Devide model for POMA field-effect transistor (2002)
Fonte: Book of abstracts. Nome do evento: International Conference on Science and Technology of Synthetic Metals - ICSM 2002. Unidades: IFSC, EP
Assuntos: MATÉRIA CONDENSADA, POLÍMEROS (MATERIAIS)
ABNT
BIANCHI, Rodrigo Fernando e FARIA, Roberto Mendonça e ONMORI, Roberto Koji. Devide model for POMA field-effect transistor. 2002, Anais.. Shanghai: Fudan University, Research Center for Theoretical Physics, 2002. . Acesso em: 22 ago. 2024.APA
Bianchi, R. F., Faria, R. M., & Onmori, R. K. (2002). Devide model for POMA field-effect transistor. In Book of abstracts. Shanghai: Fudan University, Research Center for Theoretical Physics.NLM
Bianchi RF, Faria RM, Onmori RK. Devide model for POMA field-effect transistor. Book of abstracts. 2002 ;[citado 2024 ago. 22 ]Vancouver
Bianchi RF, Faria RM, Onmori RK. Devide model for POMA field-effect transistor. Book of abstracts. 2002 ;[citado 2024 ago. 22 ]