ReP USP - Resultado da busca

Trabalho de evento
Extraction of the silicon film trickness on fully depleted SOI nMOSFETs using the back gate voltage influence (2000)
Nicolett, Aparecido Sirley; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Source: SBMicro 2000 : proceedings. Conference titles: International Conference on Microelectronics and Packaging. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
NICOLETT, Aparecido Sirley et al. Extraction of the silicon film trickness on fully depleted SOI nMOSFETs using the back gate voltage influence. 2000, Anais.. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP, 2000. . Acesso em: 30 ago. 2024.
APA
Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (2000). Extraction of the silicon film trickness on fully depleted SOI nMOSFETs using the back gate voltage influence. In SBMicro 2000 : proceedings. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP.
NLM
Nicolett AS, Martino JA, Simoen E, Claeys C. Extraction of the silicon film trickness on fully depleted SOI nMOSFETs using the back gate voltage influence. SBMicro 2000 : proceedings. 2000 ;[citado 2024 ago. 30 ]
Vancouver
Nicolett AS, Martino JA, Simoen E, Claeys C. Extraction of the silicon film trickness on fully depleted SOI nMOSFETs using the back gate voltage influence. SBMicro 2000 : proceedings. 2000 ;[citado 2024 ago. 30 ]
Trabalho de evento
Comparison of analog performance in conventional and graded-channel fully-depleted SOI MOSFETs (2000)
Pavanello, Marcelo Antonio ; Martino, João Antonio ; Flandre, Denis
Source: SBMicro 2000: proceedings. Conference titles: International Conference on Microelectronics and Packaging. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PAVANELLO, Marcelo Antonio e MARTINO, João Antonio e FLANDRE, Denis. Comparison of analog performance in conventional and graded-channel fully-depleted SOI MOSFETs. 2000, Anais.. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP, 2000. . Acesso em: 30 ago. 2024.
APA
Pavanello, M. A., Martino, J. A., & Flandre, D. (2000). Comparison of analog performance in conventional and graded-channel fully-depleted SOI MOSFETs. In SBMicro 2000: proceedings. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP.
NLM
Pavanello MA, Martino JA, Flandre D. Comparison of analog performance in conventional and graded-channel fully-depleted SOI MOSFETs. SBMicro 2000: proceedings. 2000 ;[citado 2024 ago. 30 ]
Vancouver
Pavanello MA, Martino JA, Flandre D. Comparison of analog performance in conventional and graded-channel fully-depleted SOI MOSFETs. SBMicro 2000: proceedings. 2000 ;[citado 2024 ago. 30 ]
Trabalho de evento
Diodes model for the leakage drain current in enhancement-mode SOI nMOSFETs at 300 GRAUS C (2000)
Bellodi, Marcello; Iniguez, Benjamin; Flandre, Denis ; Martino, João Antonio
Source: SBMicro 2000 : proceedings. Conference titles: International Conference on Microelectronics and Packaging. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BELLODI, Marcello et al. Diodes model for the leakage drain current in enhancement-mode SOI nMOSFETs at 300 GRAUS C. 2000, Anais.. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP, 2000. . Acesso em: 30 ago. 2024.
APA
Bellodi, M., Iniguez, B., Flandre, D., & Martino, J. A. (2000). Diodes model for the leakage drain current in enhancement-mode SOI nMOSFETs at 300 GRAUS C. In SBMicro 2000 : proceedings. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP.
NLM
Bellodi M, Iniguez B, Flandre D, Martino JA. Diodes model for the leakage drain current in enhancement-mode SOI nMOSFETs at 300 GRAUS C. SBMicro 2000 : proceedings. 2000 ;[citado 2024 ago. 30 ]
Vancouver
