ReP USP - Resultado da busca

Trabalho de evento-resumo
Ultrafast terahertz spectroscopy of gallium nitride thin films (2023)
Siqueira, Jonathas de Paula ; Cruz, Flávio Caldas da; Mendonça, Cleber Renato ; Voss, Tobias
Source: Program. Conference titles: Encontro de Outono da Sociedade Brasileira de Física - EOSBF. Unidade: IFSC
Subjects: GÁLIO, FILMES FINOS, ESPECTROSCOPIA
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ABNT
SIQUEIRA, Jonathas de Paula et al. Ultrafast terahertz spectroscopy of gallium nitride thin films. 2023, Anais.. São Paulo: Sociedade Brasileira de Física - SBF, 2023. Disponível em: https://sec.sbfisica.org.br/eventos/eosbf/2023/sys/resumos/R0969-3.pdf. Acesso em: 07 set. 2024.
APA
Siqueira, J. de P., Cruz, F. C. da, Mendonça, C. R., & Voss, T. (2023). Ultrafast terahertz spectroscopy of gallium nitride thin films. In Program. São Paulo: Sociedade Brasileira de Física - SBF. Recuperado de https://sec.sbfisica.org.br/eventos/eosbf/2023/sys/resumos/R0969-3.pdf
NLM
Siqueira J de P, Cruz FC da, Mendonça CR, Voss T. Ultrafast terahertz spectroscopy of gallium nitride thin films [Internet]. Program. 2023 ;[citado 2024 set. 07 ] Available from: https://sec.sbfisica.org.br/eventos/eosbf/2023/sys/resumos/R0969-3.pdf
Vancouver
Siqueira J de P, Cruz FC da, Mendonça CR, Voss T. Ultrafast terahertz spectroscopy of gallium nitride thin films [Internet]. Program. 2023 ;[citado 2024 set. 07 ] Available from: https://sec.sbfisica.org.br/eventos/eosbf/2023/sys/resumos/R0969-3.pdf
Artigo de periodico
Femtosecond laser micromachining of GaN using different wavelengths from near-infrared to ultraviolet (2021)
Nolasco, Lucas Konaka; Almeida, Gustavo Foresto Brito de; Voss, Tobias; Mendonça, Cleber Renato
Source: Journal of Alloys and Compounds. Unidades: IFSC, EESC
Subjects: ÓPTICA NÃO LINEAR, ÓPTICA, FILMES FINOS
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ABNT
NOLASCO, Lucas Konaka et al. Femtosecond laser micromachining of GaN using different wavelengths from near-infrared to ultraviolet. Journal of Alloys and Compounds, v. 877, p. 160259-1-160259-5, 2021Tradução . . Disponível em: https://doi.org/10.1016/j.jallcom.2021.160259. Acesso em: 07 set. 2024.
APA
Nolasco, L. K., Almeida, G. F. B. de, Voss, T., & Mendonça, C. R. (2021). Femtosecond laser micromachining of GaN using different wavelengths from near-infrared to ultraviolet. Journal of Alloys and Compounds, 877, 160259-1-160259-5. doi:10.1016/j.jallcom.2021.160259
NLM
Nolasco LK, Almeida GFB de, Voss T, Mendonça CR. Femtosecond laser micromachining of GaN using different wavelengths from near-infrared to ultraviolet [Internet]. Journal of Alloys and Compounds. 2021 ; 877 160259-1-160259-5.[citado 2024 set. 07 ] Available from: https://doi.org/10.1016/j.jallcom.2021.160259
Vancouver
Nolasco LK, Almeida GFB de, Voss T, Mendonça CR. Femtosecond laser micromachining of GaN using different wavelengths from near-infrared to ultraviolet [Internet]. Journal of Alloys and Compounds. 2021 ; 877 160259-1-160259-5.[citado 2024 set. 07 ] Available from: https://doi.org/10.1016/j.jallcom.2021.160259
Trabalho de evento-resumo
Two-photon absorption of GaN and Alx Ga1-x N thin films (2020)
Mendonça, Cleber Renato ; Manoel, Diego da Silva; Dipold, Jessica; Martins, Renato Juliano; Rodriguez, Ruben Dario Fonseca Rodriguez; Manglano-Clavero, Irene; Margenfeld, Christoph; Waag, Andreas; Voss, Tobias; Vivas, Marcelo Gonçalves
Source: Abstracts. Conference titles: Photonics West. Unidade: IFSC
Subjects: ÓPTICA NÃO LINEAR, FILMES FINOS, FOTÔNICA
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ABNT
MENDONÇA, Cleber Renato et al. Two-photon absorption of GaN and Alx Ga1-x N thin films. 2020, Anais.. Bellingham: International Society for Optical Engineering - SPIE, 2020. Disponível em: https://spie.org/PWO/conferencedetails/integrated-optics. Acesso em: 07 set. 2024.
