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Filtros : "Beijing Computational Science Research Center, Beijing" "IQSC-SQF" Removido: "ERG" Limpar

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  • Artigo de periodico

    Enhancing topological Weyl Semimetals by Janus transition-metal dichalcogenides structures (2023)

    Griffith, M.A.R.; Rufo, S; Dias, Alexandre Cavalheiro ; Silva, Juarez Lopes Ferreira da

    Source: Computational Materials Science. Unidade: IQSC

    Assunto: TOPOLOGIA

    PrivadoAcesso à fonteDOIHow to cite
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    • ABNT

      GRIFFITH, M.A.R. et al. Enhancing topological Weyl Semimetals by Janus transition-metal dichalcogenides structures. Computational Materials Science, v. 218, p. 112004, 2023Tradução . . Disponível em: https://doi.org/10.1016/j.commatsci.2022.112004. Acesso em: 04 jun. 2024.

    • APA

      Griffith, M. A. R., Rufo, S., Dias, A. C., & Silva, J. L. F. da. (2023). Enhancing topological Weyl Semimetals by Janus transition-metal dichalcogenides structures. Computational Materials Science, 218, 112004. doi:10.1016/j.commatsci.2022.112004

    • NLM

      Griffith MAR, Rufo S, Dias AC, Silva JLF da. Enhancing topological Weyl Semimetals by Janus transition-metal dichalcogenides structures [Internet]. Computational Materials Science. 2023 ; 218 112004.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1016/j.commatsci.2022.112004

    • Vancouver

      Griffith MAR, Rufo S, Dias AC, Silva JLF da. Enhancing topological Weyl Semimetals by Janus transition-metal dichalcogenides structures [Internet]. Computational Materials Science. 2023 ; 218 112004.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1016/j.commatsci.2022.112004

  • Artigo de periodico

    Ab initio investigation of the role of charge transfer in the adsorption properties of H2, N2, O2, CO, NO, CO2, NO2, and CH4 on the van derWaals layered Sn3O4 semiconductor (2020)

    Freire, Rafael L. H. ; Marcelo O. Orlandi ; Silva, Juarez Lopes Ferreira da

    Source: Physical Review Materials. Unidade: IQSC

    Subjects: FÍSICO-QUÍMICA, SEMICONDUTORES

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    • ABNT

      FREIRE, Rafael L. H. e MARCELO O. ORLANDI, e SILVA, Juarez Lopes Ferreira da. Ab initio investigation of the role of charge transfer in the adsorption properties of H2, N2, O2, CO, NO, CO2, NO2, and CH4 on the van derWaals layered Sn3O4 semiconductor. Physical Review Materials, v. 4, n. 10, p. 104002, 2020Tradução . . Disponível em: https://doi.org/10.1103/PhysRevMaterials.4.104002. Acesso em: 04 jun. 2024.

    • APA

      Freire, R. L. H., Marcelo O. Orlandi,, & Silva, J. L. F. da. (2020). Ab initio investigation of the role of charge transfer in the adsorption properties of H2, N2, O2, CO, NO, CO2, NO2, and CH4 on the van derWaals layered Sn3O4 semiconductor. Physical Review Materials, 4( 10), 104002. doi:10.1103/PhysRevMaterials.4.104002

    • NLM

      Freire RLH, Marcelo O. Orlandi, Silva JLF da. Ab initio investigation of the role of charge transfer in the adsorption properties of H2, N2, O2, CO, NO, CO2, NO2, and CH4 on the van derWaals layered Sn3O4 semiconductor [Internet]. Physical Review Materials. 2020 ; 4( 10): 104002.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1103/PhysRevMaterials.4.104002

    • Vancouver

      Freire RLH, Marcelo O. Orlandi, Silva JLF da. Ab initio investigation of the role of charge transfer in the adsorption properties of H2, N2, O2, CO, NO, CO2, NO2, and CH4 on the van derWaals layered Sn3O4 semiconductor [Internet]. Physical Review Materials. 2020 ; 4( 10): 104002.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1103/PhysRevMaterials.4.104002
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