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Artigo de periodico
On the nature of the solvated electron in ice 'I IND. h' (2016)
Koning, Maurice de; Antonelli, Alex; Fazzio, Adalberto; Silva, Antonio Jose Roque da
Source: Physical Chemistry Chemical Physics. Unidade: IF
Subjects: ELÉTRONS, DINÂMICA
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ABNT
KONING, Maurice de et al. On the nature of the solvated electron in ice 'I IND. h'. Physical Chemistry Chemical Physics, v. fe 2016, n. 6, p. 4652-4658, 2016Tradução . . Disponível em: http://pubs.rsc.org/en/content/articlelanding/2016/cp/c5cp06229b#!divAbstract. Acesso em: 03 out. 2024.
APA
Koning, M. de, Antonelli, A., Fazzio, A., & Silva, A. J. R. da. (2016). On the nature of the solvated electron in ice 'I IND. h'. Physical Chemistry Chemical Physics, fe 2016( 6), 4652-4658. doi:10.1039/c5cp06229b
NLM
Koning M de, Antonelli A, Fazzio A, Silva AJR da. On the nature of the solvated electron in ice 'I IND. h' [Internet]. Physical Chemistry Chemical Physics. 2016 ; fe 2016( 6): 4652-4658.[citado 2024 out. 03 ] Available from: http://pubs.rsc.org/en/content/articlelanding/2016/cp/c5cp06229b#!divAbstract
Vancouver
Koning M de, Antonelli A, Fazzio A, Silva AJR da. On the nature of the solvated electron in ice 'I IND. h' [Internet]. Physical Chemistry Chemical Physics. 2016 ; fe 2016( 6): 4652-4658.[citado 2024 out. 03 ] Available from: http://pubs.rsc.org/en/content/articlelanding/2016/cp/c5cp06229b#!divAbstract
Artigo de periodico
Hosting of 'LA' POT. 3+' guest ions in type-I 'GE' clathrates: a first-principles characterization for thermoelectric applications (2016)
Gonzalez-Romero, Robert L.; Avila, Marcos A.; Antonelli, Alex; Miranda, Caetano Rodrigues
Source: Computational Materials Science. Unidade: IF
Subjects: CONDUTIVIDADE TÉRMICA, ESTRUTURA ELETRÔNICA
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ABNT
GONZALEZ-ROMERO, Robert L. et al. Hosting of 'LA' POT. 3+' guest ions in type-I 'GE' clathrates: a first-principles characterization for thermoelectric applications. Computational Materials Science, v. 122, p. 46-56, 2016Tradução . . Disponível em: https://doi.org/10.1016/j.commatsci.2016.05.013. Acesso em: 03 out. 2024.
APA
Gonzalez-Romero, R. L., Avila, M. A., Antonelli, A., & Miranda, C. R. (2016). Hosting of 'LA' POT. 3+' guest ions in type-I 'GE' clathrates: a first-principles characterization for thermoelectric applications. Computational Materials Science, 122, 46-56. doi:10.1016/j.commatsci.2016.05.013
NLM
Gonzalez-Romero RL, Avila MA, Antonelli A, Miranda CR. Hosting of 'LA' POT. 3+' guest ions in type-I 'GE' clathrates: a first-principles characterization for thermoelectric applications [Internet]. Computational Materials Science. 2016 ; 122 46-56.[citado 2024 out. 03 ] Available from: https://doi.org/10.1016/j.commatsci.2016.05.013
Vancouver
Gonzalez-Romero RL, Avila MA, Antonelli A, Miranda CR. Hosting of 'LA' POT. 3+' guest ions in type-I 'GE' clathrates: a first-principles characterization for thermoelectric applications [Internet]. Computational Materials Science. 2016 ; 122 46-56.[citado 2024 out. 03 ] Available from: https://doi.org/10.1016/j.commatsci.2016.05.013
Artigo de periodico
Structure and energetics of molecular point defects in ice "I IND.h" (2006)
Koning, Maurice de; Antonelli, Alex; Silva, Antonio Jose Roque da; Fazzio, Adalberto
Source: Physical Review Letters. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, FÍSICA MOLECULAR
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ABNT
KONING, Maurice de et al. Structure and energetics of molecular point defects in ice "I IND.h". Physical Review Letters, v. 97, n. 15, p. 155501/1-155501/4, 2006Tradução . . Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000097000015155501000001&idtype=cvips&prog=normal. Acesso em: 03 out. 2024.