APA
Mendonça, C. R., Manoel, D. da S., Dipold, J., Martins, R. J., Rodriguez, R. D. F. R., Manglano-Clavero, I., et al. (2020). Two-photon absorption of GaN and Alx Ga1-x N thin films. In Abstracts. Bellingham: International Society for Optical Engineering - SPIE. Recuperado de https://spie.org/PWO/conferencedetails/integrated-optics
NLM
Mendonça CR, Manoel D da S, Dipold J, Martins RJ, Rodriguez RDFR, Manglano-Clavero I, Margenfeld C, Waag A, Voss T, Vivas MG. Two-photon absorption of GaN and Alx Ga1-x N thin films [Internet]. Abstracts. 2020 ;[citado 2024 set. 07 ] Available from: https://spie.org/PWO/conferencedetails/integrated-optics
Vancouver
Mendonça CR, Manoel D da S, Dipold J, Martins RJ, Rodriguez RDFR, Manglano-Clavero I, Margenfeld C, Waag A, Voss T, Vivas MG. Two-photon absorption of GaN and Alx Ga1-x N thin films [Internet]. Abstracts. 2020 ;[citado 2024 set. 07 ] Available from: https://spie.org/PWO/conferencedetails/integrated-optics
Trabalho de evento-resumo
Incubation effect study of GaN films under ultrafast laser pulse micromachining (2020)
Almeida, Gustavo Foresto Brito de; Nolasco, Lucas Konaka; Barbosa, Gustavo Rocha; Schneider, Andreas; Jaros, Angelina; Manglano-Clavero, Irene; Margenfeld, Christoph; Waag, Andreas; Voss, Tobias; Mendonça, Cleber Renato
Source: Abstracts. Conference titles: Photonics West. Unidade: IFSC
Subjects: FOTÔNICA, LASER, PROCESSO SOL-GEL, CELULOSE
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ABNT
ALMEIDA, Gustavo Foresto Brito de et al. Incubation effect study of GaN films under ultrafast laser pulse micromachining. 2020, Anais.. Bellingham: International Society for Optical Engineering - SPIE, 2020. Disponível em: https://spie.org/PWL/conferencedetails/laser-micro-nanoprocessing#2541024. Acesso em: 07 set. 2024.
