Crystallization, stress, and stress-relieve due to nickel in amorphous silicon thin films (2007)
Zanatta, Antonio Ricardo 
; Ferri, Fabio Aparecido
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: CRISTALIZAÇÃO, FILMES FINOS, SILICIO, EXPANSÃO DO CALOR
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ZANATTA, Antonio Ricardo e FERRI, Fabio Aparecido. Crystallization, stress, and stress-relieve due to nickel in amorphous silicon thin films. Journal of Applied Physics, v. 102, n. 4, p. 043509-1-043509-5, 2007Tradução . . Disponível em: https://doi.org/10.1063/1.2770823. Acesso em: 14 nov. 2024.APA
Zanatta, A. R., & Ferri, F. A. (2007). Crystallization, stress, and stress-relieve due to nickel in amorphous silicon thin films. Journal of Applied Physics, 102( 4), 043509-1-043509-5. doi:10.1063/1.2770823NLM
Zanatta AR, Ferri FA. Crystallization, stress, and stress-relieve due to nickel in amorphous silicon thin films [Internet]. Journal of Applied Physics. 2007 ; 102( 4): 043509-1-043509-5.[citado 2024 nov. 14 ] Available from: https://doi.org/10.1063/1.2770823Vancouver
Zanatta AR, Ferri FA. Crystallization, stress, and stress-relieve due to nickel in amorphous silicon thin films [Internet]. Journal of Applied Physics. 2007 ; 102( 4): 043509-1-043509-5.[citado 2024 nov. 14 ] Available from: https://doi.org/10.1063/1.2770823