APA
Koning, M. de, Antonelli, A., Silva, A. J. R. da, & Fazzio, A. (2006). Structure and energetics of molecular point defects in ice "I IND.h". Physical Review Letters, 97( 15), 155501/1-155501/4. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000097000015155501000001&idtype=cvips&prog=normal
NLM
Koning M de, Antonelli A, Silva AJR da, Fazzio A. Structure and energetics of molecular point defects in ice "I IND.h" [Internet]. Physical Review Letters. 2006 ;97( 15): 155501/1-155501/4.[citado 2024 out. 03 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000097000015155501000001&idtype=cvips&prog=normal
Vancouver
Koning M de, Antonelli A, Silva AJR da, Fazzio A. Structure and energetics of molecular point defects in ice "I IND.h" [Internet]. Physical Review Letters. 2006 ;97( 15): 155501/1-155501/4.[citado 2024 out. 03 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000097000015155501000001&idtype=cvips&prog=normal
Artigo de periodico
Orientational Defects in Ice Ih: an interpretation of electrical conductivity measurements (2006)
Koning, M de; Antonelli, Alex; Silva, Antonio Jose Roque da; Fazzio, Adalberto
Source: Physical Review Letters. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, SEMICONDUTORES
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ABNT
KONING, M de et al. Orientational Defects in Ice Ih: an interpretation of electrical conductivity measurements. Physical Review Letters, v. 96, n. 7, p. 075501/1-075501/4, 2006Tradução . . Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000096000007075501000001&idtype=cvips&prog=normal. Acesso em: 03 out. 2024.
APA
Koning, M. de, Antonelli, A., Silva, A. J. R. da, & Fazzio, A. (2006). Orientational Defects in Ice Ih: an interpretation of electrical conductivity measurements. Physical Review Letters, 96( 7), 075501/1-075501/4. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000096000007075501000001&idtype=cvips&prog=normal
NLM
Koning M de, Antonelli A, Silva AJR da, Fazzio A. Orientational Defects in Ice Ih: an interpretation of electrical conductivity measurements [Internet]. Physical Review Letters. 2006 ;96( 7): 075501/1-075501/4.[citado 2024 out. 03 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000096000007075501000001&idtype=cvips&prog=normal
Vancouver
Koning M de, Antonelli A, Silva AJR da, Fazzio A. Orientational Defects in Ice Ih: an interpretation of electrical conductivity measurements [Internet]. Physical Review Letters. 2006 ;96( 7): 075501/1-075501/4.[citado 2024 out. 03 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000096000007075501000001&idtype=cvips&prog=normal
Trabalho de evento
Defects, mechanical properties, and charge transport in carbon nanotubes (2005)
Silva, Antonio José Roque da; Novaes, Frederico D; Rossi, Mariana; Fazzio, Adalberto; Antonelli, Alex
Source: Program. Conference titles: Latin American Congress of Surface Science and its Applications. Unidade: IF
Subjects: MATÉRIA CONDENSADA, SUPERFÍCIE FÍSICA, MATERIAIS (PROPRIEDADES MECÂNICAS)
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ABNT
SILVA, Antonio José Roque da et al. Defects, mechanical properties, and charge transport in carbon nanotubes. 2005, Anais.. Rio de Janeiro: PUC/RIO, 2005. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/extras/clacsa/sys/resumos/R0140-1.pdf. Acesso em: 03 out. 2024.
APA
Silva, A. J. R. da, Novaes, F. D., Rossi, M., Fazzio, A., & Antonelli, A. (2005). Defects, mechanical properties, and charge transport in carbon nanotubes. In Program. Rio de Janeiro: PUC/RIO. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/extras/clacsa/sys/resumos/R0140-1.pdf
NLM
Silva AJR da, Novaes FD, Rossi M, Fazzio A, Antonelli A. Defects, mechanical properties, and charge transport in carbon nanotubes [Internet]. Program. 2005 ;[citado 2024 out. 03 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/extras/clacsa/sys/resumos/R0140-1.pdf
Vancouver
Silva AJR da, Novaes FD, Rossi M, Fazzio A, Antonelli A. Defects, mechanical properties, and charge transport in carbon nanotubes [Internet]. Program. 2005 ;[citado 2024 out. 03 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/extras/clacsa/sys/resumos/R0140-1.pdf
Artigo de periodico
Bundling up carbon nanotubes through Wigner (2005)
Silva, Antonio Jose Roque da; Fazzio, Adalberto; Antonelli, Alex
Source: Nano Letters. Unidade: IF
Subjects: MATERIAIS, ESTRUTURA ELETRÔNICA, NANOTECNOLOGIA
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ABNT
SILVA, Antonio Jose Roque da e FAZZIO, Adalberto e ANTONELLI, Alex. Bundling up carbon nanotubes through Wigner. Nano Letters, v. 5, n. 6, p. 1045-1049, 2005Tradução . . Disponível em: http://pubs.acs.org/cgi-bin/article.cgi/nalefd/2005/5/i06/pdf/nl050457c.pdf. Acesso em: 03 out. 2024.
