Source: Physical Review B. Unidade: IF
Assunto: ELÉTRONS
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ALVES, J L A e LEITE, J. R. Self-consistent one-electron states of substitutional and interstitial 5d transition-atom impurities in silicon. Physical Review B, v. 34, n. 10, p. 7174-85, 1986Tradução . . Disponível em: https://doi.org/10.1103/physrevb.34.7174. Acesso em: 07 out. 2024.APA
Alves, J. L. A., & Leite, J. R. (1986). Self-consistent one-electron states of substitutional and interstitial 5d transition-atom impurities in silicon. Physical Review B, 34( 10), 7174-85. doi:10.1103/physrevb.34.7174NLM
Alves JLA, Leite JR. Self-consistent one-electron states of substitutional and interstitial 5d transition-atom impurities in silicon [Internet]. Physical Review B. 1986 ;34( 10): 7174-85.[citado 2024 out. 07 ] Available from: https://doi.org/10.1103/physrevb.34.7174Vancouver
Alves JLA, Leite JR. Self-consistent one-electron states of substitutional and interstitial 5d transition-atom impurities in silicon [Internet]. Physical Review B. 1986 ;34( 10): 7174-85.[citado 2024 out. 07 ] Available from: https://doi.org/10.1103/physrevb.34.7174
