Source: Journal of Physical Chemistry C. Unidade: IFSC
Subjects: FILMES FINOS, TRANSISTORES, DIELÉTRICOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MOTTI, Silvia G. et al. Probing device degradation and electric fields in polymeric field-effect transistors by SFG vibrational spectroscopy. Journal of Physical Chemistry C, v. 122, n. 19, p. 10450-10458, 2018Tradução . . Disponível em: https://doi.org/10.1021/acs.jpcc.8b01760. Acesso em: 22 ago. 2024.APA
Motti, S. G., Cardoso, L. S., Gomes, D. J. C., Faria, R. M., & Miranda, P. B. (2018). Probing device degradation and electric fields in polymeric field-effect transistors by SFG vibrational spectroscopy. Journal of Physical Chemistry C, 122( 19), 10450-10458. doi:10.1021/acs.jpcc.8b01760NLM
Motti SG, Cardoso LS, Gomes DJC, Faria RM, Miranda PB. Probing device degradation and electric fields in polymeric field-effect transistors by SFG vibrational spectroscopy [Internet]. Journal of Physical Chemistry C. 2018 ; 122( 19): 10450-10458.[citado 2024 ago. 22 ] Available from: https://doi.org/10.1021/acs.jpcc.8b01760Vancouver
Motti SG, Cardoso LS, Gomes DJC, Faria RM, Miranda PB. Probing device degradation and electric fields in polymeric field-effect transistors by SFG vibrational spectroscopy [Internet]. Journal of Physical Chemistry C. 2018 ; 122( 19): 10450-10458.[citado 2024 ago. 22 ] Available from: https://doi.org/10.1021/acs.jpcc.8b01760