APA
Silva, A. J. R. da, Fazzio, A., & Antonelli, A. (2005). Bundling up carbon nanotubes through Wigner. Nano Letters, 5( 6), 1045-1049. Recuperado de http://pubs.acs.org/cgi-bin/article.cgi/nalefd/2005/5/i06/pdf/nl050457c.pdf
NLM
Silva AJR da, Fazzio A, Antonelli A. Bundling up carbon nanotubes through Wigner [Internet]. Nano Letters. 2005 ; 5( 6): 1045-1049.[citado 2024 out. 03 ] Available from: http://pubs.acs.org/cgi-bin/article.cgi/nalefd/2005/5/i06/pdf/nl050457c.pdf
Vancouver
Silva AJR da, Fazzio A, Antonelli A. Bundling up carbon nanotubes through Wigner [Internet]. Nano Letters. 2005 ; 5( 6): 1045-1049.[citado 2024 out. 03 ] Available from: http://pubs.acs.org/cgi-bin/article.cgi/nalefd/2005/5/i06/pdf/nl050457c.pdf
Artigo de periodico
Stabilization of substitutional Mn in silicon-based semiconductors (2004)
Silva, Antonio Jose Roque da; Fazzio, Adalberto; Antonelli, Alex
Source: Physical Review B. Unidade: IF
Subjects: MATÉRIA CONDENSADA, SEMICONDUTORES
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ABNT
SILVA, Antonio Jose Roque da e FAZZIO, Adalberto e ANTONELLI, Alex. Stabilization of substitutional Mn in silicon-based semiconductors. Physical Review B, v. 70, p. 193205/1-193205/4, 2004Tradução . . Disponível em: https://doi.org/10.1103/physrevb.70.193205. Acesso em: 03 out. 2024.
APA
Silva, A. J. R. da, Fazzio, A., & Antonelli, A. (2004). Stabilization of substitutional Mn in silicon-based semiconductors. Physical Review B, 70, 193205/1-193205/4. doi:10.1103/physrevb.70.193205
NLM
Silva AJR da, Fazzio A, Antonelli A. Stabilization of substitutional Mn in silicon-based semiconductors [Internet]. Physical Review B. 2004 ; 70 193205/1-193205/4.[citado 2024 out. 03 ] Available from: https://doi.org/10.1103/physrevb.70.193205
Vancouver
Silva AJR da, Fazzio A, Antonelli A. Stabilization of substitutional Mn in silicon-based semiconductors [Internet]. Physical Review B. 2004 ; 70 193205/1-193205/4.[citado 2024 out. 03 ] Available from: https://doi.org/10.1103/physrevb.70.193205
Trabalho de evento-resumo
Vacancies in amorphous silicon: a first principles study (2003)
Miranda, Caetano Rodrigues; Antonelli, Alex; Fazzio, Adalberto; Silva, Antonio Jose Roque da
Source: Resumos. Conference titles: Encontro Nacional de Física da Matéria Condensada 26. Unidade: IF
Assunto: SEMICONDUTORES
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ABNT
MIRANDA, Caetano Rodrigues et al. Vacancies in amorphous silicon: a first principles study. 2003, Anais.. São Paulo: SBF, 2003. . Acesso em: 03 out. 2024.
APA
Miranda, C. R., Antonelli, A., Fazzio, A., & Silva, A. J. R. da. (2003). Vacancies in amorphous silicon: a first principles study. In Resumos. São Paulo: SBF.
