Salcedo, Walter Jaimes 
; Ramírez Fernandez, Francisco Javier ; Rubim, Joel Camargo
Source: Brazilian Journal of Physics. Unidades: EP, IQ
Assunto: DISPOSITIVOS ELETRÔNICOS
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ABNT
SALCEDO, Walter Jaimes e RAMÍREZ FERNANDEZ, Francisco Javier e RUBIM, Joel Camargo. Influence of layer excitation on Raman and photoluminescence spectra and FTIR study of porous silicon layers. Brazilian Journal of Physics, v. 29, n. 4, 1999Tradução . . Disponível em: https://doi.org/10.1590/s0103-97331999000400028. Acesso em: 18 nov. 2024.APA
Salcedo, W. J., Ramírez Fernandez, F. J., & Rubim, J. C. (1999). Influence of layer excitation on Raman and photoluminescence spectra and FTIR study of porous silicon layers. Brazilian Journal of Physics, 29( 4). doi:10.1590/s0103-97331999000400028NLM
Salcedo WJ, Ramírez Fernandez FJ, Rubim JC. Influence of layer excitation on Raman and photoluminescence spectra and FTIR study of porous silicon layers [Internet]. Brazilian Journal of Physics. 1999 ; 29( 4):[citado 2024 nov. 18 ] Available from: https://doi.org/10.1590/s0103-97331999000400028Vancouver
Salcedo WJ, Ramírez Fernandez FJ, Rubim JC. Influence of layer excitation on Raman and photoluminescence spectra and FTIR study of porous silicon layers [Internet]. Brazilian Journal of Physics. 1999 ; 29( 4):[citado 2024 nov. 18 ] Available from: https://doi.org/10.1590/s0103-97331999000400028
