Source: Solid State Sciences. Unidade: FFCLRP
Subjects: FILMES FINOS, SEMICONDUTORES
ABNT
GUERRA, Elidia Maria e SILVA, Glaucio Ribeiro e MULATO, Marcelo. Extended gate field effect transistor using 'V IND.2''O IND.5' xerogel sensing membrane by sol-gel method. Solid State Sciences, v. 11, n. 2, p. 456-460, 2009Tradução . . Acesso em: 11 nov. 2024.APA
Guerra, E. M., Silva, G. R., & Mulato, M. (2009). Extended gate field effect transistor using 'V IND.2''O IND.5' xerogel sensing membrane by sol-gel method. Solid State Sciences, 11( 2), 456-460.NLM
Guerra EM, Silva GR, Mulato M. Extended gate field effect transistor using 'V IND.2''O IND.5' xerogel sensing membrane by sol-gel method. Solid State Sciences. 2009 ; 11( 2): 456-460.[citado 2024 nov. 11 ]Vancouver
Guerra EM, Silva GR, Mulato M. Extended gate field effect transistor using 'V IND.2''O IND.5' xerogel sensing membrane by sol-gel method. Solid State Sciences. 2009 ; 11( 2): 456-460.[citado 2024 nov. 11 ]