NLM
Miranda CR, Antonelli A, Fazzio A, Silva AJR da. Vacancies in amorphous silicon: a first principles study. Resumos. 2003 ;[citado 2024 out. 03 ]
Vancouver
Miranda CR, Antonelli A, Fazzio A, Silva AJR da. Vacancies in amorphous silicon: a first principles study. Resumos. 2003 ;[citado 2024 out. 03 ]
Relatorio tecnico
A possible route to grow a (Mn:'Si IND. (1-x)'Ge IND. x')-based diluted magnetic semiconductor (2003)
Silva, Antonio Jose Roque da; Fazzio, Adalberto; Antonelli, Alex
Unidade: IF
Subjects: MATÉRIA CONDENSADA, MATERIAIS
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ABNT
SILVA, Antonio Jose Roque da e FAZZIO, Adalberto e ANTONELLI, Alex. A possible route to grow a (Mn:'Si IND. (1-x)'Ge IND. x')-based diluted magnetic semiconductor. . São Paulo: IFUSP. Disponível em: http://snsbf2.if.usp.br/PS_cache/cond-mat/pdf/0310/0310770.pdf. Acesso em: 03 out. 2024. , 2003
APA
Silva, A. J. R. da, Fazzio, A., & Antonelli, A. (2003). A possible route to grow a (Mn:'Si IND. (1-x)'Ge IND. x')-based diluted magnetic semiconductor. São Paulo: IFUSP. Recuperado de http://snsbf2.if.usp.br/PS_cache/cond-mat/pdf/0310/0310770.pdf
NLM
Silva AJR da, Fazzio A, Antonelli A. A possible route to grow a (Mn:'Si IND. (1-x)'Ge IND. x')-based diluted magnetic semiconductor [Internet]. 2003 ;[citado 2024 out. 03 ] Available from: http://snsbf2.if.usp.br/PS_cache/cond-mat/pdf/0310/0310770.pdf
Vancouver
Silva AJR da, Fazzio A, Antonelli A. A possible route to grow a (Mn:'Si IND. (1-x)'Ge IND. x')-based diluted magnetic semiconductor [Internet]. 2003 ;[citado 2024 out. 03 ] Available from: http://snsbf2.if.usp.br/PS_cache/cond-mat/pdf/0310/0310770.pdf
Artigo de periodico
Interaction of As impurities with 30'GRAUS' partial dislocations in Si: an ab initio investigation (2002)
Antonelli, Alex; Justo Filho, João Francisco ; Fazzio, Adalberto
Source: Journal of Applied Physics. Unidade: IF
Subjects: SEMICONDUTORES, MATERIAIS (PROPRIEDADES ELÉTRICAS), ESTRUTURA ELETRÔNICA
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ABNT
ANTONELLI, Alex e JUSTO FILHO, João Francisco e FAZZIO, Adalberto. Interaction of As impurities with 30'GRAUS' partial dislocations in Si: an ab initio investigation. Journal of Applied Physics, v. 91, n. 9, p. 5892-5895, 2002Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000091000009005892000001&idtype=cvips. Acesso em: 03 out. 2024.
APA
Antonelli, A., Justo Filho, J. F., & Fazzio, A. (2002). Interaction of As impurities with 30'GRAUS' partial dislocations in Si: an ab initio investigation. Journal of Applied Physics, 91( 9), 5892-5895. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000091000009005892000001&idtype=cvips
NLM
Antonelli A, Justo Filho JF, Fazzio A. Interaction of As impurities with 30'GRAUS' partial dislocations in Si: an ab initio investigation [Internet]. Journal of Applied Physics. 2002 ; 91( 9): 5892-5895.[citado 2024 out. 03 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000091000009005892000001&idtype=cvips
Vancouver
Antonelli A, Justo Filho JF, Fazzio A. Interaction of As impurities with 30'GRAUS' partial dislocations in Si: an ab initio investigation [Internet]. Journal of Applied Physics. 2002 ; 91( 9): 5892-5895.[citado 2024 out. 03 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000091000009005892000001&idtype=cvips
Artigo de periodico
Arsenic segregation, pairing and mobility on the cores of partial dislocations in silicon (2002)
Antonelli, Alex; Justo Filho, João Francisco ; Fazzio, Adalberto
Source: Journal of Physics-Condensed Matter. Unidades: EP, IF
Assunto: SEMICONDUTORES
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ABNT
ANTONELLI, Alex e JUSTO FILHO, João Francisco e FAZZIO, Adalberto. Arsenic segregation, pairing and mobility on the cores of partial dislocations in silicon. Journal of Physics-Condensed Matter, v. 14, n. 48, p. 12761-12765, 2002Tradução . . Disponível em: https://doi.org/10.1088/0953-8984/14/48/314. Acesso em: 03 out. 2024.
