer Silicene: a first principles investigation. Abstracts. Maryland,: APS. Recuperado de http://absimage.aps.org/image/MAR13/MWS_MAR13-2012-006636.pdf
NLM
Pontes RB, Padilha JE, Fazzio A, Silva AJR da. Bilayer Silicene: a first principles investigation [Internet]. Abstracts. 2013 ; 58( 1):[citado 2024 jul. 08 ] Available from: http://absimage.aps.org/image/MAR13/MWS_MAR13-2012-006636.pdf
Vancouver
Pontes RB, Padilha JE, Fazzio A, Silva AJR da. Bilayer Silicene: a first principles investigation [Internet]. Abstracts. 2013 ; 58( 1):[citado 2024 jul. 08 ] Available from: http://absimage.aps.org/image/MAR13/MWS_MAR13-2012-006636.pdf
Trabalho de evento-resumo periodico
Electronic Structure calculations in a 2D SixGe1-x alloy under an applied electric field (2013)
Padilha, José Eduardo; Pontes, Renato Borges; Seixas, Leandro; Silva, Antonio Jose Roque da; Fazzio, Adalberto
Source: Abstracts. Conference titles: APS March Meeting. Unidade: IF
Subjects: MATÉRIA CONDENSADA, ESTRUTURA ELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PADILHA, José Eduardo et al. Electronic Structure calculations in a 2D SixGe1-x alloy under an applied electric field. Abstracts. Maryland,: APS. Disponível em: http://absimage.aps.org/image/MAR13/MWS_MAR13-2012-007425.pdf. Acesso em: 08 jul. 2024. , 2013
APA
Padilha, J. E., Pontes, R. B., Seixas, L., Silva, A. J. R. da, & Fazzio, A. (2013). Electronic Structure calculations in a 2D SixGe1-x alloy under an applied electric field. Abstracts. Maryland,: APS. Recuperado de http://absimage.aps.org/image/MAR13/MWS_MAR13-2012-007425.pdf
NLM
Padilha JE, Pontes RB, Seixas L, Silva AJR da, Fazzio A. Electronic Structure calculations in a 2D SixGe1-x alloy under an applied electric field [Internet]. Abstracts. 2013 ; 58( 1):[citado 2024 jul. 08 ] Available from: http://absimage.aps.org/image/MAR13/MWS_MAR13-2012-007425.pdf
Vancouver
Padilha JE, Pontes RB, Seixas L, Silva AJR da, Fazzio A. Electronic Structure calculations in a 2D SixGe1-x alloy under an applied electric field [Internet]. Abstracts. 2013 ; 58( 1):[citado 2024 jul. 08 ] Available from: http://absimage.aps.org/image/MAR13/MWS_MAR13-2012-007425.pdf
Artigo de periodico
Quantum spin hall effect in a disordered hexagonal 'SI' IND. x''GE' IND. 1−x' alloy (2013)
Padilha, J. E. ; Pontes, Renato B.; Seixas, L. ; Silva, Antonio Jose Roque da ; Fazzio, Adalberto
Source: PHYSICAL REVIEW B. Unidade: IF
Subjects: TOPOLOGIA, SPIN
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PADILHA, J. E. et al. Quantum spin hall effect in a disordered hexagonal 'SI' IND. x''GE' IND. 1−x' alloy. PHYSICAL REVIEW B, v. no 2013, n. 20, p. 201106, 2013Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.88.201106. Acesso em: 08 jul. 2024.
APA
Padilha, J. E., Pontes, R. B., Seixas, L., Silva, A. J. R. da, & Fazzio, A. (2013). Quantum spin hall effect in a disordered hexagonal 'SI' IND. x''GE' IND. 1−x' alloy. PHYSICAL REVIEW B, no 2013( 20), 201106. doi:10.1103/PhysRevB.88.201106
NLM
Padilha JE, Pontes RB, Seixas L, Silva AJR da, Fazzio A. Quantum spin hall effect in a disordered hexagonal 'SI' IND. x''GE' IND. 1−x' alloy [Internet]. PHYSICAL REVIEW B. 2013 ; no 2013( 20): 201106.[citado 2024 jul. 08 ] Available from: https://doi.org/10.1103/PhysRevB.88.201106
Vancouver
Padilha JE, Pontes RB, Seixas L, Silva AJR da, Fazzio A. Quantum spin hall effect in a disordered hexagonal 'SI' IND. x''GE' IND. 1−x' alloy [Internet]. PHYSICAL REVIEW B. 2013 ; no 2013( 20): 201106.[citado 2024 jul. 08 ] Available from: https://doi.org/10.1103/PhysRevB.88.201106

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