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Filtros : " IFSC011" "Financiamento FAPERGS" Removidos: "FeSBE" "go" "2020" "IEB" Limpar

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  • Artigo de periodico

    Triggering synergy between p-type sputter-deposited FeMnOx or FeNiOx and w-doped BiVO4 for enhanced oxygen evolution (2024)

    Khan, Niqab; Koche, Ariadne; Centurion, Higor Andrade ; Rabelo, Lucas Gabriel ; Bettini, Jefferson ; Santos, Gabriel Trindade dos ; Souza, Flavio Leandro ; Gonçalves, Renato Vitalino ; Khan, Sherdil

    Source: ACS Applied Energy Materials. Unidade: IFSC

    Subjects: FOTOCATÁLISE, PROPRIEDADES DOS MATERIAIS

    PrivadoAcesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas

    • ABNT

      KHAN, Niqab et al. Triggering synergy between p-type sputter-deposited FeMnOx or FeNiOx and w-doped BiVO4 for enhanced oxygen evolution. ACS Applied Energy Materials, v. 7, n. 6, p. 2129 - 2141 + supporting information: s1 - s18, 2024Tradução . . Disponível em: https://doi.org/10.1021/acsaem.3c02739. Acesso em: 14 nov. 2024.

    • APA

      Khan, N., Koche, A., Centurion, H. A., Rabelo, L. G., Bettini, J., Santos, G. T. dos, et al. (2024). Triggering synergy between p-type sputter-deposited FeMnOx or FeNiOx and w-doped BiVO4 for enhanced oxygen evolution. ACS Applied Energy Materials, 7( 6), 2129 - 2141 + supporting information: s1 - s18. doi:10.1021/acsaem.3c02739

    • NLM

      Khan N, Koche A, Centurion HA, Rabelo LG, Bettini J, Santos GT dos, Souza FL, Gonçalves RV, Khan S. Triggering synergy between p-type sputter-deposited FeMnOx or FeNiOx and w-doped BiVO4 for enhanced oxygen evolution [Internet]. ACS Applied Energy Materials. 2024 ; 7( 6): 2129 - 2141 + supporting information: s1 - s18.[citado 2024 nov. 14 ] Available from: https://doi.org/10.1021/acsaem.3c02739

    • Vancouver

      Khan N, Koche A, Centurion HA, Rabelo LG, Bettini J, Santos GT dos, Souza FL, Gonçalves RV, Khan S. Triggering synergy between p-type sputter-deposited FeMnOx or FeNiOx and w-doped BiVO4 for enhanced oxygen evolution [Internet]. ACS Applied Energy Materials. 2024 ; 7( 6): 2129 - 2141 + supporting information: s1 - s18.[citado 2024 nov. 14 ] Available from: https://doi.org/10.1021/acsaem.3c02739

  • Artigo de periodico

    Ionic liquid based dopant-free band edge shift in BiVO4 particles for photocatalysis under simulated sunlight irradiation (2022)

    Khan, Niqab; Wolff, Rogério Nunes ; Ullah, Hameed; Chacón, Gustavo J. ; Santa Rosa, Washington ; Dupont, Jairton ; Gonçalves, Renato Vitalino ; Khan, Sherdil

    Source: Materials Advances. Unidade: IFSC

    Subjects: FOTOCATÁLISE, ELETROQUÍMICA, SEMICONDUTORES

    Versão PublicadaAcesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas

    • ABNT

      KHAN, Niqab et al. Ionic liquid based dopant-free band edge shift in BiVO4 particles for photocatalysis under simulated sunlight irradiation. Materials Advances, v. 3, n. 16, p. 6485-6495 + supplementary information, 2022Tradução . . Disponível em: https://doi.org/10.1039/d2ma00259k. Acesso em: 14 nov. 2024.

    • APA

      Khan, N., Wolff, R. N., Ullah, H., Chacón, G. J., Santa Rosa, W., Dupont, J., et al. (2022). Ionic liquid based dopant-free band edge shift in BiVO4 particles for photocatalysis under simulated sunlight irradiation. Materials Advances, 3( 16), 6485-6495 + supplementary information. doi:10.1039/d2ma00259k.

    • NLM

      Khan N, Wolff RN, Ullah H, Chacón GJ, Santa Rosa W, Dupont J, Gonçalves RV, Khan S. Ionic liquid based dopant-free band edge shift in BiVO4 particles for photocatalysis under simulated sunlight irradiation [Internet]. Materials Advances. 2022 ; 3( 16): 6485-6495 + supplementary information.[citado 2024 nov. 14 ] Available from: https://doi.org/10.1039/d2ma00259k.

    • Vancouver

      Khan N, Wolff RN, Ullah H, Chacón GJ, Santa Rosa W, Dupont J, Gonçalves RV, Khan S. Ionic liquid based dopant-free band edge shift in BiVO4 particles for photocatalysis under simulated sunlight irradiation [Internet]. Materials Advances. 2022 ; 3( 16): 6485-6495 + supplementary information.[citado 2024 nov. 14 ] Available from: https://doi.org/10.1039/d2ma00259k.
  • 1

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