Molecular cluster model studies of the initial growth of cubic GaN over 3C-SiC(100) surfaces (1998)
Source: Resumos. Conference titles: Encontro Nacional de Física da Matéria Condensada. Unidade: IF
Assunto: MATÉRIA CONDENSADA
ABNT
ALVES, H W Leite e ALVES, J L A e LEITE, J. R. Molecular cluster model studies of the initial growth of cubic GaN over 3C-SiC(100) surfaces. 1998, Anais.. São Paulo: Sociedade Brasileira de Física, 1998. . Acesso em: 14 set. 2024.APA
Alves, H. W. L., Alves, J. L. A., & Leite, J. R. (1998). Molecular cluster model studies of the initial growth of cubic GaN over 3C-SiC(100) surfaces. In Resumos. São Paulo: Sociedade Brasileira de Física.NLM
Alves HWL, Alves JLA, Leite JR. Molecular cluster model studies of the initial growth of cubic GaN over 3C-SiC(100) surfaces. Resumos. 1998 ;[citado 2024 set. 14 ]Vancouver
Alves HWL, Alves JLA, Leite JR. Molecular cluster model studies of the initial growth of cubic GaN over 3C-SiC(100) surfaces. Resumos. 1998 ;[citado 2024 set. 14 ]