Bellodi M, Iniguez B, Flandre D, Martino JA. Diodes model for the leakage drain current in enhancement-mode SOI nMOSFETs at 300 GRAUS C. SBMicro 2000 : proceedings. 2000 ;[citado 2024 ago. 30 ]
Artigo de periodico
Analog performance and application of graded-channel fully depleted SOI MOSFETs (2000)
Pavanello, Marcelo Antonio ; Martino, João Antonio ; Dessard, Vincent; Flandre, Denis
Source: Solid-State Electronics. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PAVANELLO, Marcelo Antonio et al. Analog performance and application of graded-channel fully depleted SOI MOSFETs. Solid-State Electronics, v. 44, n. 7, p. 1219-1222, 2000Tradução . . Disponível em: https://doi.org/10.1016/s0038-1101(00)00034-4. Acesso em: 30 ago. 2024.
APA
Pavanello, M. A., Martino, J. A., Dessard, V., & Flandre, D. (2000). Analog performance and application of graded-channel fully depleted SOI MOSFETs. Solid-State Electronics, 44( 7), 1219-1222. doi:10.1016/s0038-1101(00)00034-4
NLM
Pavanello MA, Martino JA, Dessard V, Flandre D. Analog performance and application of graded-channel fully depleted SOI MOSFETs [Internet]. Solid-State Electronics. 2000 ; 44( 7): 1219-1222.[citado 2024 ago. 30 ] Available from: https://doi.org/10.1016/s0038-1101(00)00034-4
Vancouver
Pavanello MA, Martino JA, Dessard V, Flandre D. Analog performance and application of graded-channel fully depleted SOI MOSFETs [Internet]. Solid-State Electronics. 2000 ; 44( 7): 1219-1222.[citado 2024 ago. 30 ] Available from: https://doi.org/10.1016/s0038-1101(00)00034-4
Trabalho de evento
Study of the deep-submicron SOI MOSFET leakage current behavior at high temperatures (2000)
Bellodi, Marcello; Iniguez, Benjamin; Raynaud, Cristine; Flandre, Denis ; Martino, João Antonio
Source: SBMicro 2000: proceedings. Conference titles: International Conference on Microelectronics and Packaging. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BELLODI, Marcello et al. Study of the deep-submicron SOI MOSFET leakage current behavior at high temperatures. 2000, Anais.. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP, 2000. . Acesso em: 30 ago. 2024.
APA
Bellodi, M., Iniguez, B., Raynaud, C., Flandre, D., & Martino, J. A. (2000). Study of the deep-submicron SOI MOSFET leakage current behavior at high temperatures. In SBMicro 2000: proceedings. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP.
NLM
Bellodi M, Iniguez B, Raynaud C, Flandre D, Martino JA. Study of the deep-submicron SOI MOSFET leakage current behavior at high temperatures. SBMicro 2000: proceedings. 2000 ;[citado 2024 ago. 30 ]
Vancouver
Bellodi M, Iniguez B, Raynaud C, Flandre D, Martino JA. Study of the deep-submicron SOI MOSFET leakage current behavior at high temperatures. SBMicro 2000: proceedings. 2000 ;[citado 2024 ago. 30 ]
Trabalho de evento
Parasitic bipolar effects in graded-channel fully-depleted silicon-on-insulator nMOSFET (2000)
Pavanello, Marcelo Antonio ; Martino, João Antonio ; Flandre, Denis
Source: SBMicro 2000: proceedings. Conference titles: International Conference on Microelectronics and Packaging. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PAVANELLO, Marcelo Antonio e MARTINO, João Antonio e FLANDRE, Denis. Parasitic bipolar effects in graded-channel fully-depleted silicon-on-insulator nMOSFET. 2000, Anais.. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP, 2000. . Acesso em: 30 ago. 2024.
APA
Pavanello, M. A., Martino, J. A., & Flandre, D. (2000). Parasitic bipolar effects in graded-channel fully-depleted silicon-on-insulator nMOSFET. In SBMicro 2000: proceedings. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP.
NLM
Pavanello MA, Martino JA, Flandre D. Parasitic bipolar effects in graded-channel fully-depleted silicon-on-insulator nMOSFET. SBMicro 2000: proceedings. 2000 ;[citado 2024 ago. 30 ]
