Source: Computational Materials Science. Unidade: IQSC
Assunto: SEMICONDUTORES
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FREIRE, Rafael L. H et al. Sn3O4 exfoliation process investigated by density functional theory and modern scotch-tape experiment. Computational Materials Science, v. 170, p. 109160, 2019Tradução . . Disponível em: https://doi.org/10.1016/j.commatsci.2019.109160. Acesso em: 03 jan. 2026.APA
Freire, R. L. H., Masteghin, M. G., Silva, J. L. F. da, & Orlandi, M. O. (2019). Sn3O4 exfoliation process investigated by density functional theory and modern scotch-tape experiment. Computational Materials Science, 170, 109160. doi:10.1016/j.commatsci.2019.109160NLM
Freire RLH, Masteghin MG, Silva JLF da, Orlandi MO. Sn3O4 exfoliation process investigated by density functional theory and modern scotch-tape experiment [Internet]. Computational Materials Science. 2019 ; 170 109160.[citado 2026 jan. 03 ] Available from: https://doi.org/10.1016/j.commatsci.2019.109160Vancouver
Freire RLH, Masteghin MG, Silva JLF da, Orlandi MO. Sn3O4 exfoliation process investigated by density functional theory and modern scotch-tape experiment [Internet]. Computational Materials Science. 2019 ; 170 109160.[citado 2026 jan. 03 ] Available from: https://doi.org/10.1016/j.commatsci.2019.109160
