ReP USP - Resultado da busca

Trabalho de evento-resumo
The effect of the temperature on the interaction between InAs quantum dot excitons with surface plasmon polaritons (2016)
Marega Júnior, Euclydes; Sobreira, F. W. A.; Oliveira, E. R. Cardozo; Marques, G. E.; Teodoro, M. D.
Fonte: Scientific Program. Nome do evento: International Conference on the Physics of Semiconductors - ICPS. Unidade: IFSC
Assuntos: POÇOS QUÂNTICOS, SEMICONDUTORES, CAMPO MAGNÉTICO
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ABNT
MAREGA JÚNIOR, Euclydes et al. The effect of the temperature on the interaction between InAs quantum dot excitons with surface plasmon polaritons. 2016, Anais.. Singapore: International Union of Pure and Applied Physics - IUPAP, 2016. Disponível em: http://www.icps2016.org/Abstracts/Tu-P.239.pdf. Acesso em: 06 jul. 2024.
APA
Marega Júnior, E., Sobreira, F. W. A., Oliveira, E. R. C., Marques, G. E., & Teodoro, M. D. (2016). The effect of the temperature on the interaction between InAs quantum dot excitons with surface plasmon polaritons. In Scientific Program. Singapore: International Union of Pure and Applied Physics - IUPAP. Recuperado de http://www.icps2016.org/Abstracts/Tu-P.239.pdf
NLM
Marega Júnior E, Sobreira FWA, Oliveira ERC, Marques GE, Teodoro MD. The effect of the temperature on the interaction between InAs quantum dot excitons with surface plasmon polaritons [Internet]. Scientific Program. 2016 ;[citado 2024 jul. 06 ] Available from: http://www.icps2016.org/Abstracts/Tu-P.239.pdf
Vancouver
Marega Júnior E, Sobreira FWA, Oliveira ERC, Marques GE, Teodoro MD. The effect of the temperature on the interaction between InAs quantum dot excitons with surface plasmon polaritons [Internet]. Scientific Program. 2016 ;[citado 2024 jul. 06 ] Available from: http://www.icps2016.org/Abstracts/Tu-P.239.pdf
Trabalho de evento-resumo
Electrical spin protection and manipulation via gate-locked spin-orbit fields (2014)
Weigele, P. J.; Dettwiler, F.; Fu, J.; Mack, S.; Egues, José Carlos; Awschalom, D. D.; Zumbühl, D. M.
Fonte: Abstracts Book. Nome do evento: International Conference on Low Temperature Physics. Unidade: IFSC
Assuntos: SPIN, SEMICONDUTORES
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ABNT
WEIGELE, P. J. et al. Electrical spin protection and manipulation via gate-locked spin-orbit fields. 2014, Anais.. London: International Union of Pure and Applied Physics - IUPAP, 2014. Disponível em: http://lt27.df.uba.ar/images/pdfs/bookOfAbstracts.pdf. Acesso em: 06 jul. 2024.
APA
Weigele, P. J., Dettwiler, F., Fu, J., Mack, S., Egues, J. C., Awschalom, D. D., & Zumbühl, D. M. (2014). Electrical spin protection and manipulation via gate-locked spin-orbit fields. In Abstracts Book. London: International Union of Pure and Applied Physics - IUPAP. Recuperado de http://lt27.df.uba.ar/images/pdfs/bookOfAbstracts.pdf
NLM
Weigele PJ, Dettwiler F, Fu J, Mack S, Egues JC, Awschalom DD, Zumbühl DM. Electrical spin protection and manipulation via gate-locked spin-orbit fields [Internet]. Abstracts Book. 2014 ;[citado 2024 jul. 06 ] Available from: http://lt27.df.uba.ar/images/pdfs/bookOfAbstracts.pdf
Vancouver
Weigele PJ, Dettwiler F, Fu J, Mack S, Egues JC, Awschalom DD, Zumbühl DM. Electrical spin protection and manipulation via gate-locked spin-orbit fields [Internet]. Abstracts Book. 2014 ;[citado 2024 jul. 06 ] Available from: http://lt27.df.uba.ar/images/pdfs/bookOfAbstracts.pdf
Trabalho de evento-resumo
Photoluminescence of radial heterostructured GaAs/AIGaAs/GaAs nanowires (2014)
Pusep, Yuri A.; Guimarães, Francisco Eduardo Gontijo; Caface, Raphael; Arakaki, Haroldo; Souza, Carlos Alberto de
Fonte: Abstracts. Nome do evento: International Conference on the Physics of Semiconductors - ICPS. Unidade: IFSC
Assuntos: FOTOLUMINESCÊNCIA, SEMICONDUTORES
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ABNT
PUSEP, Yuri A. et al. Photoluminescence of radial heterostructured GaAs/AIGaAs/GaAs nanowires. 2014, Anais.. London: International Union of Pure and Applied Physics - IUPAP, 2014. Disponível em: http://www.icps2014.org/abstracts/Posters_Optical_Properties_of_Heterostructures_B.pdf. Acesso em: 06 jul. 2024.