Vancouver
Pavanello MA, Martino JA, Flandre D. Parasitic bipolar effects in graded-channel fully-depleted silicon-on-insulator nMOSFET. SBMicro 2000: proceedings. 2000 ;[citado 2024 ago. 30 ]
Trabalho de evento
Comparison of floating-body effects in conventional and graded-channel fully-depleted silicon-on-insulator nMOSFETs (2000)
Pavanello, Marcelo Antonio ; Martino, João Antonio ; Flandre, Denis
Source: Proceedings. Conference titles: IEEE International Conference on Devices, Circuits and Syems. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PAVANELLO, Marcelo Antonio e MARTINO, João Antonio e FLANDRE, Denis. Comparison of floating-body effects in conventional and graded-channel fully-depleted silicon-on-insulator nMOSFETs. 2000, Anais.. Piscataway: IEEE, 2000. . Acesso em: 30 ago. 2024.
APA
Pavanello, M. A., Martino, J. A., & Flandre, D. (2000). Comparison of floating-body effects in conventional and graded-channel fully-depleted silicon-on-insulator nMOSFETs. In Proceedings. Piscataway: IEEE.
NLM
Pavanello MA, Martino JA, Flandre D. Comparison of floating-body effects in conventional and graded-channel fully-depleted silicon-on-insulator nMOSFETs. Proceedings. 2000 ;[citado 2024 ago. 30 ]
Vancouver
Pavanello MA, Martino JA, Flandre D. Comparison of floating-body effects in conventional and graded-channel fully-depleted silicon-on-insulator nMOSFETs. Proceedings. 2000 ;[citado 2024 ago. 30 ]
Artigo de periodico
Isomorphisms of integral group rings of infinite groups (2000)
Jespers, Eric ; Juriaans, Orlando Stanley
Source: Journal of Algebra. Unidade: IME
Subjects: ANÉIS E ÁLGEBRAS ASSOCIATIVOS, ANÉIS DE GRUPOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
JESPERS, Eric e JURIAANS, Orlando Stanley. Isomorphisms of integral group rings of infinite groups. Journal of Algebra, v. 223, n. 1, p. 171-189, 2000Tradução . . Disponível em: https://doi.org/10.1006/jabr.1999.7989. Acesso em: 30 ago. 2024.
APA
Jespers, E., & Juriaans, O. S. (2000). Isomorphisms of integral group rings of infinite groups. Journal of Algebra, 223( 1), 171-189. doi:10.1006/jabr.1999.7989
NLM
Jespers E, Juriaans OS. Isomorphisms of integral group rings of infinite groups [Internet]. Journal of Algebra. 2000 ; 223( 1): 171-189.[citado 2024 ago. 30 ] Available from: https://doi.org/10.1006/jabr.1999.7989
Vancouver
Jespers E, Juriaans OS. Isomorphisms of integral group rings of infinite groups [Internet]. Journal of Algebra. 2000 ; 223( 1): 171-189.[citado 2024 ago. 30 ] Available from: https://doi.org/10.1006/jabr.1999.7989
Artigo de periodico
Large scale mercury and trace element measurements in the Amazon basin (2000)
Artaxo Netto, Paulo Eduardo ; Campos, Reinaldo Calixto de; Fernandes, Eduarto T; Martins, José V.; Xiao, Zifan; Lindqvist, Oliver; Fernandez-Jimenez, Maria T; Maenhaut, Willy
Source: Atmospheric Environment. Unidade: IF
Assunto: POLUIÇÃO AMBIENTAL
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ARTAXO NETTO, Paulo Eduardo et al. Large scale mercury and trace element measurements in the Amazon basin. Atmospheric Environment, v. 34, n. 24, p. 4085-4096, 2000Tradução . . Disponível em: https://doi.org/10.1016/s1352-2310(00)00106-0. Acesso em: 30 ago. 2024.
APA
Artaxo Netto, P. E., Campos, R. C. de, Fernandes, E. T., Martins, J. V., Xiao, Z., Lindqvist, O., et al. (2000). Large scale mercury and trace element measurements in the Amazon basin. Atmospheric Environment, 34( 24), 4085-4096. doi:10.1016/s1352-2310(00)00106-0
NLM
