Filtros : "ÓPTICA ELETRÔNICA" "Journal of Applied Physics" Removido: "Silva, H. Santos" Limpar

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  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: LASER, NANOPARTÍCULAS, SEMICONDUTORES, FILMES FINOS, ÓPTICA ELETRÔNICA

    Versão PublicadaAcesso à fonteDOIHow to cite
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    • ABNT

      PAULA, Kelly Tasso de et al. Fabrication of interdigitated electrodes of graphene oxide/silica by femtosecond laser-induced forward transfer for sensing applications. Journal of Applied Physics, v. 133, n. 5, p. 053103-1-053103-10, 2023Tradução . . Disponível em: https://doi.org/10.1063/5.0137926. Acesso em: 01 out. 2024.
    • APA

      Paula, K. T. de, Santos, S. N. C. dos, Facure, M. H. M., Araújo, F. L. de, Andrade, M. B. de, Corrêa, D. S., & Mendonça, C. R. (2023). Fabrication of interdigitated electrodes of graphene oxide/silica by femtosecond laser-induced forward transfer for sensing applications. Journal of Applied Physics, 133( 5), 053103-1-053103-10. doi:10.1063/5.0137926
    • NLM

      Paula KT de, Santos SNC dos, Facure MHM, Araújo FL de, Andrade MB de, Corrêa DS, Mendonça CR. Fabrication of interdigitated electrodes of graphene oxide/silica by femtosecond laser-induced forward transfer for sensing applications [Internet]. Journal of Applied Physics. 2023 ; 133( 5): 053103-1-053103-10.[citado 2024 out. 01 ] Available from: https://doi.org/10.1063/5.0137926
    • Vancouver

      Paula KT de, Santos SNC dos, Facure MHM, Araújo FL de, Andrade MB de, Corrêa DS, Mendonça CR. Fabrication of interdigitated electrodes of graphene oxide/silica by femtosecond laser-induced forward transfer for sensing applications [Internet]. Journal of Applied Physics. 2023 ; 133( 5): 053103-1-053103-10.[citado 2024 out. 01 ] Available from: https://doi.org/10.1063/5.0137926
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: POÇOS QUÂNTICOS, TEMPERATURA, ÓPTICA ELETRÔNICA

    Acesso à fonteDOIHow to cite
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    • ABNT

      MAZUR, Yu. I. et al. Effect of tunneling transfer on thermal redistribution of carriers in hybrid dot-well nanostructures. Journal of Applied Physics, v. 113, n. Ja 2013, p. 034309-1-034309-8, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4779686. Acesso em: 01 out. 2024.
    • APA

      Mazur, Y. I., Dorogan, V. G., Marega Júnior, E., Guzun, D., Ware, M. E., Zhuchenko, Z. Y., et al. (2013). Effect of tunneling transfer on thermal redistribution of carriers in hybrid dot-well nanostructures. Journal of Applied Physics, 113( Ja 2013), 034309-1-034309-8. doi:10.1063/1.4779686
    • NLM

      Mazur YI, Dorogan VG, Marega Júnior E, Guzun D, Ware ME, Zhuchenko ZY, Tarasov GG, Lienau C, Salamo GJ. Effect of tunneling transfer on thermal redistribution of carriers in hybrid dot-well nanostructures [Internet]. Journal of Applied Physics. 2013 ; 113( Ja 2013): 034309-1-034309-8.[citado 2024 out. 01 ] Available from: https://doi.org/10.1063/1.4779686
    • Vancouver

      Mazur YI, Dorogan VG, Marega Júnior E, Guzun D, Ware ME, Zhuchenko ZY, Tarasov GG, Lienau C, Salamo GJ. Effect of tunneling transfer on thermal redistribution of carriers in hybrid dot-well nanostructures [Internet]. Journal of Applied Physics. 2013 ; 113( Ja 2013): 034309-1-034309-8.[citado 2024 out. 01 ] Available from: https://doi.org/10.1063/1.4779686
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: MATERIAIS NANOESTRUTURADOS, POÇOS QUÂNTICOS, ÓPTICA ELETRÔNICA

    Acesso à fonteDOIHow to cite
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    • ABNT

      GUZUN, D. et al. Effect of resonant tunneling on exciton dynamics in coupled dot-well nanostructures. Journal of Applied Physics, v. 113, n. 15, p. 154304-1-154304-5, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4801891. Acesso em: 01 out. 2024.
    • APA

      Guzun, D., Mazur, Y. I., Dorogan, V. G., Ware, M. E., Marega Júnior, E., Tarasov, G. G., et al. (2013). Effect of resonant tunneling on exciton dynamics in coupled dot-well nanostructures. Journal of Applied Physics, 113( 15), 154304-1-154304-5. doi:10.1063/1.4801891
    • NLM

      Guzun D, Mazur YI, Dorogan VG, Ware ME, Marega Júnior E, Tarasov GG, Lienau C, Salamo GJ. Effect of resonant tunneling on exciton dynamics in coupled dot-well nanostructures [Internet]. Journal of Applied Physics. 2013 ; 113( 15): 154304-1-154304-5.[citado 2024 out. 01 ] Available from: https://doi.org/10.1063/1.4801891
    • Vancouver

      Guzun D, Mazur YI, Dorogan VG, Ware ME, Marega Júnior E, Tarasov GG, Lienau C, Salamo GJ. Effect of resonant tunneling on exciton dynamics in coupled dot-well nanostructures [Internet]. Journal of Applied Physics. 2013 ; 113( 15): 154304-1-154304-5.[citado 2024 out. 01 ] Available from: https://doi.org/10.1063/1.4801891
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: DIFRAÇÃO POR RAIOS X, ÓPTICA ELETRÔNICA, SEMICONDUTORES, FOTOLUMINESCÊNCIA

    Acesso à fonteDOIHow to cite
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    • ABNT

      CORNET, D. M. et al. High resolution x-ray diffraction analysis of InGaAs/InP superlattices. Journal of Applied Physics, v. 100, n. 4, p. 043518-1-043518-6, 2006Tradução . . Disponível em: https://doi.org/10.1063/1.2335689. Acesso em: 01 out. 2024.
    • APA

      Cornet, D. M., LaPierre, R. R., Comedi, D., & Pusep, Y. A. (2006). High resolution x-ray diffraction analysis of InGaAs/InP superlattices. Journal of Applied Physics, 100( 4), 043518-1-043518-6. doi:10.1063/1.2335689
    • NLM

      Cornet DM, LaPierre RR, Comedi D, Pusep YA. High resolution x-ray diffraction analysis of InGaAs/InP superlattices [Internet]. Journal of Applied Physics. 2006 ; 100( 4): 043518-1-043518-6.[citado 2024 out. 01 ] Available from: https://doi.org/10.1063/1.2335689
    • Vancouver

      Cornet DM, LaPierre RR, Comedi D, Pusep YA. High resolution x-ray diffraction analysis of InGaAs/InP superlattices [Internet]. Journal of Applied Physics. 2006 ; 100( 4): 043518-1-043518-6.[citado 2024 out. 01 ] Available from: https://doi.org/10.1063/1.2335689

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