Electronic and structural properties of silicon-doped carbon nanotubes (2001)
Source: Physical Review B. Unidade: IF
Subjects: MATÉRIA CONDENSADA, CLUSTERS
ABNT
BAIERLE, Rogerio Jose et al. Electronic and structural properties of silicon-doped carbon nanotubes. Physical Review B, v. 64, n. 8, p. 5413/1-5413/4, 2001Tradução . . Disponível em: https://doi.org/10.1103/physrevb.64.085413. Acesso em: 17 nov. 2024.APA
Baierle, R. J., Fagan, S. B., Mota, R., Silva, A. J. R. da, & Fazzio, A. (2001). Electronic and structural properties of silicon-doped carbon nanotubes. Physical Review B, 64( 8), 5413/1-5413/4. doi:10.1103/physrevb.64.085413NLM
Baierle RJ, Fagan SB, Mota R, Silva AJR da, Fazzio A. Electronic and structural properties of silicon-doped carbon nanotubes [Internet]. Physical Review B. 2001 ; 64( 8): 5413/1-5413/4.[citado 2024 nov. 17 ] Available from: https://doi.org/10.1103/physrevb.64.085413Vancouver
Baierle RJ, Fagan SB, Mota R, Silva AJR da, Fazzio A. Electronic and structural properties of silicon-doped carbon nanotubes [Internet]. Physical Review B. 2001 ; 64( 8): 5413/1-5413/4.[citado 2024 nov. 17 ] Available from: https://doi.org/10.1103/physrevb.64.085413