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Filtros : "DIELÉTRICOS" "Materials Research Society Symposium Proceedings" Limpar

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  • Trabalho de evento

    Doping of polyaniline by corona discharge (1998)

    Job, Aldo Eloizo; Giacometti, José Alberto; Mattoso, Luis Henrique Capparelli

    Source: Materials Research Society Symposium Proceedings. Conference titles: MRS Fall Meeting. Unidade: IFSC

    Subjects: DESCARGA ELÉTRICA, MATÉRIA CONDENSADA, DIELÉTRICOS

    Acesso à fonteDOIHow to cite
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    • ABNT

      JOB, Aldo Eloizo e GIACOMETTI, José Alberto e MATTOSO, Luis Henrique Capparelli. Doping of polyaniline by corona discharge. 1998, Anais.. Warrendale: Materials Research Society - MRS, 1998. Disponível em: https://doi.org/10.1557/PROC-488-879. Acesso em: 02 out. 2024.

    • APA

      Job, A. E., Giacometti, J. A., & Mattoso, L. H. C. (1998). Doping of polyaniline by corona discharge. In Materials Research Society Symposium Proceedings (Vol. 488). Warrendale: Materials Research Society - MRS. doi:10.1557/PROC-488-879

    • NLM

      Job AE, Giacometti JA, Mattoso LHC. Doping of polyaniline by corona discharge [Internet]. Materials Research Society Symposium Proceedings. 1998 ; 488[citado 2024 out. 02 ] Available from: https://doi.org/10.1557/PROC-488-879

    • Vancouver

      Job AE, Giacometti JA, Mattoso LHC. Doping of polyaniline by corona discharge [Internet]. Materials Research Society Symposium Proceedings. 1998 ; 488[citado 2024 out. 02 ] Available from: https://doi.org/10.1557/PROC-488-879

  • Trabalho de evento

    Quantum confinement effects on the dielectric constant of porous silicon (1993)

    Tsu, R.; Ioriatti Júnior, Lidério Citrângulo; Harvey, J. F.; Shen, H.; Lux, R. A.

    Source: Materials Research Society Symposium Proceedings. Conference titles: MRS Fall Meeting. Unidade: IFQSC

    Assunto: DIELÉTRICOS

    Acesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas

    • ABNT

      TSU, R. et al. Quantum confinement effects on the dielectric constant of porous silicon. 1993, Anais.. Pittsburgh: Materials Research Society - MRS, 1993. Disponível em: https://doi.org/10.1557/PROC-283-437. Acesso em: 02 out. 2024.

    • APA

      Tsu, R., Ioriatti Júnior, L. C., Harvey, J. F., Shen, H., & Lux, R. A. (1993). Quantum confinement effects on the dielectric constant of porous silicon. In Materials Research Society Symposium Proceedings (Vol. 283). Pittsburgh: Materials Research Society - MRS. doi:10.1557/PROC-283-437

    • NLM

      Tsu R, Ioriatti Júnior LC, Harvey JF, Shen H, Lux RA. Quantum confinement effects on the dielectric constant of porous silicon [Internet]. Materials Research Society Symposium Proceedings. 1993 ; 283[citado 2024 out. 02 ] Available from: https://doi.org/10.1557/PROC-283-437

    • Vancouver

      Tsu R, Ioriatti Júnior LC, Harvey JF, Shen H, Lux RA. Quantum confinement effects on the dielectric constant of porous silicon [Internet]. Materials Research Society Symposium Proceedings. 1993 ; 283[citado 2024 out. 02 ] Available from: https://doi.org/10.1557/PROC-283-437
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