Raichev, O. E.; Gusev, G M 
; Olshanetsky, E. B.; Kvon, Z. D.; Mikhailov, N. N.; Dvoretsky, S. A.; Portal, J. C.
Fonte: Physical Review B. Unidade: IF
Assuntos: EFEITO HALL, ESTRUTURA DOS MATERIAIS, MATERIAIS NANOESTRUTURADOS
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ABNT
RAICHEV, O. E. et al. Unconventional Hall effect near charge neutrality point in a two-dimensional electron-hole system. Physical Review B, v. 86, n. 15, p. 15532/01-15532/08, 2012Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.86.155320. Acesso em: 01 nov. 2024.APA
Raichev, O. E., Gusev, G. M., Olshanetsky, E. B., Kvon, Z. D., Mikhailov, N. N., Dvoretsky, S. A., & Portal, J. C. (2012). Unconventional Hall effect near charge neutrality point in a two-dimensional electron-hole system. Physical Review B, 86( 15), 15532/01-15532/08. doi:10.1103/PhysRevB.86.155320NLM
Raichev OE, Gusev GM, Olshanetsky EB, Kvon ZD, Mikhailov NN, Dvoretsky SA, Portal JC. Unconventional Hall effect near charge neutrality point in a two-dimensional electron-hole system [Internet]. Physical Review B. 2012 ;86( 15): 15532/01-15532/08.[citado 2024 nov. 01 ] Available from: https://doi.org/10.1103/PhysRevB.86.155320Vancouver
Raichev OE, Gusev GM, Olshanetsky EB, Kvon ZD, Mikhailov NN, Dvoretsky SA, Portal JC. Unconventional Hall effect near charge neutrality point in a two-dimensional electron-hole system [Internet]. Physical Review B. 2012 ;86( 15): 15532/01-15532/08.[citado 2024 nov. 01 ] Available from: https://doi.org/10.1103/PhysRevB.86.155320
