Fonte: Radiation Effects & Defects in Solids. Unidade: IFSC
Assuntos: SEMICONDUTORES, MATÉRIA CONDENSADA, MATÉRIA CONDENSADA
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MESSIAS, Fábio Rogério et al. Photodesorption and electron trapping in N-type Sn'O IND.2' thin films grown by dip-coating technique. Radiation Effects & Defects in Solids, v. 146, p. 199-206, 1998Tradução . . Acesso em: 18 jun. 2024.APA
Messias, F. R., Scalvi, L. V. de A., Siu Li, M., Santilli, C. V., & Pulcinelli, S. H. (1998). Photodesorption and electron trapping in N-type Sn'O IND.2' thin films grown by dip-coating technique. Radiation Effects & Defects in Solids, 146, 199-206.NLM
Messias FR, Scalvi LV de A, Siu Li M, Santilli CV, Pulcinelli SH. Photodesorption and electron trapping in N-type Sn'O IND.2' thin films grown by dip-coating technique. Radiation Effects & Defects in Solids. 1998 ; 146 199-206.[citado 2024 jun. 18 ]Vancouver
Messias FR, Scalvi LV de A, Siu Li M, Santilli CV, Pulcinelli SH. Photodesorption and electron trapping in N-type Sn'O IND.2' thin films grown by dip-coating technique. Radiation Effects & Defects in Solids. 1998 ; 146 199-206.[citado 2024 jun. 18 ]