APA
Pusep, Y. A., Guimarães, F. E. G., Caface, R., Arakaki, H., & Souza, C. A. de. (2014). Photoluminescence of radial heterostructured GaAs/AIGaAs/GaAs nanowires. In Abstracts. London: International Union of Pure and Applied Physics - IUPAP. Recuperado de http://www.icps2014.org/abstracts/Posters_Optical_Properties_of_Heterostructures_B.pdf
NLM
Pusep YA, Guimarães FEG, Caface R, Arakaki H, Souza CA de. Photoluminescence of radial heterostructured GaAs/AIGaAs/GaAs nanowires [Internet]. Abstracts. 2014 ;[citado 2024 jul. 06 ] Available from: http://www.icps2014.org/abstracts/Posters_Optical_Properties_of_Heterostructures_B.pdf
Vancouver
Pusep YA, Guimarães FEG, Caface R, Arakaki H, Souza CA de. Photoluminescence of radial heterostructured GaAs/AIGaAs/GaAs nanowires [Internet]. Abstracts. 2014 ;[citado 2024 jul. 06 ] Available from: http://www.icps2014.org/abstracts/Posters_Optical_Properties_of_Heterostructures_B.pdf
Trabalho de evento-resumo
Formation of InAs quantum dots on a pre-patterned GaAs surfaces prepared with a Ga+ focused ion beam (2014)
Sobreira, Fernando Wellysson de Alencar; Arakaki, Haroldo; Souza, Carlos Alberto de; Marega Junior, Euclydes
Fonte: Abstracts. Nome do evento: International Conference on the Physics of Semiconductors - ICPS. Unidade: IFSC
Assuntos: POÇOS QUÂNTICOS, SEMICONDUTORES
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ABNT
SOBREIRA, Fernando Wellysson de Alencar et al. Formation of InAs quantum dots on a pre-patterned GaAs surfaces prepared with a Ga+ focused ion beam. 2014, Anais.. London: International Union of Pure and Applied Physics - IUPAP, 2014. Disponível em: http://www.icps2014.org/abstracts/Posters_Material_Structure.pdf. Acesso em: 06 jul. 2024.
APA
Sobreira, F. W. de A., Arakaki, H., Souza, C. A. de, & Marega Junior, E. (2014). Formation of InAs quantum dots on a pre-patterned GaAs surfaces prepared with a Ga+ focused ion beam. In Abstracts. London: International Union of Pure and Applied Physics - IUPAP. Recuperado de http://www.icps2014.org/abstracts/Posters_Material_Structure.pdf
NLM
Sobreira FW de A, Arakaki H, Souza CA de, Marega Junior E. Formation of InAs quantum dots on a pre-patterned GaAs surfaces prepared with a Ga+ focused ion beam [Internet]. Abstracts. 2014 ;[citado 2024 jul. 06 ] Available from: http://www.icps2014.org/abstracts/Posters_Material_Structure.pdf
Vancouver
Sobreira FW de A, Arakaki H, Souza CA de, Marega Junior E. Formation of InAs quantum dots on a pre-patterned GaAs surfaces prepared with a Ga+ focused ion beam [Internet]. Abstracts. 2014 ;[citado 2024 jul. 06 ] Available from: http://www.icps2014.org/abstracts/Posters_Material_Structure.pdf
Trabalho de evento-resumo
Valence band spin-splitting detuning with tilting magnetic field in multiple quantum wells (2014)
Pusep, Yuri A.; Santos, Lara Fernandes dos; Castelano, Leonardo K.; Padilha, Johnni X.; Lopez-Richard, Victor; Marques, Gilmar E.; Smirnov, Dmitry; Bakarov, A. K.; Toropov, A. I.