APA
Antonelli, A., Justo Filho, J. F., & Fazzio, A. (2002). Arsenic segregation, pairing and mobility on the cores of partial dislocations in silicon. Journal of Physics-Condensed Matter, 14( 48), 12761-12765. doi:10.1088/0953-8984/14/48/314
NLM
Antonelli A, Justo Filho JF, Fazzio A. Arsenic segregation, pairing and mobility on the cores of partial dislocations in silicon [Internet]. Journal of Physics-Condensed Matter. 2002 ; 14( 48): 12761-12765.[citado 2024 out. 03 ] Available from: https://doi.org/10.1088/0953-8984/14/48/314
Vancouver
Antonelli A, Justo Filho JF, Fazzio A. Arsenic segregation, pairing and mobility on the cores of partial dislocations in silicon [Internet]. Journal of Physics-Condensed Matter. 2002 ; 14( 48): 12761-12765.[citado 2024 out. 03 ] Available from: https://doi.org/10.1088/0953-8984/14/48/314
Artigo de periodico
Dopant interaction with a dislocation in silicon: local and non-local effects (2001)
Antonelli, Alex; Justo Filho, João Francisco ; Fazzio, Adalberto
Source: Physica B. Unidade: IF
Subjects: FILMES FINOS, MUDANÇA DE FASE, MATÉRIA CONDENSADA
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ABNT
ANTONELLI, Alex e JUSTO FILHO, João Francisco e FAZZIO, Adalberto. Dopant interaction with a dislocation in silicon: local and non-local effects. Physica B, v. 308, p. 470-473, 2001Tradução . . Disponível em: https://doi.org/10.1016/s0921-4526(01)00743-8. Acesso em: 03 out. 2024.
APA
Antonelli, A., Justo Filho, J. F., & Fazzio, A. (2001). Dopant interaction with a dislocation in silicon: local and non-local effects. Physica B, 308, 470-473. doi:10.1016/s0921-4526(01)00743-8
NLM
Antonelli A, Justo Filho JF, Fazzio A. Dopant interaction with a dislocation in silicon: local and non-local effects [Internet]. Physica B. 2001 ; 308 470-473.[citado 2024 out. 03 ] Available from: https://doi.org/10.1016/s0921-4526(01)00743-8
Vancouver
Antonelli A, Justo Filho JF, Fazzio A. Dopant interaction with a dislocation in silicon: local and non-local effects [Internet]. Physica B. 2001 ; 308 470-473.[citado 2024 out. 03 ] Available from: https://doi.org/10.1016/s0921-4526(01)00743-8
Artigo de periodico
Dislocation core properties in semiconductors (2001)
Justo Filho, João Francisco ; Antonelli, Alex; Fazzio, Adalberto
Source: Solid State Communications. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
JUSTO FILHO, João Francisco e ANTONELLI, Alex e FAZZIO, Adalberto. Dislocation core properties in semiconductors. Solid State Communications, v. 118, n. 12, p. 651-655, 2001Tradução . . Disponível em: https://doi.org/10.1016/s0038-1098(01)00197-1. Acesso em: 03 out. 2024.
APA
Justo Filho, J. F., Antonelli, A., & Fazzio, A. (2001). Dislocation core properties in semiconductors. Solid State Communications, 118( 12), 651-655. doi:10.1016/s0038-1098(01)00197-1
NLM
Justo Filho JF, Antonelli A, Fazzio A. Dislocation core properties in semiconductors [Internet]. Solid State Communications. 2001 ; 118( 12): 651-655.[citado 2024 out. 03 ] Available from: https://doi.org/10.1016/s0038-1098(01)00197-1
Vancouver
Justo Filho JF, Antonelli A, Fazzio A. Dislocation core properties in semiconductors [Internet]. Solid State Communications. 2001 ; 118( 12): 651-655.[citado 2024 out. 03 ] Available from: https://doi.org/10.1016/s0038-1098(01)00197-1
Artigo de periodico
The energetics of dislocation cores in semiconductors and their role on dislocation mobility (2001)
Justo Filho, João Francisco ; Antonelli, Alex; Fazzio, Adalberto
Source: Physica B. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
JUSTO FILHO, João Francisco e ANTONELLI, Alex e FAZZIO, Adalberto. The energetics of dislocation cores in semiconductors and their role on dislocation mobility. Physica B, v. 302-303, p. 398-402, 2001Tradução . . Disponível em: https://doi.org/10.1016/s0921-4526(01)00461-6. Acesso em: 03 out. 2024.
