Source: Abstracts. Conference titles: Electrochemical Society Meeting (ECS). Unidade: FFCLRP
Subjects: ÍONS, FÍSICO-QUÍMICA
ABNT
NASCIMENTO, R. A. S. e MULATO, Marcelo. Critical analysis of ion detection using semiconductor field effect devices: consequences for chemical and biomedical applications. 2011, Anais.. Montreal: Faculdade de Filosofia, Ciências e Letras de Ribeirão Preto, Universidade de São Paulo, 2011. . Acesso em: 11 set. 2024.APA
Nascimento, R. A. S., & Mulato, M. (2011). Critical analysis of ion detection using semiconductor field effect devices: consequences for chemical and biomedical applications. In Abstracts. Montreal: Faculdade de Filosofia, Ciências e Letras de Ribeirão Preto, Universidade de São Paulo.NLM
Nascimento RAS, Mulato M. Critical analysis of ion detection using semiconductor field effect devices: consequences for chemical and biomedical applications. Abstracts. 2011 ;[citado 2024 set. 11 ]Vancouver
Nascimento RAS, Mulato M. Critical analysis of ion detection using semiconductor field effect devices: consequences for chemical and biomedical applications. Abstracts. 2011 ;[citado 2024 set. 11 ]