Source: Physica Status Solidi C. Unidade: IFSC
Subjects: FILMES FINOS, FOTOLUMINESCÊNCIA
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GUERRA, J. Andres et al. Concentration quenching and thermal activation of the luminescence from terbium-doped a-SiC:H and c-AlN thin films. Physica Status Solidi C, v. 10, n. Ja 2013, p. 68-71, 2013Tradução . . Disponível em: https://doi.org/10.1002/pssc.201200394. Acesso em: 22 jun. 2024.APA
Guerra, J. A., Benz, F., Zanatta, A. R., Strunk, H. P., Winnacker, A., & Weingärtner, R. (2013). Concentration quenching and thermal activation of the luminescence from terbium-doped a-SiC:H and c-AlN thin films. Physica Status Solidi C, 10( Ja 2013), 68-71. doi:10.1002/pssc.201200394NLM
Guerra JA, Benz F, Zanatta AR, Strunk HP, Winnacker A, Weingärtner R. Concentration quenching and thermal activation of the luminescence from terbium-doped a-SiC:H and c-AlN thin films [Internet]. Physica Status Solidi C. 2013 ; 10( Ja 2013): 68-71.[citado 2024 jun. 22 ] Available from: https://doi.org/10.1002/pssc.201200394Vancouver
Guerra JA, Benz F, Zanatta AR, Strunk HP, Winnacker A, Weingärtner R. Concentration quenching and thermal activation of the luminescence from terbium-doped a-SiC:H and c-AlN thin films [Internet]. Physica Status Solidi C. 2013 ; 10( Ja 2013): 68-71.[citado 2024 jun. 22 ] Available from: https://doi.org/10.1002/pssc.201200394