Fonte: Abstracts. Nome do evento: International Conference on the Physics of Semiconductors - ICPS. Unidade: IFSC
Assuntos: POÇOS QUÂNTICOS, SEMICONDUTORES
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ABNT
PUSEP, Yuri A. et al. Valence band spin-splitting detuning with tilting magnetic field in multiple quantum wells. 2014, Anais.. London: International Union of Pure and Applied Physics - IUPAP, 2014. Disponível em: http://www.icps2014.org/abstracts/Posters_Spintronics_Spin_Phenomena.pdf. Acesso em: 06 jul. 2024.
APA
Pusep, Y. A., Santos, L. F. dos, Castelano, L. K., Padilha, J. X., Lopez-Richard, V., Marques, G. E., et al. (2014). Valence band spin-splitting detuning with tilting magnetic field in multiple quantum wells. In Abstracts. London: International Union of Pure and Applied Physics - IUPAP. Recuperado de http://www.icps2014.org/abstracts/Posters_Spintronics_Spin_Phenomena.pdf
NLM
Pusep YA, Santos LF dos, Castelano LK, Padilha JX, Lopez-Richard V, Marques GE, Smirnov D, Bakarov AK, Toropov AI. Valence band spin-splitting detuning with tilting magnetic field in multiple quantum wells [Internet]. Abstracts. 2014 ;[citado 2024 jul. 06 ] Available from: http://www.icps2014.org/abstracts/Posters_Spintronics_Spin_Phenomena.pdf
Vancouver
Pusep YA, Santos LF dos, Castelano LK, Padilha JX, Lopez-Richard V, Marques GE, Smirnov D, Bakarov AK, Toropov AI. Valence band spin-splitting detuning with tilting magnetic field in multiple quantum wells [Internet]. Abstracts. 2014 ;[citado 2024 jul. 06 ] Available from: http://www.icps2014.org/abstracts/Posters_Spintronics_Spin_Phenomena.pdf
Trabalho de evento-resumo
Evidence of quantum hall gap collapse caused by tilted magnetic field in photoluminescence spectra of a GaAs/AlGaAs triple quantum well (2014)
Pusep, Yuri A.; Santos, Lara Fernandes dos; Barbosa, Brenno; Gusev, Guennadii Michailovich; Ludwig, J.; Smirnov, Dmitry; Bakarov, Ashat
Fonte: Abstracts. Nome do evento: International Conference on the Physics of Semiconductors - ICPS. Unidades: IFSC, IF
Assuntos: POÇOS QUÂNTICOS, FOTOLUMINESCÊNCIA, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PUSEP, Yuri A. et al. Evidence of quantum hall gap collapse caused by tilted magnetic field in photoluminescence spectra of a GaAs/AlGaAs triple quantum well. 2014, Anais.. London: International Union of Pure and Applied Physics - IUPAP, 2014. Disponível em: http://www.icps2014.org/abstracts/Posters_Quantum_Hall_Effects.pdf. Acesso em: 06 jul. 2024.
