Dynamics of Defects in van der Waals Epitaxy of Bismuth Telluride Topological Insulators (2019)
Morelhão, Sérgio L. 
; Kycia, Stefan W.; Netzke, Samuel; Fornari, Celso I.; Rappl, Paulo H. O.; Abramof, Eduardo
Source: The Journal of Physical Chemistry C. Unidade: IF
Subjects: RADIAÇÃO SINCROTRON, SEMICONDUTORES (FÍSICO-QUÍMICA), MATERIAIS NANOESTRUTURADOS, EPITAXIA POR FEIXE MOLECULAR, CRISTALOGRAFIA, BISMUTO
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MORELHÃO, Sérgio L. et al. Dynamics of Defects in van der Waals Epitaxy of Bismuth Telluride Topological Insulators. The Journal of Physical Chemistry C, v. 123, n. 40, p. 24818-24825, 2019Tradução . . Disponível em: https://doi-org.ez67.periodicos.capes.gov.br/10.1021/acs.jpcc.9b05377. Acesso em: 17 nov. 2024.APA
Morelhão, S. L., Kycia, S. W., Netzke, S., Fornari, C. I., Rappl, P. H. O., & Abramof, E. (2019). Dynamics of Defects in van der Waals Epitaxy of Bismuth Telluride Topological Insulators. The Journal of Physical Chemistry C, 123( 40), 24818-24825. doi:10.1021/acs.jpcc.9b05377NLM
Morelhão SL, Kycia SW, Netzke S, Fornari CI, Rappl PHO, Abramof E. Dynamics of Defects in van der Waals Epitaxy of Bismuth Telluride Topological Insulators [Internet]. The Journal of Physical Chemistry C. 2019 ; 123( 40): 24818-24825.[citado 2024 nov. 17 ] Available from: https://doi-org.ez67.periodicos.capes.gov.br/10.1021/acs.jpcc.9b05377Vancouver
Morelhão SL, Kycia SW, Netzke S, Fornari CI, Rappl PHO, Abramof E. Dynamics of Defects in van der Waals Epitaxy of Bismuth Telluride Topological Insulators [Internet]. The Journal of Physical Chemistry C. 2019 ; 123( 40): 24818-24825.[citado 2024 nov. 17 ] Available from: https://doi-org.ez67.periodicos.capes.gov.br/10.1021/acs.jpcc.9b05377
