Freire, Rafael L. H. 
; Marcelo O. Orlandi ; Silva, Juarez Lopes Ferreira da
Source: Physical Review Materials. Unidade: IQSC
Subjects: FÍSICO-QUÍMICA, SEMICONDUTORES
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ABNT
FREIRE, Rafael L. H. e MARCELO O. ORLANDI, e SILVA, Juarez Lopes Ferreira da. Ab initio investigation of the role of charge transfer in the adsorption properties of H2, N2, O2, CO, NO, CO2, NO2, and CH4 on the van derWaals layered Sn3O4 semiconductor. Physical Review Materials, v. 4, n. 10, p. 104002, 2020Tradução . . Disponível em: https://doi.org/10.1103/PhysRevMaterials.4.104002. Acesso em: 02 nov. 2024.APA
Freire, R. L. H., Marcelo O. Orlandi,, & Silva, J. L. F. da. (2020). Ab initio investigation of the role of charge transfer in the adsorption properties of H2, N2, O2, CO, NO, CO2, NO2, and CH4 on the van derWaals layered Sn3O4 semiconductor. Physical Review Materials, 4( 10), 104002. doi:10.1103/PhysRevMaterials.4.104002NLM
Freire RLH, Marcelo O. Orlandi, Silva JLF da. Ab initio investigation of the role of charge transfer in the adsorption properties of H2, N2, O2, CO, NO, CO2, NO2, and CH4 on the van derWaals layered Sn3O4 semiconductor [Internet]. Physical Review Materials. 2020 ; 4( 10): 104002.[citado 2024 nov. 02 ] Available from: https://doi.org/10.1103/PhysRevMaterials.4.104002Vancouver
Freire RLH, Marcelo O. Orlandi, Silva JLF da. Ab initio investigation of the role of charge transfer in the adsorption properties of H2, N2, O2, CO, NO, CO2, NO2, and CH4 on the van derWaals layered Sn3O4 semiconductor [Internet]. Physical Review Materials. 2020 ; 4( 10): 104002.[citado 2024 nov. 02 ] Available from: https://doi.org/10.1103/PhysRevMaterials.4.104002
