Fonte: Physical Review B. Unidade: IF
Assuntos: SEMICONDUTORES, SPINTRÔNICA
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ABNT
LUENGO-KOVAC, M et al. Gate control of the spin mobility through the modification of the spin-orbit interaction in two-dimensional systems. Physical Review B, v. 95, n. 24, p. 245315/1-245315/6, 2017Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.95.245315. Acesso em: 23 jul. 2024.APA
Luengo-Kovac, M., Moraes, F. C. D. de, Ferreira Junior, G., Ribeiro, A. S. L., Gusev, G. M., Bakarov, A. K., et al. (2017). Gate control of the spin mobility through the modification of the spin-orbit interaction in two-dimensional systems. Physical Review B, 95( 24), 245315/1-245315/6. doi:10.1103/PhysRevB.95.245315NLM
Luengo-Kovac M, Moraes FCD de, Ferreira Junior G, Ribeiro ASL, Gusev GM, Bakarov AK, Sih V, Gonzalez Hernandez FG. Gate control of the spin mobility through the modification of the spin-orbit interaction in two-dimensional systems [Internet]. Physical Review B. 2017 ; 95( 24): 245315/1-245315/6.[citado 2024 jul. 23 ] Available from: https://doi.org/10.1103/PhysRevB.95.245315Vancouver
Luengo-Kovac M, Moraes FCD de, Ferreira Junior G, Ribeiro ASL, Gusev GM, Bakarov AK, Sih V, Gonzalez Hernandez FG. Gate control of the spin mobility through the modification of the spin-orbit interaction in two-dimensional systems [Internet]. Physical Review B. 2017 ; 95( 24): 245315/1-245315/6.[citado 2024 jul. 23 ] Available from: https://doi.org/10.1103/PhysRevB.95.245315
