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Filtros : "SEMICONDUTORES" "Financiado pela ANP" "IQSC" Removidos: "Química analitica" "Universidade Federal de Ouro Preto (UFOP)" "IQSC-SVLABDI-75" "MEDINA, DEYBER ARLEY VARGAS" Limpar

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  • Artigo de periodico

    Ab initio investigation of the role of charge transfer in the adsorption properties of H2, N2, O2, CO, NO, CO2, NO2, and CH4 on the van derWaals layered Sn3O4 semiconductor (2020)

    Freire, Rafael L. H. ; Marcelo O. Orlandi ; Silva, Juarez Lopes Ferreira da

    Source: Physical Review Materials. Unidade: IQSC

    Subjects: FÍSICO-QUÍMICA, SEMICONDUTORES

    PrivadoAcesso à fonteDOIHow to cite
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    • ABNT

      FREIRE, Rafael L. H. e MARCELO O. ORLANDI, e SILVA, Juarez Lopes Ferreira da. Ab initio investigation of the role of charge transfer in the adsorption properties of H2, N2, O2, CO, NO, CO2, NO2, and CH4 on the van derWaals layered Sn3O4 semiconductor. Physical Review Materials, v. 4, n. 10, p. 104002, 2020Tradução . . Disponível em: https://doi.org/10.1103/PhysRevMaterials.4.104002. Acesso em: 09 nov. 2024.

    • APA

      Freire, R. L. H., Marcelo O. Orlandi,, & Silva, J. L. F. da. (2020). Ab initio investigation of the role of charge transfer in the adsorption properties of H2, N2, O2, CO, NO, CO2, NO2, and CH4 on the van derWaals layered Sn3O4 semiconductor. Physical Review Materials, 4( 10), 104002. doi:10.1103/PhysRevMaterials.4.104002

    • NLM

      Freire RLH, Marcelo O. Orlandi, Silva JLF da. Ab initio investigation of the role of charge transfer in the adsorption properties of H2, N2, O2, CO, NO, CO2, NO2, and CH4 on the van derWaals layered Sn3O4 semiconductor [Internet]. Physical Review Materials. 2020 ; 4( 10): 104002.[citado 2024 nov. 09 ] Available from: https://doi.org/10.1103/PhysRevMaterials.4.104002

    • Vancouver

      Freire RLH, Marcelo O. Orlandi, Silva JLF da. Ab initio investigation of the role of charge transfer in the adsorption properties of H2, N2, O2, CO, NO, CO2, NO2, and CH4 on the van derWaals layered Sn3O4 semiconductor [Internet]. Physical Review Materials. 2020 ; 4( 10): 104002.[citado 2024 nov. 09 ] Available from: https://doi.org/10.1103/PhysRevMaterials.4.104002

  • Artigo de periodico

    First-principles exploration of two-dimensional transition metal dichalcogenides based on Fe, Co, Ni, and Cu groups and their van der Waals heterostructures (2019)

    Besse, Rafael ; Lima, Matheus P. ; Silva, Juarez Lopes Ferreira da

    Source: ACS Applied Energy Materials. Unidades: IQSC, IFSC

    Subjects: SEMICONDUTORES, CALCOGÊNIOS

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    • ABNT

      BESSE, Rafael e LIMA, Matheus P. e SILVA, Juarez Lopes Ferreira da. First-principles exploration of two-dimensional transition metal dichalcogenides based on Fe, Co, Ni, and Cu groups and their van der Waals heterostructures. ACS Applied Energy Materials, v. 2, n. 12, p. 8491-8501, 2019Tradução . . Disponível em: https://doi.org/10.1021/acsaem.9b01433. Acesso em: 09 nov. 2024.

    • APA

      Besse, R., Lima, M. P., & Silva, J. L. F. da. (2019). First-principles exploration of two-dimensional transition metal dichalcogenides based on Fe, Co, Ni, and Cu groups and their van der Waals heterostructures. ACS Applied Energy Materials, 2( 12), 8491-8501. doi:10.1021/acsaem.9b01433

    • NLM

      Besse R, Lima MP, Silva JLF da. First-principles exploration of two-dimensional transition metal dichalcogenides based on Fe, Co, Ni, and Cu groups and their van der Waals heterostructures [Internet]. ACS Applied Energy Materials. 2019 ; 2( 12): 8491-8501.[citado 2024 nov. 09 ] Available from: https://doi.org/10.1021/acsaem.9b01433

    • Vancouver

      Besse R, Lima MP, Silva JLF da. First-principles exploration of two-dimensional transition metal dichalcogenides based on Fe, Co, Ni, and Cu groups and their van der Waals heterostructures [Internet]. ACS Applied Energy Materials. 2019 ; 2( 12): 8491-8501.[citado 2024 nov. 09 ] Available from: https://doi.org/10.1021/acsaem.9b01433
  • 1

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