APA
Almeida, G. F. B. de, Nolasco, L. K., Barbosa, G. R., Schneider, A., Jaros, A., Manglano-Clavero, I., et al. (2020). Incubation effect study of GaN films under ultrafast laser pulse micromachining. In Abstracts. Bellingham: International Society for Optical Engineering - SPIE. Recuperado de https://spie.org/PWL/conferencedetails/laser-micro-nanoprocessing#2541024
NLM
Almeida GFB de, Nolasco LK, Barbosa GR, Schneider A, Jaros A, Manglano-Clavero I, Margenfeld C, Waag A, Voss T, Mendonça CR. Incubation effect study of GaN films under ultrafast laser pulse micromachining [Internet]. Abstracts. 2020 ;[citado 2024 set. 07 ] Available from: https://spie.org/PWL/conferencedetails/laser-micro-nanoprocessing#2541024
Vancouver
Almeida GFB de, Nolasco LK, Barbosa GR, Schneider A, Jaros A, Manglano-Clavero I, Margenfeld C, Waag A, Voss T, Mendonça CR. Incubation effect study of GaN films under ultrafast laser pulse micromachining [Internet]. Abstracts. 2020 ;[citado 2024 set. 07 ] Available from: https://spie.org/PWL/conferencedetails/laser-micro-nanoprocessing#2541024
Artigo de periodico
Incubation effect during laser micromachining of GaN films with femtosecond pulses (2019)
Almeida, Gustavo Foresto Brito de; Nolasco, Lucas Konaka; Barbosa, Gustavo Rocha; Schneider, A.; Jaros, A.; Clavero, I. Manglano; Margenfeld, C.; Waag, A.; Voss, T.; Mendonça, Cleber Renato
Source: Journal of Materials Science: materials in electronics. Unidade: IFSC
Subjects: FOTÔNICA, LASER, PROCESSO SOL-GEL, CELULOSE
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ABNT
ALMEIDA, Gustavo Foresto Brito de et al. Incubation effect during laser micromachining of GaN films with femtosecond pulses. Journal of Materials Science: materials in electronics, v. 30, n. 18, p. 16821-16826, 2019Tradução . . Disponível em: https://doi.org/10.1007/s10854-019-01373-2. Acesso em: 07 set. 2024.
APA
Almeida, G. F. B. de, Nolasco, L. K., Barbosa, G. R., Schneider, A., Jaros, A., Clavero, I. M., et al. (2019). Incubation effect during laser micromachining of GaN films with femtosecond pulses. Journal of Materials Science: materials in electronics, 30( 18), 16821-16826. doi:10.1007/s10854-019-01373-2
NLM
Almeida GFB de, Nolasco LK, Barbosa GR, Schneider A, Jaros A, Clavero IM, Margenfeld C, Waag A, Voss T, Mendonça CR. Incubation effect during laser micromachining of GaN films with femtosecond pulses [Internet]. Journal of Materials Science: materials in electronics. 2019 ; 30( 18): 16821-16826.[citado 2024 set. 07 ] Available from: https://doi.org/10.1007/s10854-019-01373-2
Vancouver
Almeida GFB de, Nolasco LK, Barbosa GR, Schneider A, Jaros A, Clavero IM, Margenfeld C, Waag A, Voss T, Mendonça CR. Incubation effect during laser micromachining of GaN films with femtosecond pulses [Internet]. Journal of Materials Science: materials in electronics. 2019 ; 30( 18): 16821-16826.[citado 2024 set. 07 ] Available from: https://doi.org/10.1007/s10854-019-01373-2
Trabalho de evento-resumo
Spectral third-order optical nonlinearities of gallium nitride (2019)
Almeida, Gustavo F. B.; Santos, Sabrina N. C.; Siqueira, Jonathas P.; Clavero, Irene M.; Margenfeld, Christoph; Fündling, Sönke; Vogt, Angelina M.; Waag, Andreas; Voss, Tobias; Mendonça, Cleber Renato
Source: Abstracts. Conference titles: Photonics West. Unidade: IFSC
Subjects: ÓPTICA NÃO LINEAR, GÁLIO, SEMICONDUTORES
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ABNT
ALMEIDA, Gustavo F. B. et al. Spectral third-order optical nonlinearities of gallium nitride. 2019, Anais.. Bellingham: International Society for Optical Engineering - SPIE, 2019. Disponível em: https://spie.org/PWO/conferencedetails/gallium-nitride-materials-and-devices. Acesso em: 07 set. 2024.
