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  • Relatorio tecnico

    Measurement of miniband parameters of a doped superlattice by photoluminescence in high magnetic fields (2020)

    Oliveira, R F; Henriques, André Bohomoletz ; Lamas, Tomás Erikson; Quivy, Alain André ; Abramof, E

    Unidade: IF

    Subjects: MATÉRIA CONDENSADA, CAMPO MAGNÉTICO, FOTOLUMINESCÊNCIA

    Acesso à fonteHow to cite
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    • ABNT

      OLIVEIRA, R F et al. Measurement of miniband parameters of a doped superlattice by photoluminescence in high magnetic fields. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: https://arxiv.org/pdf/cond-mat/0404254.pdf. Acesso em: 16 nov. 2024. , 2020

    • APA

      Oliveira, R. F., Henriques, A. B., Lamas, T. E., Quivy, A. A., & Abramof, E. (2020). Measurement of miniband parameters of a doped superlattice by photoluminescence in high magnetic fields. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de https://arxiv.org/pdf/cond-mat/0404254.pdf

    • NLM

      Oliveira RF, Henriques AB, Lamas TE, Quivy AA, Abramof E. Measurement of miniband parameters of a doped superlattice by photoluminescence in high magnetic fields [Internet]. 2020 ;[citado 2024 nov. 16 ] Available from: https://arxiv.org/pdf/cond-mat/0404254.pdf

    • Vancouver

      Oliveira RF, Henriques AB, Lamas TE, Quivy AA, Abramof E. Measurement of miniband parameters of a doped superlattice by photoluminescence in high magnetic fields [Internet]. 2020 ;[citado 2024 nov. 16 ] Available from: https://arxiv.org/pdf/cond-mat/0404254.pdf

  • Trabalho de evento-anais periodico

    Influence of quantum-dots density on average in-plane strain of optoelectronic devices investigated by high-resolution X-ray diffraction (2009)

    Freitas, Raul de Oliveira; Diaz, Beatriz; Abramof, Eduardo; Quivy, A. A.; Morelhão, Sérgio Luiz

    Source: Physica Status Solidi A - Applications and Materials Science. Conference titles: Biennial Conference on High Resolution X-Ray Diffraction and Imaging. Unidade: IF

    Subjects: POÇOS QUÂNTICOS, DIFRAÇÃO POR RAIOS X

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    • ABNT

      FREITAS, Raul de Oliveira et al. Influence of quantum-dots density on average in-plane strain of optoelectronic devices investigated by high-resolution X-ray diffraction. Physica Status Solidi A - Applications and Materials Science. Weinheim: Wiley-VCH Verlag. Disponível em: http://www3.interscience.wiley.com/cgi-bin/fulltext/122462600/PDFSTART. Acesso em: 16 nov. 2024. , 2009

    • APA

      Freitas, R. de O., Diaz, B., Abramof, E., Quivy, A. A., & Morelhão, S. L. (2009). Influence of quantum-dots density on average in-plane strain of optoelectronic devices investigated by high-resolution X-ray diffraction. Physica Status Solidi A - Applications and Materials Science. Weinheim: Wiley-VCH Verlag. Recuperado de http://www3.interscience.wiley.com/cgi-bin/fulltext/122462600/PDFSTART

    • NLM

      Freitas R de O, Diaz B, Abramof E, Quivy AA, Morelhão SL. Influence of quantum-dots density on average in-plane strain of optoelectronic devices investigated by high-resolution X-ray diffraction [Internet]. Physica Status Solidi A - Applications and Materials Science. 2009 ; 206( 8):[citado 2024 nov. 16 ] Available from: http://www3.interscience.wiley.com/cgi-bin/fulltext/122462600/PDFSTART

    • Vancouver

      Freitas R de O, Diaz B, Abramof E, Quivy AA, Morelhão SL. Influence of quantum-dots density on average in-plane strain of optoelectronic devices investigated by high-resolution X-ray diffraction [Internet]. Physica Status Solidi A - Applications and Materials Science. 2009 ; 206( 8):[citado 2024 nov. 16 ] Available from: http://www3.interscience.wiley.com/cgi-bin/fulltext/122462600/PDFSTART
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