UBIC GaN:Si layers investigated by Raman scattering spectroscopy (2001)
Fonte: Resumos. Nome do evento: Encontro Nacional de Física da Matéria Condensada. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
ABNT
FERNANDEZ, José Rafael León et al. UBIC GaN:Si layers investigated by Raman scattering spectroscopy. 2001, Anais.. São Paulo: SBF, 2001. . Acesso em: 06 set. 2024.APA
Fernandez, J. R. L., Silva, M. T. O., Pusep, Y. A., Chitta, V. A., Tabata, A., Noriega, O. C., et al. (2001). UBIC GaN:Si layers investigated by Raman scattering spectroscopy. In Resumos. São Paulo: SBF.NLM
Fernandez JRL, Silva MTO, Pusep YA, Chitta VA, Tabata A, Noriega OC, Leite JR, Abramof E, As DJ, Schikora D, Lischka K. UBIC GaN:Si layers investigated by Raman scattering spectroscopy. Resumos. 2001 ;[citado 2024 set. 06 ]Vancouver
Fernandez JRL, Silva MTO, Pusep YA, Chitta VA, Tabata A, Noriega OC, Leite JR, Abramof E, As DJ, Schikora D, Lischka K. UBIC GaN:Si layers investigated by Raman scattering spectroscopy. Resumos. 2001 ;[citado 2024 set. 06 ]