Artaxo Netto PE, Campos RC de, Fernandes ET, Martins JV, Xiao Z, Lindqvist O, Fernandez-Jimenez MT, Maenhaut W. Large scale mercury and trace element measurements in the Amazon basin [Internet]. Atmospheric Environment. 2000 ; 34( 24): 4085-4096.[citado 2024 ago. 30 ] Available from: https://doi.org/10.1016/s1352-2310(00)00106-0
Vancouver
Artaxo Netto PE, Campos RC de, Fernandes ET, Martins JV, Xiao Z, Lindqvist O, Fernandez-Jimenez MT, Maenhaut W. Large scale mercury and trace element measurements in the Amazon basin [Internet]. Atmospheric Environment. 2000 ; 34( 24): 4085-4096.[citado 2024 ago. 30 ] Available from: https://doi.org/10.1016/s1352-2310(00)00106-0
Artigo de periodico
On the hydrodynamic equilibrium of a rod in a lattice fluid (2000)
Ferrari, Pablo Augusto ; Maes, Christian; Rifo, Laura Leticia Ramos; Redig, Frank
Source: Journal of Physics A: Mathematical and General. Unidade: IME
Assunto: MECÂNICA ESTATÍSTICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
FERRARI, Pablo Augusto et al. On the hydrodynamic equilibrium of a rod in a lattice fluid. Journal of Physics A: Mathematical and General, v. 33, n. 26, p. 4725-4740, 2000Tradução . . Disponível em: https://doi.org/10.1088/0305-4470/33/26/301. Acesso em: 30 ago. 2024.
APA
Ferrari, P. A., Maes, C., Rifo, L. L. R., & Redig, F. (2000). On the hydrodynamic equilibrium of a rod in a lattice fluid. Journal of Physics A: Mathematical and General, 33( 26), 4725-4740. doi:10.1088/0305-4470/33/26/301
NLM
Ferrari PA, Maes C, Rifo LLR, Redig F. On the hydrodynamic equilibrium of a rod in a lattice fluid [Internet]. Journal of Physics A: Mathematical and General. 2000 ; 33( 26): 4725-4740.[citado 2024 ago. 30 ] Available from: https://doi.org/10.1088/0305-4470/33/26/301
Vancouver
Ferrari PA, Maes C, Rifo LLR, Redig F. On the hydrodynamic equilibrium of a rod in a lattice fluid [Internet]. Journal of Physics A: Mathematical and General. 2000 ; 33( 26): 4725-4740.[citado 2024 ago. 30 ] Available from: https://doi.org/10.1088/0305-4470/33/26/301
Artigo de periodico
Carbonaceous aerosol characterization in the Amazon basin, Brazil: novel dicarboxylic acids and related compounds (2000)
Kubátová, Alena; Vermeylen, Reinhilde; Claets, Magda; Cafmeyer, Jan; Maenhaut, Willy; Roberts, Greg; Artaxo Netto, Paulo Eduardo
Source: Atmospheric Environment. Unidade: IF
Assunto: FÍSICA ATMOSFÉRICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
KUBÁTOVÁ, Alena et al. Carbonaceous aerosol characterization in the Amazon basin, Brazil: novel dicarboxylic acids and related compounds. Atmospheric Environment, v. 34, p. 5037-5051, 2000Tradução . . Disponível em: https://doi.org/10.1016/S1352-2310(00)00320-4. Acesso em: 30 ago. 2024.
APA
Kubátová, A., Vermeylen, R., Claets, M., Cafmeyer, J., Maenhaut, W., Roberts, G., & Artaxo Netto, P. E. (2000). Carbonaceous aerosol characterization in the Amazon basin, Brazil: novel dicarboxylic acids and related compounds. Atmospheric Environment, 34, 5037-5051. doi:10.1016/S1352-2310(00)00320-4
NLM
Kubátová A, Vermeylen R, Claets M, Cafmeyer J, Maenhaut W, Roberts G, Artaxo Netto PE. Carbonaceous aerosol characterization in the Amazon basin, Brazil: novel dicarboxylic acids and related compounds [Internet]. Atmospheric Environment. 2000 ;34 5037-5051.[citado 2024 ago. 30 ] Available from: https://doi.org/10.1016/S1352-2310(00)00320-4
Vancouver
Kubátová A, Vermeylen R, Claets M, Cafmeyer J, Maenhaut W, Roberts G, Artaxo Netto PE. Carbonaceous aerosol characterization in the Amazon basin, Brazil: novel dicarboxylic acids and related compounds [Internet]. Atmospheric Environment. 2000 ;34 5037-5051.[citado 2024 ago. 30 ] Available from: https://doi.org/10.1016/S1352-2310(00)00320-4

USP Schools

ReP

Filtros

Authors

USP affiliated authors

Subjects

Source title

Indexado em

Non normalized affiliation