Filtros : "ESTRUTURA DOS MATERIAIS" "Physical Review B" Removidos: "Cosentino, Ivana Conte" "FOB-BAD" Limpar

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  • Source: Physical Review B. Unidade: IF

    Subjects: EFEITO HALL, ESTRUTURA DOS MATERIAIS, MATERIAIS NANOESTRUTURADOS

    Versão PublicadaAcesso à fonteDOIHow to cite
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    • ABNT

      RAICHEV, O. E. et al. Unconventional Hall effect near charge neutrality point in a two-dimensional electron-hole system. Physical Review B, v. 86, n. 15, p. 15532/01-15532/08, 2012Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.86.155320. Acesso em: 31 ago. 2024.
    • APA

      Raichev, O. E., Gusev, G. M., Olshanetsky, E. B., Kvon, Z. D., Mikhailov, N. N., Dvoretsky, S. A., & Portal, J. C. (2012). Unconventional Hall effect near charge neutrality point in a two-dimensional electron-hole system. Physical Review B, 86( 15), 15532/01-15532/08. doi:10.1103/PhysRevB.86.155320
    • NLM

      Raichev OE, Gusev GM, Olshanetsky EB, Kvon ZD, Mikhailov NN, Dvoretsky SA, Portal JC. Unconventional Hall effect near charge neutrality point in a two-dimensional electron-hole system [Internet]. Physical Review B. 2012 ;86( 15): 15532/01-15532/08.[citado 2024 ago. 31 ] Available from: https://doi.org/10.1103/PhysRevB.86.155320
    • Vancouver

      Raichev OE, Gusev GM, Olshanetsky EB, Kvon ZD, Mikhailov NN, Dvoretsky SA, Portal JC. Unconventional Hall effect near charge neutrality point in a two-dimensional electron-hole system [Internet]. Physical Review B. 2012 ;86( 15): 15532/01-15532/08.[citado 2024 ago. 31 ] Available from: https://doi.org/10.1103/PhysRevB.86.155320

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