Ab initio calculation of the (100) and (110) surface phonon dispersion of GaAs and GaN (2003)
Source: Book of Abstracts. Conference titles: International Conference on Defects in Semiconductors. Unidade: IF
Assunto: SEMICONDUTORES
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ABNT
ALVES, H W Leite et al. Ab initio calculation of the (100) and (110) surface phonon dispersion of GaAs and GaN. 2003, Anais.. Amsterdam: Elsevier Science, 2003. . Acesso em: 12 nov. 2024.APA
Alves, H. W. L., Alves, J. L. A., Santos, A. M., Scolfaro, L. M. R., & Leite, J. R. (2003). Ab initio calculation of the (100) and (110) surface phonon dispersion of GaAs and GaN. In Book of Abstracts. Amsterdam: Elsevier Science.NLM
Alves HWL, Alves JLA, Santos AM, Scolfaro LMR, Leite JR. Ab initio calculation of the (100) and (110) surface phonon dispersion of GaAs and GaN. Book of Abstracts. 2003 ;[citado 2024 nov. 12 ]Vancouver
Alves HWL, Alves JLA, Santos AM, Scolfaro LMR, Leite JR. Ab initio calculation of the (100) and (110) surface phonon dispersion of GaAs and GaN. Book of Abstracts. 2003 ;[citado 2024 nov. 12 ]