APA
Almeida, G. F. B., Santos, S. N. C., Siqueira, J. P., Clavero, I. M., Margenfeld, C., Fündling, S., et al. (2019). Spectral third-order optical nonlinearities of gallium nitride. In Abstracts. Bellingham: International Society for Optical Engineering - SPIE. Recuperado de https://spie.org/PWO/conferencedetails/gallium-nitride-materials-and-devices
NLM
Almeida GFB, Santos SNC, Siqueira JP, Clavero IM, Margenfeld C, Fündling S, Vogt AM, Waag A, Voss T, Mendonça CR. Spectral third-order optical nonlinearities of gallium nitride [Internet]. Abstracts. 2019 ;[citado 2024 set. 07 ] Available from: https://spie.org/PWO/conferencedetails/gallium-nitride-materials-and-devices
Vancouver
Almeida GFB, Santos SNC, Siqueira JP, Clavero IM, Margenfeld C, Fündling S, Vogt AM, Waag A, Voss T, Mendonça CR. Spectral third-order optical nonlinearities of gallium nitride [Internet]. Abstracts. 2019 ;[citado 2024 set. 07 ] Available from: https://spie.org/PWO/conferencedetails/gallium-nitride-materials-and-devices
Trabalho de evento-resumo
Determination of two photon absorption coefficients (β) in GaN and GaN-Al films (2018)
Manoel, Diego da Silva; Dipold, Jéssica; Voss, Tobias; Vivas, Marcelo G.; Mendonça, Cleber Renato
Source: Program. Conference titles: Brazilian MRS Meeting. Unidade: IFSC
Subjects: FOTÔNICA, NANOPARTÍCULAS
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ABNT
MANOEL, Diego da Silva et al. Determination of two photon absorption coefficients (β) in GaN and GaN-Al films. 2018, Anais.. Rio de Janeiro: Sociedade Brasileira de Pesquisa em Materiais - SBPMat, 2018. Disponível em: https://new.eventweb.com.br/xviisbpmat/specific-files/grabFile.php?codigo=4DS4. Acesso em: 07 set. 2024.
APA
Manoel, D. da S., Dipold, J., Voss, T., Vivas, M. G., & Mendonça, C. R. (2018). Determination of two photon absorption coefficients (β) in GaN and GaN-Al films. In Program. Rio de Janeiro: Sociedade Brasileira de Pesquisa em Materiais - SBPMat. Recuperado de https://new.eventweb.com.br/xviisbpmat/specific-files/grabFile.php?codigo=4DS4
NLM
Manoel D da S, Dipold J, Voss T, Vivas MG, Mendonça CR. Determination of two photon absorption coefficients (β) in GaN and GaN-Al films [Internet]. Program. 2018 ;[citado 2024 set. 07 ] Available from: https://new.eventweb.com.br/xviisbpmat/specific-files/grabFile.php?codigo=4DS4
Vancouver
Manoel D da S, Dipold J, Voss T, Vivas MG, Mendonça CR. Determination of two photon absorption coefficients (β) in GaN and GaN-Al films [Internet]. Program. 2018 ;[citado 2024 set. 07 ] Available from: https://new.eventweb.com.br/xviisbpmat/specific-files/grabFile.php?codigo=4DS4
Artigo de periodico
Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption (2018)
Martins, R. J.; Siqueira, J. P.; Clavero, I. Manglano; Margenfeld, C.; Fündling, S.; Vogt, A.; Waag, A.; Voss, T.; Mendonça, Cleber Renato
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: SEMICONDUTORES, MAGNETISMO, DISPOSITIVOS ELETRÔNICOS
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ABNT
MARTINS, R. J. et al. Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption. Journal of Applied Physics, v. 123, n. 24, p. 243101-1-243101-5, 2018Tradução . . Disponível em: https://doi.org/10.1063/1.5027395. Acesso em: 07 set. 2024.
APA
Martins, R. J., Siqueira, J. P., Clavero, I. M., Margenfeld, C., Fündling, S., Vogt, A., et al. (2018). Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption. Journal of Applied Physics, 123( 24), 243101-1-243101-5. doi:10.1063/1.5027395
NLM
Martins RJ, Siqueira JP, Clavero IM, Margenfeld C, Fündling S, Vogt A, Waag A, Voss T, Mendonça CR. Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption [Internet]. Journal of Applied Physics. 2018 ; 123( 24): 243101-1-243101-5.[citado 2024 set. 07 ] Available from: https://doi.org/10.1063/1.5027395
Vancouver
Martins RJ, Siqueira JP, Clavero IM, Margenfeld C, Fündling S, Vogt A, Waag A, Voss T, Mendonça CR. Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption [Internet]. Journal of Applied Physics. 2018 ; 123( 24): 243101-1-243101-5.[citado 2024 set. 07 ] Available from: https://doi.org/10.1063/1.5027395

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