Bellodi, Marcello; Martino, João Antonio 
Source: Electrochemical and Solid State Letters. Unidade: EP
Assunto: ELETROQUÍMICA
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BELLODI, Marcello e MARTINO, João Antonio. Leakage drain current behavior in an accumulation mode SOI p-channel MOSFET operating at high temperatures. Electrochemical and Solid State Letters, v. 2, n. 7, p. 345-346, 1999Tradução . . Disponível em: https://doi.org/10.1149/1.1390831. Acesso em: 20 jun. 2024.APA
Bellodi, M., & Martino, J. A. (1999). Leakage drain current behavior in an accumulation mode SOI p-channel MOSFET operating at high temperatures. Electrochemical and Solid State Letters, 2( 7), 345-346. doi:10.1149/1.1390831NLM
Bellodi M, Martino JA. Leakage drain current behavior in an accumulation mode SOI p-channel MOSFET operating at high temperatures [Internet]. Electrochemical and Solid State Letters. 1999 ; 2( 7): 345-346.[citado 2024 jun. 20 ] Available from: https://doi.org/10.1149/1.1390831Vancouver
Bellodi M, Martino JA. Leakage drain current behavior in an accumulation mode SOI p-channel MOSFET operating at high temperatures [Internet]. Electrochemical and Solid State Letters. 1999 ; 2( 7): 345-346.[citado 2024 jun. 20 ] Available from: https://doi.org/10.1149/1.1390831
