Deeper-band electron contributions to stopping power of silicon for low-energy ions (2024)
Source: Journal of Chemical Physics. Unidades: IPEN, IF
Subjects: FÍSICA NUCLEAR, RADIAÇÃO (ENERGIA RADIANTE)
ABNT
SILVA, Flávio Matias da et al. Deeper-band electron contributions to stopping power of silicon for low-energy ions. Journal of Chemical Physics, v. 161, n. 6, p. 064310, 2024Tradução . . Disponível em: https://dx.doi.org/10.1063/5.0218226. Acesso em: 03 jan. 2026.APA
Silva, F. M. da, Grande, P. L., Koval, N. E., Shorto, J. M. B., Silva, T. F. da, & Arista, N. R. (2024). Deeper-band electron contributions to stopping power of silicon for low-energy ions. Journal of Chemical Physics, 161( 6), 064310. doi:10.1063/5.0218226NLM
Silva FM da, Grande PL, Koval NE, Shorto JMB, Silva TF da, Arista NR. Deeper-band electron contributions to stopping power of silicon for low-energy ions [Internet]. Journal of Chemical Physics. 2024 ; 161( 6): 064310.[citado 2026 jan. 03 ] Available from: https://dx.doi.org/10.1063/5.0218226Vancouver
Silva FM da, Grande PL, Koval NE, Shorto JMB, Silva TF da, Arista NR. Deeper-band electron contributions to stopping power of silicon for low-energy ions [Internet]. Journal of Chemical Physics. 2024 ; 161( 6): 064310.[citado 2026 jan. 03 ] Available from: https://dx.doi.org/10.1063/5.0218226