APA
Justo Filho, J. F., Antonelli, A., & Fazzio, A. (2001). The energetics of dislocation cores in semiconductors and their role on dislocation mobility. Physica B, 302-303, 398-402. doi:10.1016/s0921-4526(01)00461-6
NLM
Justo Filho JF, Antonelli A, Fazzio A. The energetics of dislocation cores in semiconductors and their role on dislocation mobility [Internet]. Physica B. 2001 ; 302-303 398-402.[citado 2024 out. 03 ] Available from: https://doi.org/10.1016/s0921-4526(01)00461-6
Vancouver
Justo Filho JF, Antonelli A, Fazzio A. The energetics of dislocation cores in semiconductors and their role on dislocation mobility [Internet]. Physica B. 2001 ; 302-303 398-402.[citado 2024 out. 03 ] Available from: https://doi.org/10.1016/s0921-4526(01)00461-6
Artigo de periodico
Dislocation core reconstruction in zinc-blende semiconductors (2000)
Justo Filho, João Francisco ; Fazzio, Adalberto; Antonelli, Alex
Source: Journal of Physics-Condensed Matter. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
JUSTO FILHO, João Francisco e FAZZIO, Adalberto e ANTONELLI, Alex. Dislocation core reconstruction in zinc-blende semiconductors. Journal of Physics-Condensed Matter, v. 12, n. 49, p. 10039-10044, 2000Tradução . . Disponível em: https://doi.org/10.1088/0953-8984/12/49/303. Acesso em: 03 out. 2024.
APA
Justo Filho, J. F., Fazzio, A., & Antonelli, A. (2000). Dislocation core reconstruction in zinc-blende semiconductors. Journal of Physics-Condensed Matter, 12( 49), 10039-10044. doi:10.1088/0953-8984/12/49/303
NLM
Justo Filho JF, Fazzio A, Antonelli A. Dislocation core reconstruction in zinc-blende semiconductors [Internet]. Journal of Physics-Condensed Matter. 2000 ; 12( 49): 10039-10044.[citado 2024 out. 03 ] Available from: https://doi.org/10.1088/0953-8984/12/49/303
Vancouver
Justo Filho JF, Fazzio A, Antonelli A. Dislocation core reconstruction in zinc-blende semiconductors [Internet]. Journal of Physics-Condensed Matter. 2000 ; 12( 49): 10039-10044.[citado 2024 out. 03 ] Available from: https://doi.org/10.1088/0953-8984/12/49/303
Artigo de periodico
Effects of extended defects on the properties of intrinsic and extrinsic point defects in silicon (1999)
Justo Filho, João Francisco ; Antonelli, Alex; Schmidt, T. M.; Fazzio, Adalberto
Source: Physica B. Unidade: IF
Assunto: FÍSICA
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ABNT
JUSTO FILHO, João Francisco et al. Effects of extended defects on the properties of intrinsic and extrinsic point defects in silicon. Physica B, v. 274, p. 473-475, 1999Tradução . . Disponível em: https://doi.org/10.1016/s0921-4526(99)00528-1. Acesso em: 03 out. 2024.
APA
Justo Filho, J. F., Antonelli, A., Schmidt, T. M., & Fazzio, A. (1999). Effects of extended defects on the properties of intrinsic and extrinsic point defects in silicon. Physica B, 274, 473-475. doi:10.1016/s0921-4526(99)00528-1
NLM
Justo Filho JF, Antonelli A, Schmidt TM, Fazzio A. Effects of extended defects on the properties of intrinsic and extrinsic point defects in silicon [Internet]. Physica B. 1999 ; 274 473-475.[citado 2024 out. 03 ] Available from: https://doi.org/10.1016/s0921-4526(99)00528-1
Vancouver
Justo Filho JF, Antonelli A, Schmidt TM, Fazzio A. Effects of extended defects on the properties of intrinsic and extrinsic point defects in silicon [Internet]. Physica B. 1999 ; 274 473-475.[citado 2024 out. 03 ] Available from: https://doi.org/10.1016/s0921-4526(99)00528-1

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