Raman study of the segregation of GaAs/AlAs heterostructures grown by molecular beam epitaxy (2001)
Zanelato, G; Pusep, Yuri A 
; Galzerani, J C; Lubyshev, D I; González-Borrero, Pedro Pablo
Fonte: Physica E. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
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ABNT
ZANELATO, G et al. Raman study of the segregation of GaAs/AlAs heterostructures grown by molecular beam epitaxy. Physica E, v. 10, n. 4, p. 587-592, 2001Tradução . . Disponível em: https://doi.org/10.1016/s1386-9477(00)00289-7. Acesso em: 04 out. 2024.APA
Zanelato, G., Pusep, Y. A., Galzerani, J. C., Lubyshev, D. I., & González-Borrero, P. P. (2001). Raman study of the segregation of GaAs/AlAs heterostructures grown by molecular beam epitaxy. Physica E, 10( 4), 587-592. doi:10.1016/s1386-9477(00)00289-7NLM
Zanelato G, Pusep YA, Galzerani JC, Lubyshev DI, González-Borrero PP. Raman study of the segregation of GaAs/AlAs heterostructures grown by molecular beam epitaxy [Internet]. Physica E. 2001 ;10( 4): 587-592.[citado 2024 out. 04 ] Available from: https://doi.org/10.1016/s1386-9477(00)00289-7Vancouver
Zanelato G, Pusep YA, Galzerani JC, Lubyshev DI, González-Borrero PP. Raman study of the segregation of GaAs/AlAs heterostructures grown by molecular beam epitaxy [Internet]. Physica E. 2001 ;10( 4): 587-592.[citado 2024 out. 04 ] Available from: https://doi.org/10.1016/s1386-9477(00)00289-7
