Filtros : " IFSC011" "ELETROQUÍMICA" Removidos: "1976" "Financiamento NextGenerationEU" Limpar

Filtros



Refine with date range


  • Source: ACS Applied Materials and Interfaces. Unidades: IFSC, EESC

    Subjects: FOTOCATÁLISE, ELETROQUÍMICA, FILMES FINOS

    PrivadoAcesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      ROSA, Washington Santa et al. Ternary oxide CuWO4/BiVO4/FeCoOx Films for photoelectrochemical water oxidation: insights into the electronic structure and interfacial band alignment. ACS Applied Materials and Interfaces, v. 14, n. 20, p. 22858-22869 + supporting information: S1-S22, 2022Tradução . . Disponível em: https://doi.org/10.1021/acsami.1c21001. Acesso em: 19 jun. 2024.
    • APA

      Rosa, W. S., Rabelo, L. G., Zampaulo, L. G. T., & Gonçalves, R. V. (2022). Ternary oxide CuWO4/BiVO4/FeCoOx Films for photoelectrochemical water oxidation: insights into the electronic structure and interfacial band alignment. ACS Applied Materials and Interfaces, 14( 20), 22858-22869 + supporting information: S1-S22. doi:10.1021/acsami.1c21001
    • NLM

      Rosa WS, Rabelo LG, Zampaulo LGT, Gonçalves RV. Ternary oxide CuWO4/BiVO4/FeCoOx Films for photoelectrochemical water oxidation: insights into the electronic structure and interfacial band alignment [Internet]. ACS Applied Materials and Interfaces. 2022 ; 14( 20): 22858-22869 + supporting information: S1-S22.[citado 2024 jun. 19 ] Available from: https://doi.org/10.1021/acsami.1c21001
    • Vancouver

      Rosa WS, Rabelo LG, Zampaulo LGT, Gonçalves RV. Ternary oxide CuWO4/BiVO4/FeCoOx Films for photoelectrochemical water oxidation: insights into the electronic structure and interfacial band alignment [Internet]. ACS Applied Materials and Interfaces. 2022 ; 14( 20): 22858-22869 + supporting information: S1-S22.[citado 2024 jun. 19 ] Available from: https://doi.org/10.1021/acsami.1c21001
  • Source: Program. Conference titles: Materials Research Society Fall Meeting and Exhibit. Unidade: IFSC

    Subjects: ENERGIA, ELETROQUÍMICA

    PrivadoHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      GONÇALVES, Renato Vitalino et al. Interfacial band alignment and photoelectrochemical properties of all- sputtered BiVO4/FeMOx (M = Co, Ni, Mn) p-n heterojunctions. 2022, Anais.. Warrendale: Materials Research Society - MRS, 2022. Disponível em: https://repositorio.usp.br/directbitstream/4e52d8a5-54f0-4f90-a061-4bdfbe76a584/3112613.pdf. Acesso em: 19 jun. 2024.
    • APA

      Gonçalves, R. V., Correa, A., Rabelo, L. G., Rosa, W. S., Khan, N., & Khan, S. (2022). Interfacial band alignment and photoelectrochemical properties of all- sputtered BiVO4/FeMOx (M = Co, Ni, Mn) p-n heterojunctions. In Program. Warrendale: Materials Research Society - MRS. Recuperado de https://repositorio.usp.br/directbitstream/4e52d8a5-54f0-4f90-a061-4bdfbe76a584/3112613.pdf
    • NLM

      Gonçalves RV, Correa A, Rabelo LG, Rosa WS, Khan N, Khan S. Interfacial band alignment and photoelectrochemical properties of all- sputtered BiVO4/FeMOx (M = Co, Ni, Mn) p-n heterojunctions [Internet]. Program. 2022 ;[citado 2024 jun. 19 ] Available from: https://repositorio.usp.br/directbitstream/4e52d8a5-54f0-4f90-a061-4bdfbe76a584/3112613.pdf
    • Vancouver

      Gonçalves RV, Correa A, Rabelo LG, Rosa WS, Khan N, Khan S. Interfacial band alignment and photoelectrochemical properties of all- sputtered BiVO4/FeMOx (M = Co, Ni, Mn) p-n heterojunctions [Internet]. Program. 2022 ;[citado 2024 jun. 19 ] Available from: https://repositorio.usp.br/directbitstream/4e52d8a5-54f0-4f90-a061-4bdfbe76a584/3112613.pdf
  • Source: Materials Advances. Unidade: IFSC

    Subjects: FOTOCATÁLISE, ELETROQUÍMICA, SEMICONDUTORES

    Versão PublicadaAcesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      KHAN, Niqab et al. Ionic liquid based dopant-free band edge shift in BiVO4 particles for photocatalysis under simulated sunlight irradiation. Materials Advances, v. 3, n. 16, p. 6485-6495 + supplementary information, 2022Tradução . . Disponível em: https://doi.org/10.1039/d2ma00259k. Acesso em: 19 jun. 2024.
    • APA

      Khan, N., Wolff, R. N., Ullah, H., Chacón, G. J., Santa Rosa, W., Dupont, J., et al. (2022). Ionic liquid based dopant-free band edge shift in BiVO4 particles for photocatalysis under simulated sunlight irradiation. Materials Advances, 3( 16), 6485-6495 + supplementary information. doi:10.1039/d2ma00259k.
    • NLM

      Khan N, Wolff RN, Ullah H, Chacón GJ, Santa Rosa W, Dupont J, Gonçalves RV, Khan S. Ionic liquid based dopant-free band edge shift in BiVO4 particles for photocatalysis under simulated sunlight irradiation [Internet]. Materials Advances. 2022 ; 3( 16): 6485-6495 + supplementary information.[citado 2024 jun. 19 ] Available from: https://doi.org/10.1039/d2ma00259k.
    • Vancouver

      Khan N, Wolff RN, Ullah H, Chacón GJ, Santa Rosa W, Dupont J, Gonçalves RV, Khan S. Ionic liquid based dopant-free band edge shift in BiVO4 particles for photocatalysis under simulated sunlight irradiation [Internet]. Materials Advances. 2022 ; 3( 16): 6485-6495 + supplementary information.[citado 2024 jun. 19 ] Available from: https://doi.org/10.1039/d2ma00259k.

Digital Library of Intellectual Production of Universidade de São Paulo     2012 - 2024