APA
Pusep, Y. A., Santos, L. F. dos, Barbosa, B., Gusev, G. M., Ludwig, J., Smirnov, D., & Bakarov, A. (2014). Evidence of quantum hall gap collapse caused by tilted magnetic field in photoluminescence spectra of a GaAs/AlGaAs triple quantum well. In Abstracts. London: International Union of Pure and Applied Physics - IUPAP. Recuperado de http://www.icps2014.org/abstracts/Posters_Quantum_Hall_Effects.pdf
NLM
Pusep YA, Santos LF dos, Barbosa B, Gusev GM, Ludwig J, Smirnov D, Bakarov A. Evidence of quantum hall gap collapse caused by tilted magnetic field in photoluminescence spectra of a GaAs/AlGaAs triple quantum well [Internet]. Abstracts. 2014 ;[citado 2024 jul. 06 ] Available from: http://www.icps2014.org/abstracts/Posters_Quantum_Hall_Effects.pdf
Vancouver
Pusep YA, Santos LF dos, Barbosa B, Gusev GM, Ludwig J, Smirnov D, Bakarov A. Evidence of quantum hall gap collapse caused by tilted magnetic field in photoluminescence spectra of a GaAs/AlGaAs triple quantum well [Internet]. Abstracts. 2014 ;[citado 2024 jul. 06 ] Available from: http://www.icps2014.org/abstracts/Posters_Quantum_Hall_Effects.pdf
Trabalho de evento-resumo
Study of Mn incorporation in InAs quantum dots fabricated by low-temperature molecular beam epitaxy (2014)
Ferri, Fabio Aparecido; Benamara, Mourad; Salamo, Gregoty; Teodoro, Marcio; Marega Júnior, Euclydes
Fonte: Abstracts. Nome do evento: International Conference on the Physics of Semiconductors - ICPS. Unidade: IFSC
Assuntos: POÇOS QUÂNTICOS, SEMICONDUTORES
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ABNT
FERRI, Fabio Aparecido et al. Study of Mn incorporation in InAs quantum dots fabricated by low-temperature molecular beam epitaxy. 2014, Anais.. London: International Union of Pure and Applied Physics - IUPAP, 2014. Disponível em: http://www.icps2014.org/abstracts/Posters_Optical_Properties_of_Heterostructures_A.pdf. Acesso em: 06 jul. 2024.
APA
Ferri, F. A., Benamara, M., Salamo, G., Teodoro, M., & Marega Júnior, E. (2014). Study of Mn incorporation in InAs quantum dots fabricated by low-temperature molecular beam epitaxy. In Abstracts. London: International Union of Pure and Applied Physics - IUPAP. Recuperado de http://www.icps2014.org/abstracts/Posters_Optical_Properties_of_Heterostructures_A.pdf
NLM
Ferri FA, Benamara M, Salamo G, Teodoro M, Marega Júnior E. Study of Mn incorporation in InAs quantum dots fabricated by low-temperature molecular beam epitaxy [Internet]. Abstracts. 2014 ;[citado 2024 jul. 06 ] Available from: http://www.icps2014.org/abstracts/Posters_Optical_Properties_of_Heterostructures_A.pdf
Vancouver
Ferri FA, Benamara M, Salamo G, Teodoro M, Marega Júnior E. Study of Mn incorporation in InAs quantum dots fabricated by low-temperature molecular beam epitaxy [Internet]. Abstracts. 2014 ;[citado 2024 jul. 06 ] Available from: http://www.icps2014.org/abstracts/Posters_Optical_Properties_of_Heterostructures_A.pdf
Trabalho de evento-resumo
Universality and conduction in nanostructured devices (2009)
Oliveira, Luiz Nunes de; Seridonio, A. C.; Yoshida, M.
Fonte: Program and Abstracts. Nome do evento: International Conference on Magnetism - ICM. Unidade: IFSC
Assuntos: FÍSICA TEÓRICA, NANOTECNOLOGIA, SEMICONDUTORES, POÇOS QUÂNTICOS
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ABNT
OLIVEIRA, Luiz Nunes de e SERIDONIO, A. C. e YOSHIDA, M. Universality and conduction in nanostructured devices. 2009, Anais.. London: International Union of Pure and Applied Physics - IUPAP, 2009. . Acesso em: 06 jul. 2024.
APA
Oliveira, L. N. de, Seridonio, A. C., & Yoshida, M. (2009). Universality and conduction in nanostructured devices. In Program and Abstracts. London: International Union of Pure and Applied Physics - IUPAP.
NLM
Oliveira LN de, Seridonio AC, Yoshida M. Universality and conduction in nanostructured devices. Program and Abstracts. 2009 ;[citado 2024 jul. 06 ]
Vancouver
Oliveira LN de, Seridonio AC, Yoshida M. Universality and conduction in nanostructured devices. Program and Abstracts. 2009 ;[citado 2024 jul. 06 ]

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