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Filtros : "IF-FMT" "Singapura" "1997" Removidos: " IQ011" "Solid State Communications" Limpar

Filtros

Artigo de periodico
Electron subband levels of n-Type'Gama'-Doped quantum wells under in-plane magnetic fields (1997)
Takahashi, E K; Lino, A T; Scólfaro, Luisa Maria Ribeiro
Source: International Journal of Modern Physics B. Unidade: IF
Assunto: FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
TAKAHASHI, E K e LINO, A T e SCÓLFARO, Luisa Maria Ribeiro. Electron subband levels of n-Type'Gama'-Doped quantum wells under in-plane magnetic fields. International Journal of Modern Physics B, v. 11, n. 9, p. 1195-1207, 1997Tradução . . Acesso em: 30 set. 2024.
APA
Takahashi, E. K., Lino, A. T., & Scólfaro, L. M. R. (1997). Electron subband levels of n-Type'Gama'-Doped quantum wells under in-plane magnetic fields. International Journal of Modern Physics B, 11( 9), 1195-1207.
NLM
Takahashi EK, Lino AT, Scólfaro LMR. Electron subband levels of n-Type'Gama'-Doped quantum wells under in-plane magnetic fields. International Journal of Modern Physics B. 1997 ; 11( 9): 1195-1207.[citado 2024 set. 30 ]
Vancouver
Takahashi EK, Lino AT, Scólfaro LMR. Electron subband levels of n-Type'Gama'-Doped quantum wells under in-plane magnetic fields. International Journal of Modern Physics B. 1997 ; 11( 9): 1195-1207.[citado 2024 set. 30 ]
Parte de monografia/livro
Photoluminescence of periodically 'Delta-Doped' InP in high magnetic fields (1997)
Henriques, André Bohomoletz; Gonçalves, L. C. D.; Bindilatti, V.; Oliveira Júnior, Honorato Faustino de; Souza, P. L.; Yavich, B
Source: International Conference High Magnetic Fields in the Physics of Semiconductors II, 12. Würzburg, 1996. Unidade: IF
Assunto: SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
HENRIQUES, André Bohomoletz et al. Photoluminescence of periodically 'Delta-Doped' InP in high magnetic fields. International Conference High Magnetic Fields in the Physics of Semiconductors II, 12. Würzburg, 1996. Tradução . Singapore: World Scientific, 1997. . . Acesso em: 30 set. 2024.
APA
Henriques, A. B., Gonçalves, L. C. D., Bindilatti, V., Oliveira Júnior, H. F. de, Souza, P. L., & Yavich, B. (1997). Photoluminescence of periodically 'Delta-Doped' InP in high magnetic fields. In International Conference High Magnetic Fields in the Physics of Semiconductors II, 12. Würzburg, 1996. Singapore: World Scientific.
NLM
Henriques AB, Gonçalves LCD, Bindilatti V, Oliveira Júnior HF de, Souza PL, Yavich B. Photoluminescence of periodically 'Delta-Doped' InP in high magnetic fields. In: International Conference High Magnetic Fields in the Physics of Semiconductors II, 12. Würzburg, 1996. Singapore: World Scientific; 1997. [citado 2024 set. 30 ]
Vancouver
Henriques AB, Gonçalves LCD, Bindilatti V, Oliveira Júnior HF de, Souza PL, Yavich B. Photoluminescence of periodically 'Delta-Doped' InP in high magnetic fields. In: International Conference High Magnetic Fields in the Physics of Semiconductors II, 12. Würzburg, 1996. Singapore: World Scientific; 1997. [citado 2024 set. 30 ]

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