Source: Journal of Applied Physics. Unidade: IF
Subjects: SEMICONDUTORES (FÍSICO-QUÍMICA), MAGNETOQUÍMICA
ABNT
SILVA, A. Ferreira da et al. Heavily n-doped Ge: Low-temperature magnetoresistance properties on the metallic side of the metal–nonmetal transition. Journal of Applied Physics, v. 127, n. 4, 2020Tradução . . Disponível em: https://doi.org/10.1063/1.5125882. Acesso em: 10 nov. 2024.APA
Silva, A. F. da, Sandoval, M. A. T., Levine, A., Levinson, E., Boudinov, H., & Sernelius, B. E. (2020). Heavily n-doped Ge: Low-temperature magnetoresistance properties on the metallic side of the metal–nonmetal transition. Journal of Applied Physics, 127( 4). doi:10.1063/1.5125882NLM
Silva AF da, Sandoval MAT, Levine A, Levinson E, Boudinov H, Sernelius BE. Heavily n-doped Ge: Low-temperature magnetoresistance properties on the metallic side of the metal–nonmetal transition [Internet]. Journal of Applied Physics. 2020 ; 127( 4):[citado 2024 nov. 10 ] Available from: https://doi.org/10.1063/1.5125882Vancouver
Silva AF da, Sandoval MAT, Levine A, Levinson E, Boudinov H, Sernelius BE. Heavily n-doped Ge: Low-temperature magnetoresistance properties on the metallic side of the metal–nonmetal transition [Internet]. Journal of Applied Physics. 2020 ; 127( 4):[citado 2024 nov. 10 ] Available from: https://doi.org/10.1063/1.5125882