Mev ion beam induced index of refraction changes il layered 'GA''AS' / ai'GA''AS' waveguides (1996)
Fonte: Ion-Solid Interactions for Material Modification and Processing. Unidade: FFCLRP
Assunto: FÍSICA
ABNT
TAYLOR, T et al. Mev ion beam induced index of refraction changes il layered 'GA''AS' / ai'GA''AS' waveguides. Ion-Solid Interactions for Material Modification and Processing. Tradução . Pittsburg: Mrs, 1996. . . Acesso em: 01 out. 2024.APA
Taylor, T., Ila, D., Zimmerman, R. L., & Ashley, P. R. (1996). Mev ion beam induced index of refraction changes il layered 'GA''AS' / ai'GA''AS' waveguides. In Ion-Solid Interactions for Material Modification and Processing. Pittsburg: Mrs.NLM
Taylor T, Ila D, Zimmerman RL, Ashley PR. Mev ion beam induced index of refraction changes il layered 'GA''AS' / ai'GA''AS' waveguides. In: Ion-Solid Interactions for Material Modification and Processing. Pittsburg: Mrs; 1996. [citado 2024 out. 01 ]Vancouver
Taylor T, Ila D, Zimmerman RL, Ashley PR. Mev ion beam induced index of refraction changes il layered 'GA''AS' / ai'GA''AS' waveguides. In: Ion-Solid Interactions for Material Modification and Processing. Pittsburg: Mrs; 1996. [citado 2024 out. 01 ]